Continental Device India Limited CJF100, CJF105, CJF101, CJF106, CJF102 User Manual
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR POWER DARLINGTON TRANSISTORS NPN PNP
CJF100 CJF105
CJF101 CJF106
CJF102 CJF107
Power Darlin
TO-220FP Full
Plastic Packa
ton for Linear and Switching Applications
Isolated
e
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL CJF100 CJF101 CJF102 UNIT
CJF105 CJF106 CJF107
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
RMS Isolation Voltage ( for 1sec, R.H.
<30%, TA=25ºC )
V
V
V
(1) V
(b) 1500
Collector Current - Continuous
Peak
Base Current
Total Power Dissipation @ TC=25ºC P
Derate Above 25ºC
Total Power Dissipation @ TA=25ºC P
Derate Above 25ºC
Operating And Storage Junction
T j, T
CBO
CEO
EBO
(a)
ISOL
I
C
I
CM
I
B
tot
tot
stg
60 80 100 V
60 80 100 V
5.0 V
3500
V
8.0 A
15
1.0 A
80 W
0.64 W/ºC
2.0 W
0.016 W/ºC
- 65 to +150 ºC
RMS
Temperature Range
(1) RMS Isolation Voltage : (a) 3500 V
with Package in Clip Mounting Position (b) 1500 V
RMS
with Package in
RMS
Screw Mounting Position (for 1sec, R.H.<30%Ta=25ºC; Pulse Test: Pulse Width </=300µs, Duty Cycle</=2%)
THERMAL RESISTANCE
Characteristics SYMBOL MAX UNIT
From Junction to Ambient
From Junction to Case
R
R
th(j-a)
th(j-c)
62.5 ºC/W
1.56 ºC/W
ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise)
DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT
Collector Emitter Sustaining Voltage
Collector Cut Off Current
Emitter Cut Off Current
Continental Device India Limited
V
CEO (sus)
*I
I
CEO VCE
I
CBO
I
EBO VEB
= I/2 Rated V
VCB= Rated V
Data Sheet Page 1 of 4
=30mA, IB=0
C
CJF100/105
CJF101/106
CJF102/107
, IB=0
CEO
, IE=0
CBO
=5V, IC=0
60 - V
80 - V
100 - V
-50
-50
- 8.0 mA
µA
µA
SILICON PLANAR POWER DARLINGTON TRANSISTORS NPN PNP
y
g
CJF100 CJF105
CJF101 CJF106
CJF102 CJF107
TO-220FP Full
Plastic Packa
Isolated
e
ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise)
DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT
Collector Emitter Saturation Voltages
Base Emitter On Voltage
DC Current Gain
V
*I
CE (sat)
IC=8A, IB=80mA
V
*I
BE (on)
h
*I
FE
IC=8A, VCE=4V
=3A, IB=6mA
C
=8A, VCE=4V
C
=3A, VCE=4V
C
- 2.0 V
- 2.5
- 2.8 V
1000 20000
200 -
DYNAMIC CHARACTERISTICS
Small Signal Current Gain
Output Capacitance
Forward Voltage of Commutation Diode
lhfelIC=3A, VCE=4V,f=1MHz
C
VCB=10V, IE=0, f=0.1MHz
o
PNP
NPN
VF*I
= - IC=10A, IB=0
F
4.0 -
- 300 pF
- 200
- 6.0 V
* Pulse Test: Pulse Width < 300µs, Duty Cycle < 2 %
Continental Device India Limited
Data Sheet Page 2 of 4
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