Cree CGH35015 Service Manual

Subject to change without notice.

www.cree.com/wireless

CGH35015

15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX

Cree’s CGH35015 is a gallium nitride (GaN) high electron mobility

transistor designed specically for 802.16-2004 WiMAX Fixed Access

applications. GaN HEMTs offer high efciency, high gain and wide

bandwidth capabilities, which makes the CGH35015 ideal for 3.3-3.9GHz

WiMAX and BWA amplier applications. The transistor is available in both

screw-down, ange and solder-down, pill packages.

Package Type: 440166 and 440196

PN: CGH35015F and CGH35015P

Typical Performance Over 3.3-3.8GHz (T

Parameter 3.3 GHz 3.4 GHz 3.5 GHz 3.6 GHz 3.7 GHz 3.8 GHz Units

Small Signal Gain 13.6 12.8 12.3 12.2 12.3 12.8 dB

EVM at P

EVM at P

Drain Efciency at P

= 24 dBm 2.71 2.31 2.1 2.12 2.54 3.04 dBm

AVE

= 33 dBm 2.63 2.29 1.93 1.70 1.70 2.14 dBm

AVE

= 33 dBm 24.0 25.5 26.1 25.6 23.8 2.38 %

AVE

= 25˚C) of Demonstration Amplier

C

Note:
Measured in the CGH35015F-TB amplier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prex,
64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3,
PAR = 9.8 dB @ 0.01 % Probability on CCDF.

Features

• 3.3 - 3.9 GHz Operation

• 15 W Peak Power Capability

• 12 dB Small Signal Gain

• 2.0 W P

at < 2.0 % EVM

AVE

• 26 % Efciency at 2 W Average Power

• WiMAX Fixed Access 802.16-2004 OFDM

• WiMAX Mobile Access 802.16e OFDMA

Rev 3.2 – April 2012

1

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature

Parameter Symbol Rating Units Conditions

Drain-Source Voltage V
Gate-to-Source Voltage V
Power Dissipation P
Storage Temperature T
Operating Junction Temperature T
Maximum Forward Gate Current I
Maximum Drain Current
Soldering Temperature

1

2

I

Screw Torque

Thermal Resistance, Junction to Case
Case Operating Temperature

3

3

DISS

GMAX

DMAX

T

R

T

DSS

GS

STG

J

S

τ

θJC

C

84 Volts 25˚C

-10, +2 Volts 25˚C
7 Watts

-65, +150 ˚C
225 ˚C

4.0 mA 25˚C

1.5 A 25˚C

245 ˚C

60 in-oz

8.0 ˚C/W 85˚C

-40, +150 ˚C 30 seconds

Note:

1

Current limit for long term, reliable operation.

2

Refer to the Application Note on soldering at www.cree.com/products/wireless_appnotes.asp

3

Measured for the CGH35015F at P

DISS

= 7 W.

Electrical Characteristics (TC = 25˚C)

Characteristics Symbol Min. Typ. Max. Units Conditions

DC Characteristics

Gate Threshold Voltage V

Gate Quiescent Voltage V

Saturated Drain Current I

Drain-Source Breakdown Voltage V

RF Characteristics

Small Signal Gain G

Drain Efciency

Back-Off Error Vector Magnitude EVM

Error Vector Magnitude EVM

1

GS(th)

GS(Q)

DS

(BR)DSS

2,3

(TC = 25˚C, F0 = 3.5 GHz unless otherwise noted)

