The new low-cost SCALE-2 dual-driver core 2SC0435T combines unrivalled compactness with broad
applicability. The driver was designed for universal applications requiring high reliability. The 2SC0435T drives
all usual high-power IGBT modules up to 1700V. The embedded paralleling capability allows easy inverter
design covering higher power ratings. Multi-level topologies are also supported.
The 2SC0435T is the most compact driver core in its power range available for industrial applications, with a
footprint of only 57.2 x 51.6mm and an insertion height of max. 20mm. It allows even the most restricted
insertion spaces to be efficiently used.
The 2SC0435T is a driver core equipped with CONCEPT’s latest SCALE-2 chipset /1/. The SCALE-2 chipset is a
set of application-specific integrated circuits (ASICs) that cover the main range of functions needed to design
intelligent gate drivers. The SCALE-2 driver chipset is a further development of the proven SCALE technology
/2/.
The 2SC0435T targets medium-power, dual-channel IGBT and MOSFET applications. The driver supports
switching up to 100kHz at best-in-class efficiency. The 2SC0435T comprises a complete dual-channel IGBT
driver core, fully equipped with an isolated DC/DC converter, short-circuit protection, advanced active
clamping and supply-voltage monitoring.
VISO2
REF2
VCE2
ACL2
GH2
VCC
VDC
VDC
VCC
TRPB
VCC
GND
Isolation Barrier
Channel 2
INP
Vdd
ActClamp
IGD
Ref
iVce
VISO2
AUXGH
GH
TRNB
INA
INB
SO2
TB
MOD
GND
GND
INA
INB
SOASO1
SOB
Tb
Mod
Vss
GND
LDI
DCDC1
DCDC2
TRPA
TRNA
VDC
GND
COM2VISO2
COM1VISO1
Fig. 2 Block diagram of the driver core 2SC0435T
Channel 1
INN
INP
INN
VISO1
Vdd
IGD
AUXGL
VeeVss
iVce
ActClamp
AUXGH
AUXGL
VeeVss
Ref
GL
GH
GL
VISO2
COM2
COM2
VISO1
VISO1
COM1
COM1
GL2
VISO2
VE2
COM2
REF1
VCE1
ACL1
GH1
GL1
VISO1
VE1
COM1
IGBT-Driver.comPage 3
Page 4
2SC0435T
Description and Application Manual
Mechanical Dimensions
Fig. 3 Mechanical drawing
The primary side and secondary side pin grid is 2.54mm (100mil) with a pin cross section of
0.64mmx0.64mm. Total outline dimensions of the board are 57.2mmx51.6mm. The total height of the driver
is max. 20mm measured from the bottom of the pin bodies to the top of the populated PCB.
Recommended diameter of solder pads: Ø 2mm (79 mil)
Recommended diameter of drill holes: Ø 1mm (39 mil)
Page 4 INTELLIGENT POWER ELECTRONICS
Page 5
2SC0435T
Target
Pin Designation
Pin No. and Name Function
Primary Side
1 VDC DC/DC converter supply
2 SO1 Status output channel 1; normally high-impedance, pulled down to low on fault
3 SO2 Status output channel 2; normally high-impedance, pulled down to low on fault
4 MOD Mode selection (direct/half-bridge mode)
5 TB Set blocking time
6 VCC Supply voltage; 15V supply for primary side
7 GND Ground
8 INA Signal input A; non-inverting input relative to GND
9 INB Signal input B; non-inverting input relative to GND
10 GND Ground
Secondary Sides
11 ACL1 Active clamping feedback channel 1; leave open if not used
12 VCE1 V
13 REF1 Set V
14 COM1 Secondary side ground channel 1
15 VE1 Emitter channel 1; connect to (auxiliary) emitter of power switch
16 VISO1 DC/DC output channel 1
17 GH1 Gate high channel 1; pulls gate high through turn-on resistor
18 GL1 Gate low channel 1; pulls gate low through turn-off resistor
19 Free
20 Free
21 Free
22 ACL2 Active clamping feedback channel 2; leave open if not used
23 VCE2 V
24 REF2 Set V
25 COM2 Secondary side ground channel 2
26 VE2 Emitter channel 2; connect to (auxiliary) emitter of power switch
27 VISO2 DC/DC output channel 2
28 GH2 Gate high channel 2; pulls gate high through turn-on resistor
29 GL2 Gate low channel 2; pulls gate low through turn-off resistor
Note: Pins with the designation “Free” are not physically present.
sense channel 1; connect to IGBT collector through resistor network
CE
detection threshold channel 1; resistor to VE1
CE
sense channel 2; connect to IGBT collector through resistor network
CE
detection threshold channel 2; resistor to VE2
CE
IGBT-Driver.comPage 5
Page 6
2SC0435T
Description and Application Manual
Recommended Interface Circuitry for the Primary Side Connector
+3.3V...+15V
+15V
R2
Fault1
Fault2
PWM1
PWM2
GND
R1
R
M
R
B
VDC
SO1
SO2
MOD
TB
VCC
GND
INA
INB
GND
1
2
3
4
5
6
7
8
9
10
Driver 2SC0435T
Fig. 4 Recommended user interface of 2SC0435T (primary side)
Both ground pins must be connected together with low parasitic inductance. A common ground plane or wide
tracks are strongly recommended. The connecting distance between ground pins must be kept at a minimum.
