Continental Device India Limited TIP120, TIP121, TIP122, TIP125, TIP126 User Manual
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IS / IECQC 700000
IS / IECQC 750100
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002
Lic# QSC/L- 000019.2
TO-220 Plastic Package
TIP120, TIP121, TIP122
TIP125, TIP126, TIP127
TIP120, 121, 122 NPN PLASTIC POWER TRANSISTORS
TIP125, 126, 127 PNP PLASTIC POWER TRANSISTORS
Power Darlingtons for Linear and Switching Applications
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1
2
C
B
F
E
H
A
O
1
N
23
L
O
K
D
G
J
M
DIM MIN. MA X.
A 14.42 16.51
B 9.63 10.67
C 3.5 6 4.83
D0.90
E 1 .1 5 1.40
F 3.7 5 3.88
G 2 .2 9 2.7 9
H 2.5 4 3 .4 3
J0.56
K 12.70 14.73
L 2.8 0 4.0 7
M 2.0 3 2.9 2
N 31.24
ODEG 7
All diminsions in mm .
4
ABSOLUTE MAXIMUM RATINGS
120 121 122
125 126 127
Collector-base voltage (open emitter) V
Collector-emitter voltage (open base) V
Collector current I
Total power dissipation up to T
= 25°C P
C
Junction temperature T
C
tot
j
CBO
CEO
max. 60 80 100 V
max. 60 80 100 V
max. 5.0 A
max. 65 W
max. 150 °C
Collector-emitter saturation voltage
= 3 A; IB = 12 mA V
I
C
CEsat
max. 2.0 V
D.C. current gain
= 0.5 A; VCE = 3 V h
I
C
RATINGS (at T
=25°C unless otherwise specified) 120 121 122
A
FE
min. 1.0
125 126 127
Collector-base voltage (open emitter) V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Continental Device India Limited Data Sheet Page 1 of 3
CBO
CEO
EBO
max. 60 80 100 V
max. 60 80 100 V
max. 5.0 V
TIP120, TIP121, TIP122
TIP125, TIP126, TIP127
Collector current I
Collector current (peak) I
Base current I
Total power dissipation up to T
= 25°C P
C
C
CM
B
tot
max. 5.0 A
max. 8 A
max. 120 mA
max. 65 W
Derate above 25°C max 0.52
Total power dissipation up to TA = 25°C P
tot
max. 2 W
Derate above 25°C max 0.016
Junction temperature T
Storage temperature T
j
stg
max. 150 °C
–65 to +150 º
THERMAL RESISTANCE
From junction to ambient R
From junction to case R
th j–a
th j–c
62.5 °
1.92 °
CHARACTERISTICS
= 25°C unless otherwise specified 120 121 122
T
amb
125 126 127
Collector cutoff current
= 0; VCB = 60 V I
I
E
= 0; VCB = 80 V I
I
E
= 0; VCB = 100 V I
I
E
= 0; VCE = 30V I
I
B
= 0; VCE = 40V I
I
B
= 0; VCE = 50V I
I
B
CBO
CBO
CBO
CEO
CEO
CEO
max. 0.2 – – mA
max. – 0.2 – m A
max. – – 0. 2 m A
max. 0.5 – – mA
max. – 0.5 – m A
max. – – 0. 5 m A
Emitter cut-off current
= 0; VEB = 5 V I
I
C
EBO
max. 2.0 mA
Breakdown voltages
= 100 mA; IB = 0 V
I
C
= 1 mA; IE = 0 V
I
C
= 1 mA; IC = 0 V
I
E
CEO(sus)
CBO
EBO
* min. 60 80 100 V
min. 60 80 100 V
min. 5.0 V
Saturation voltages
= 3.0 A; IB = 12 mA V
I
C
= 5.0 A; IB = 20 mA V
I
C
* max. 2. 0 V
CEsat
* max. 4. 0 V
CEsat
Base-emitter on voltage
= 3A; VCE = 3V V
I
C
* max. 2.5 V
BE(on)
D.C. current gain
= 0.5A; VCE = 3V hFE* min. 1.0
I
C
= 3A; VCE = 3V min. 1 .0
I
C
Small signal current gain
= 3A; VCE = 4V; f = 1 MHz |hfe| min. 4.0
I
C
Output capacitance at f = 0.1 MHz
= 0; VCB = 10V PNP C
I
E
NPN C
o
o
max. 300 pF
max. 200 pF
W/°C
W/°C
C
C/W
C/W
* Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2%.
Continental Device India Limited Data Sheet Page 2 of 3
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