SS

4

η

1

2

-3.8 -3.0 -2.3 V

– -2.7 – V

2.9 3.5 – A VDS = 6.0 V, VGS = 2.0 V

120 – – V

10.5 12 – dB VDD = 28 V, IDQ = 100 mA

22 26 – % VDD = 28 V, IDQ = 100 mA, P

– 2.5 – %

– 2.5 – % VDD = 28 V, IDQ = 100 mA, P

VDS = 10 V, ID = 3.6 mA

DC

VDS = 28 V, ID = 60 mA

DC

VGS = -8 V, ID = 3.6 mA

DC

V

= 28 V, IDQ = 100 mA,

DD

= 18 dBm

P

AVE

= 2.0 W

AVE

= 2.0 W

AVE

No damage at all phase angles,

Output Mismatch Stress VSWR – – 10 : 1

Y

V

= 28 V, IDQ = 100 mA,

DD

= 2.0 W

P

AVE

Dynamic Characteristics

Input Capacitance C

Output Capacitance C

Feedback Capacitance C

GS

DS

GD

– 4.5 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz

– 1.3 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz

– 0.2 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz

Notes:

1

Measured on wafer prior to packaging.

2

Measured in the CGH35015F-TB test xture.

3

Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prex, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type

RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF.

4

Drain Efciency = P

OUT

/ PDC.

Copyright © 2005-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.

2

CGH35015 Rev 3.2

Cree, Inc.

Durham, North Carolina, USA 27703

4600 Silicon Drive

USA Tel: [phone]

Fax: [phone]

www.cree.com/wireless

Typical WiMAX Performance

EVM and Efficiency vs. Freq.

Efficiency

EVM (%)

dB)

S21 (dB)

Small Signal S-Parameters vs Frequency of CGH35015F in the CGH35015F-TB

16

14

VDD = 28 V, IDQ = 100 mA

6

S21

3

12

10

0

-3

B)

8

-6

S11 (

6

4

2

0

2.5 2.6 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4 4.1 4.2 4.3 4.4

S21

S11

S11

-9

-12

-15

-18

Frequency (GHz)

Typical EVM and Efciency versus Frequency of CGH35015F in the CGH35015F-TB

VDD = 28 V, IDQ = 100 mA, 802.16-2004 OFDM, PAR=9.8 dB

6.0

5.0

Drain

Efficiency

30%

25%

4.0

3.0

2.0

EVM @ 24dBm

1.0

0.0

3.3 3.4 3.4 3.5 3.5 3.6 3.6 3.7 3.7 3.8 3.8

EVM @ 33dBm

Eff. @ 33dBm

EVM @
24 dBm

EVM @
33 dBm

Frequency (GHz)

Note:
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prex, 64 QAM Modulated
Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.

Copyright © 2005-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.

3

CGH35015 Rev 3.2

20%

15%

10%

5%

0%

Cree, Inc.

Durham, North Carolina, USA 27703

4600 Silicon Drive

USA Tel: [phone]

Fax: [phone]

www.cree.com/wireless

Typical WiMAX Performance

Drain Efficiency

Gain (dB)

iency

EVM (%)

Drain Efciency and Gain vs Output Power of the CGH35015F in the CGH35015F-TB

VDD = 28 V, IDQ = 100 mA, 802.16-2004 OFDM, PAR = 9.8 dB

16

32%

14

12

10

8

6

4

2

0

16 18 20 22 24 26 28 30 32 34

Gain

Efficiency

Gain

Drain Efficiency

28%

24%

20%

16%

12%

8%

4%

0%

Output Power (dBm)

Typical EVM and Efciency versus Power Output of CGH35015F in the CGH35015F-TB

VDD = 28 V, IDQ = 100 mA, 802.16-2004 OFDM, PAR=9.8 dB

5.0

4.5

4.0

3.5

EVM

Efficiency

30%

27%

24%

21%

3.0

2.5

2.0

1.5

1.0

0.5

0.0

16 18 20 22 24 26 28 30 32 34

EVM

Output Power (dBm)

Note:
Under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prex, 64 QAM
Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.

Copyright © 2005-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.

4

CGH35015 Rev 3.2

Efficiency

18%

15%

iency

Effic

12%

9%

6%

3%

0%

Durham, North Carolina, USA 27703

4600 Silicon Drive

USA Tel: [phone]

Fax: [phone]

www.cree.com/wireless

Cree, Inc.