Description of Primary Side Interface
General
The primary side interface of the driver 2SC0435T is very simple and easy to use.
The driver primary side is equipped with a 10-pin interface connector with the following terminals:
• 2 x power-supply terminals
• 2 x drive signal inputs
• 2 x status outputs (fault returns)
• 1 x mode selection input (half-bridge mode / direct mode)
• 1 x input to set the blocking time
All inputs and outputs are ESD-protected. Moreover, all digital inputs have Schmitt-trigger characteristics.
VCCterminal
The driver has one VCC terminal on the interface connector to supply the primary side electronics with 15V.
Page 6 INTELLIGENT POWER ELECTRONICS
Page 7
2SC0435T
Target
VDC terminal
The driver has one VDC terminal on the interface connector to supply the DC-DC converters for the secondary
sides.
VDC should be supplied with 15V. It is recommended to connect the VCC and VDC terminals to a common
+15V power supply. In this case the driver limits the inrush current at startup and no external current
limitation of the voltage source for VDC is needed.
MOD (mode selection)
The MOD input allows the operating mode to be selected with a resistor connected to GND.
Direct mode
If the MOD input is connected to GND, direct mode is selected. In this mode, there is no interdependence
between the two channels. Input INA directly influences channel 1 while INB influences channel 2. High level
at an input (INA or INB) always results in turn-on of the corresponding IGBT. In a half-bridge topology, this
mode should be selected only when the dead times are generated by the control circuitry so that each IGBT
receives its own drive signal.
Caution: Synchronous or overlapping timing of both switches of a half-bridge basically shorts the DC link.
Half-bridge mode
If the MOD input is connected to GND with a resistor 71k<RM<181k, half-bridge mode is selected. In this
mode, the inputs INA and INB have the following functions: INA is the drive signal input while INB acts as the
enable input (see Fig. 5).
When input INB is low level, both channels are blocked. If it goes high, both channels are enabled and follow
the signal on the input INA. At the transition of INA from low to high, channel 2 turns off immediately and
channel 1 turns on after a dead time T
INA
INB
Gate G1
Gate G2
+3.3...15V
0V
+3.3...15V
0V
+15V
-10V
+15V
-10V
.
D
Both channels OFF
Dead time (both channels OFF)
Fig. 5 Signals in half-bridge mode
IGBT-Driver.comPage 7
Page 8
2SC0435T
μ
Description and Application Manual
The value of the dead time TD is determined by the value of the resistor Rm according to the following formula
(typical value):
7.52][5.31][+⋅=ΩsTkR
DM
where 0.6μs<
INA, INB (channel drive inputs, e.g. PWM)
INA and INB are basically drive inputs, but their function depends on the MOD input (see above). They safely
recognize signals in the whole logic-level range between 3.3V and 15V. Both input terminals feature Schmitttrigger characteristics (refer to the driver data sheet /3/). An input transition is triggered at any edge of an
incoming signal at INA or INB.
SO1, SO2 (status outputs)
The outputs SOx have open-drain transistors. When a fault condition (primary side supply undervoltage,
secondary side supply undervoltage, IGBT short-circuit or overcurrent) is detected, the corresponding status
output SOx goes to low (connected to GND). Otherwise, the output has high impedance.
T
<4.1μs and 72kΩ<
D
R
<182kΩ
M
The maximum SOx current in a fault condition should not exceed the value specified in the driver data sheet
/3/.
Both SOx outputs can be connected together to provide a common fault signal (e.g. for one phase). However,
it is recommended to evaluate the status signals individually to allow fast and precise fault diagnosis.
How the status information is processed
a) A fault on the secondary side (detection of short-circuit of IGBT module or supply undervoltage) is
transmitted to the corresponding SOx output immediately. The SOx output is automatically reset
(returning to a high impedance state) after a blocking time T
adjusting the blocking time T
b) A supply undervoltage on the primary side is indicated to both SOx outputs at the same time. Both SOx
outputs are automatically reset (returning to a high impedance state) when the undervoltage on the
primary side disappears.
) for timing information).
B
has elapsed (refer to “TB (input for
B
TB (input for adjusting the blocking time TB)
The terminal TB allows the blocking time to be set by connecting a resistor RB to GND (see Fig. 4). The
following equation calculates the value of R
desired blocking time T
BB
(typical value):
B
51][0.1][+⋅=ΩmsTkR
where 20ms<TB<130ms and 71kΩ<RB<181kΩ
connected between pins TB and GND in order to program the
B
The blocking time can also be set to a minimum of 9µs (typical) by selecting R
be left floating.
