CPCLA IBB110P, IBB110PTR Datasheet

1

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IBB110P

DS-IBB110P-R2

The IBB110P Multifunction Telecom switch combines two
350V Form B relays and one optocoupler in a single
package. The relay uses optically coupled MOSFET tech­nology to provide 1500V of input to output isolation. The
efficient MOSFET switches and photovoltaic die use
Clare’s patented OptoMOS architecture. The optically
coupled input uses highly efficient GaAIAs infrared LEDs.
IBB110P’s allow telecom circuit designers to combine
three discrete functions in a single component. The The
IBB110P small package uses less space than traditional
discrete component solutions.

• Telecommunications

• Telecom Switching

• Tip/Ring Circuits

• Modem Switching (Laptop, Notebook, Pocket Size)

• Hookswitch

• Dial Pulsing

• Ground Start

• Ringer Injection

• Instrumentation

• Multiplexers

• Data Acquisition

• Electronic Switching

• I/O Subsystems

• Meters (Watt-Hour, Water, Gas)

• Medical Equipment-Patient/Equipment Isolation

• Security

• Aerospace

• Industrial Controls

• UL Recognized: File Number E76270

• CSA Certified: File Number LR 43639-12

• VDE Compatible

• BSI Certified:

• BS EN 60950:1992 (BS7002:1992)

Certificate #:7969

• BS EN 41003:1993

Certificate #:7969

• Three Functions in One Package

• Small 16 Pin SOIC Package (PCMCIA Compatible)

• Bi-Directional Current Sensing

• Bi-Directional Current Switching

• 3750V

RMS

Input/Output Isolation

• FCC Compatible

• No EMI/RFI Generation

• Machine Insertable, Wave Solderable

• Tape & Reel Versions Available

Applications

Features

Description

Approvals

Integrated Telecom Circuits

Ordering Information

Part # Description

IBB110P 16 Pin SOIC (50/Tube)
IBB110PTR 16 Pin SOIC (1000/Reel)

IBB110P Units

Load Voltage 350 V
Load Current 100 mA
Max R

ON

35 Ω

Pin Configuration

(N/C)

(N/C)

(Form B)

(Form B)

IBB110P Pinout

1

2

1. (N/C)

2. + LED - Form B Relay #1

3. – LED - Form B Relay #1

4. + LED - Form B Relay #2

5. – LED - Form B Relay #2

6. Emitter - Phototransistor

7. Collector - Phototransistor

8. (N/C)

9. LED - Phototransistor +/–

10. LED - Phototransistor –/+

11. Output - Form B Relay #2

12. Common Source Relay #2

13. Output - Form B Relay #2

14. Output - Form B Relay #1

15. Common Source Relay #1

16. Output - Form B Relay #1

3

4

16

15

14

13

5

6

7

8

12

11

10

9

Switching Characteristics of

Normally Open (Form A) Devices

10ms

CONTROL

+

90%

10%

LOAD

Switching Characteristics of

Normally Closed (Form B) Devices

CONTROL

+

T

ON

10ms

90%

+

10%

+

T

OFF

+

10%

T

OFF

+

90%

T

ON

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IBB110P

Rev. 2

Absolute Maximum Ratings are stress ratings. Stresses
in excess of these ratings can cause permanent damage
to the device. Functional operation of the device at these
or any other conditions beyond those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to the absolute maximum ratings
for an extended period may degrade the device and effect
its reliability.

Absolute Maximum Ratings (@ 25˚ C)

2

Parameter Min Typ Max Units

Total Package Dissipation - - 1

1

W

Isolation Voltage

Input to Output 3750 - - V

RMS

Operational Temperature -40 - +85 °C
Storage Temperature -40 - +125 °C
Soldering Temperature - - +220 °C

(10 Seconds Max.)

1

Above 25˚ derate linerity 1.67mw/˚C

Electrical Characteristics

Parameter Conditions Symbol Min Typ Max Units

Relay Portion

Output Characteristics @ 25°C

Load Voltage (Peak) I

L

= 1µA V

L

- - 350 V

Load Current (Continuous) - I

L

- - 100 mA

Peak Load Current 10ms I

LPK

- - 350 mA

On-Resistance I

L

=100mA R

ON

-- 35Ω

Off-State Leakage Current V

L

=350V; TJ=25°C I

LEAK

-- 1µA

Switching Speeds

Turn-On I

F

=5mA, VL=10V T

ON

-- 3ms

Turn-Off I

F

=5mA, VL=10V T

OFF

-- 3ms

Output Capacitance VL=50V, f=1MHz - - 25 - pF

Relay Portion

Input Characteristics @ 25°C

Input Control Current I

L

=100mA I

F

5- 50mA

Input Dropout Current I

L

=1mA I

F

0.4 - - mA

Input Voltage Drop I

F

=5mA V

F

0.9 1.2 1.4 V

Reverse Input Voltage - V

R

-- 5 V

Reverse Input Current VR=5V I

R

- - 10 µA

Detector Portion

Output Characteristics @ 25°C

Phototransistor Blocking Voltage I

C

=10µA BV

CEO

20 50 - V

Phototransistor Dark Current VCE=5V, I

F

=0mA I

CEO

- 50 500 nA

Saturation Voltage I

C

=2mA, IF=16mA V

SAT

- 0.3 0.5 V

Current Transfer Ratio IF=6mA, VCE=0.5V C

TR

33 - - %

Detector Portion

Input Characteristics @ 25°C

Input Control Current I

C

=2mA,VCE=0.5V I

F

62 - mA

Input Voltage Drop IF=5mA I

CEO

0.9 1.2 1.4 V

Input Current I

C

=1µA, VCE=5V - 5 25 - µA

(Detector must be off)

Input to Output Capacitance V

L

=50V, f=1MHz C

I/O

-3 - pF

Input to Output Isolation - V

I/O

3750 - - V

RMS