Continental Device India Limited TIP100, TIP101, TIP102, TIP105, TIP106 User Manual
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IS / IECQC 700000
IS / IECQC 750100
查询TIP105供应商
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002
Lic# QSC/L- 000019.2
TO-220 Plastic Package
TIP100, TIP101, TIP102
TIP105, TIP106, TIP107
TIP100, 101, 102 NPN PLASTIC POWER TRANSISTORS
TIP105, 106, 107 PNP PLASTIC POWER TRANSISTORS
Power Darlingtons for Linear and Switching Applications
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1
2
C
B
F
E
H
A
O
1
N
23
L
O
K
D
G
J
M
DIM MIN. MA X.
A 14.42 16.51
B 9.63 10.67
C 3.5 6 4.83
D0.90
E 1 .1 5 1.40
F 3.7 5 3.88
G 2 .2 9 2.7 9
H 2.5 4 3 .4 3
J0.56
K 12.70 14.73
L 2.8 0 4.0 7
M 2.0 3 2.9 2
N 31.24
ODEG 7
All diminsions in mm .
4
ABSOLUTE MAXIMUM RATINGS
100 101 102
105 106 107
Collector-base voltage (open emitter) V
Collector-emitter voltage (open base) V
Collector current I
Total power dissipation up to T
= 25°C P
C
Junction temperature T
C
tot
j
CBO
CEO
max. 60 80 100 V
max. 60 80 100 V
max. 8.0 A
max. 80 W
max. 150 °C
Collector-emitter saturation voltage
= 3 A; IB = 6 mA V
I
C
CEsat
max. 2.0 V
D.C. current gain
= 3 A; VCE = 4 V h
I
C
FE
min. 1.0 K
max. 20 K
RATINGS (at T
=25°C unless otherwise specified)
A
Limiting values 100 101 102
105 106 107
Collector-base voltage (open emitter) V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
Continental Device India Limited Data Sheet Page 1 of 3
CBO
CEO
EBO
max. 60 80 100 V
max. 60 80 100 V
max. 5.0 V
TIP100, TIP101, TIP102
TIP105, TIP106, TIP107
Collector current I
Collector peak current I
Base current I
Total power dissipation up to T
= 25°C P
C
C
CM
B
tot
max. 8.0 A
max. 15 A
max. 1.0 A
max. 80 W
Derate above 25°C max 0.64 W/°C
Total power dissipation up to T
= 25°C P
A
tot
max. 2.0 W
Derate above 25°C max 0.016 W/°C
Junction temperature T
Storage temperature T
j
stg
max. 15 0 °C
–65 to +150 °
C
THERMAL RESISTANCE
From junction to ambient R
From junction to case R
th j–a
th j–c
62.5 °
1.56 °
C/W
C/W
CHARACTERISTICS
= 25°C unless otherwise specified
T
amb
100 101 102
105 106 107
Collector cutoff current
= 0; VCE = 30 V I
I
B
= 0; VCE = 40 V I
I
B
= 0; VCE = 50 V I
I
B
= 0; VCB = 60V I
I
E
= 0; VCB = 80V I
I
E
= 0; VCB = 100V I
I
E
CEO
CEO
CEO
CBO
CBO
CBO
max. 50 – – µA
max. – 50 – µA
max. – – 50 µA
max. 50 – – µA
max. – 50 – µA
max. – – 50 µA
Emitter cut-off current
= 0; VEB = 5 V I
I
C
EBO
max. 8 mA
Breakdown voltages
= 30 mA; IB = 0 V
I
C
= 1 mA; IE = 0 V
I
C
= 1 mA; IC = 0 V
I
E
CEO(sus)
CBO
EBO
* min. 60 80 100 V
min. 60 80 100 V
min. 5.0 V
Saturation voltages
= 3 A; IB = 6 mA V
I
C
= 8 A; IB = 80 mA V
I
C
* max. 2.0 V
CEsat
* max. 2.5 V
CEsat
Base-emitter on voltage
= 8 A; VCE = 4 V V
I
C
* max. 2.8 V
BE(on)
D.C. current gain
= 3 A; VCE = 4 V hFE* min. 1.0 K
I
C
max. 20 K
= 8 A; VCE = 4 V hFE* min. 200
I
C
Small signal current gain
= 3A; VCE = 4V; f = 1.0 MHz |hfe| min. 4.0
I
C
Output capacitance f = 0.1 MHz
= 0; VCB = 10V, PNP C
I
E
o
max. 30 0 pF
NPN max. 20 0 pF
Forward voltage of commutation diode
= –IC = 10A; IB = 0 VF* max. 2.8 V
I
F
* Pulsed: pulse duration = 300 µs; duty cycle ≤ 2%.
Continental Device India Limited Data Sheet Page 2 of 3
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