CREE CXXX-MB290-E400 Datasheet

The Leader in Silicon Carbide Solid State Technology

CPR3AQ Rev. C

G•SiC® Technology

Ultraviolet LEDs

CXXX-MB290-E400

Features Applications

• High Performance
– 12.0mW (395nm) UV
– 12.0mW (405nm) UV

• Single Wire Bond Structure

• Class I ESD Rating

• Automotive Dashboard Lighting

• White LEDs

• Backlighting

Description

Cree's Ultraviolet series of MegaBright LEDs are a new generation of solid state LED emitters which
combine highly efficient InGaN materials with Cree's proprietary SiC substrate to deliver superior
price performance for high intensity UV and white LEDs. These LED chips have a geometrically
enhanced vertical chip structure to maximize light extraction efficiency, and require only a single
wire bond connection. Cree's Ultraviolet series chips are individually tested for conformity to optical
and electrical specifications and the ability to withstand 400V ESD. These LEDs are useful in a
broad range of applications such as automotive lighting and white LEDs, yet can also be used in high
volume applications such as LCD backlighting. Cree's Ultraviolet series chips are compatible with
most radial and SMT LED assembly processes.

CXXX-MB290-E400 Chip Diagram

Topside View

G•SiC LED Chip

300 x 300 µ m
Mesa (junction)

240 x 240 µ m

Gold Bond Pad
120 µm Diameter

Anode (+)
h = 250 µ m

Backside
Metallization

Cathode (-)

InGaN

SiC Substrate

Bottom View

Die Cross Section

CPR3AQ Rev. C

G•SiC® Technology

Ultraviolet LEDs

CXXX-MB290-E400

Maximum Ratings at TA = 25°C

Notes 1&3

CXXX-MB290-E400

DC Forward Current 30mA
Peak Forward Current (1/10 duty cycle @ 1kHz) 100mA
LED Junction Temperature 125°C
Reverse Voltage 5 V
Operating Temperature Range -20°C to +80°C
Storage Temperature Range -30°C to +100°C
Electrostatic Discharge Threshold (HBM)

Note 2

400 V

Electrostatic Discharge Classification (MIL-STD-883E)

Note 2

Class 1

Typical Electrical/Optical Characteristics at TA = 25°C, If = 20mA

Note 3

Part Number Forward Voltage (V

f,

V) Radiant Flux

(P, mW)

Reverse Current

[I(Vr=5V), µA]

Peak Wavelength

(λ

p,

nm)

Halfwidth (λ

p,

nm)

Optical Rise Time

(τ, ns)

Typ Max Min Typ Max Min Typ Max Typ Typ

C405 3.7 4.0 10.0 12.0 10 400 405 410 26 30
C395 3.7 4.0 10.0 12.0 10 390 395 400 26 30

Mechanical Specifications

Note 4

CXXX-MB290-E400

Description Dimension Tolerance

P-N Junction Area (µm) 240 x 240 ± 25
Top Area (µm) 300 x 300 ± 50
Bottom Area (µm) 200 x 200 ± 25
Chip Thickness (µm) 250 ± 25
Au Bond Pad Diameter (µm) 120 ± 20
Au Bond Pad Thickness (µm) 1.2 ± 0.5
Back Contact Metal Width (µm) 15 -5, +10

Notes:

1) Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS1600 epoxy) for characterization. Seller makes no
representations regarding ratings for packages other than the T-1 3/4 package used by Seller. The forward currents (DC and Peak) are not limited by the G •SiC die but by the
effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized
in a specific package to determine limitations. Assembly processing temperature must not exceed 200°C maxi mum.

2) Product resistance to electrostatic discharge (ESD) is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to
approximate the maximum ESD ratings shown. Seller gives no other assur ances regarding the ability of Pro ducts to withstand E SD.

3) All Products conform to the listed minimum and maximum specifications for electrical and optical characteristics, when assembled and operated at 20 mA within the maximum
ratings shown above. Efficiency decreases at higher currents. Typical values given are the average values expected by Seller in large quantities and are provided for
information only. Seller give s no assurances Products shipped will exhibit such typic al ratings. All measureme nts were ma de using lamps in T-1 3/4 packages (with Hysol
OS1600 epoxy). Optical characteristics were measured in a Photoresearch Spectrascan Integrating Sphere. Illuminance E.

4) All Products conform to the listed mechanical specifications within the tolerances shown.

5)

Caution: To obtain optimum output efficiency, the maximum height of die attach epoxy on the side of the chip should not exceed 80µm.