Note: It is also possible to apply a stabilized voltage at TB. The following equation is used to calculate the
voltage V
Page 8 INTELLIGENT POWER ELECTRONICS
between TB and GND in order to program the desired blocking time TB (typical value):
B
02.1][02.0][+⋅=msTVV
BB
where 20ms<TB<130ms and 1.42<VB<3.62V
=0Ω. The terminal TB must not
B
Page 9
2SC0435T
2
Target
Recommended Interface Circuitry for the Secondary Side Connectors
Channel 2
Driver
2SC0435T
Channel 1
29
28
27
26
25
24
23
22
18
17
16
15
14
13
12
11
GL2
GH2
VISO2
VE2
COM2
REF2
VCE2
ACL2
GL1
GH1
VISO1
VE1
COM1
REF1
VCE1
ACL1
C22
Rth2
20
C21
Rth1
20
4.7k
C12
4.7k
C11
Ca2
Ca1
Rg,off2
Rg,on2
120k
Rg,off1
Rg,on1
120k
D52
D32
D51
D31
D42
D41
Racl2
Cacl2
Racl1
D62
D61
Rvce2
D12
Rvce1
D11
Gate 2
Emitter
Collector 2
D22
Gate 1
Emitter 1
Collector 1
D21
Cacl1
Fig. 6 Recommended user interface of 2SC0435T with advanced active clamping (secondary sides)
IGBT-Driver.comPage 9
Page 10
2SC0435T
Description and Application Manual
Description of Secondary Side Interfaces
General
Each driver’s secondary side (driver channel) is equipped with an 8-pin interface connector with the following
terminals (x stands for the number of the drive channel 1 or 2):
• 1 x DC/DC output terminal VISOx
• 1 x emitter terminal VEx
• 1 x reference terminal REFx for overcurrent or short-circuit protection
• 1x collector sense terminal VCEx
• 1x active clamping terminal ACLx
• 1x turn-on gate terminals GHx
• 1x turn-off gate terminals GLx
All inputs and outputs are ESD-protected.
DC/DC output (VISOx), emitter (VEx) and COMx terminals
The driver is equipped with blocking capacitors on the secondary side of the DC/DC converter (for values,
refer to the data sheet /3/).
Power semiconductors with a gate charge of up to 5μC can be driven without additional capacitors on the
secondary side. For IGBTs or MOSFETs with a higher gate charge, a minimum value of 2µF external blocking
capacitance is recommended for every 1µC gate charge beyond 5µC. The blocking capacitors must be placed
between VISOx and VEx (C1x in Fig. 6) as well as between VEx and COMx (C2x in Fig. 6). They must be
connected as close as possible to the driver’s terminal pins with minimum inductance. It is recommended to
use the same capacitance value for both C1x and C2x. Ceramic capacitors with a dielectric strength >20V are
recommended.
If the capacitances C1x or C2x exceed 100µF, please contact CONCEPT’s support service.
No static load should be applied between VISOx and VEx, or between VEx and COMx. A static load can be
applied between VISOx and COMx if necessary.
Reference terminal (REFx)
The reference terminal REFx allows the threshold to be set for short-circuit and/or overcurrent protection with
a resistor placed between REFx and VEx. A constant current of 150µA is provided at pin REFx.
Collector sense (VCEx)
The collector sense must be connected to the IGBT collector or MOSFET drain with the circuit shown in Fig. 6
in order to detect an IGBT or MOSFET overcurrent or short-circuit.
• It is recommended to dimension the resistor value of R
flowing through R
as well as series connected resistor. In any case, the min. creepage distance related to the application
should be considered.
Page 10 INTELLIGENT POWER ELECTRONICS
(e.g. 1.2-1.8MΩ for V
vcex
in order to get a current of about 0.6-1mA
vcex
=1200V). It is possible to use a high-voltage resistor
DC-LINK
Page 11
2SC0435T
Target
• The diode D6x must have a very low leakage current and a blocking voltage of > 40V (e.g. BAS316).
For more details about the functionality of this feature and the dimensioning of the response time, refer to
“VCE monitoring / short-circuit protection” on page 13.
Active clamping (ACLx)
Active clamping is a technique designed to partially turn on the power semiconductor as soon as the collectoremitter (drain-source) voltage exceeds a predefined threshold. The power semiconductor is then kept in linear
operation.
Basic active clamping topologies implement a single feedback path from the IGBT’s collector through transient
voltage suppressor devices (TVS) to the IGBT gate. The 2SC0435T supports CONCEPT’s advanced active
clamping, where the feedback is also provided to the driver’s secondary side at pin ACLx: as soon as the
voltage on the right side of the 20Ω resistor (see Fig. 6) exceeds about 1.3V, the turn-off MOSFET is
progressively switched off in order to improve the effectiveness of the active clamping and to reduce the
losses in the TVS. The turn-off MOSFET is completely off when the voltage on the right side of the 20Ω
resistors (see Fig. 6) approaches 20V (measured to COMx).
It is recommended to use the circuit shown in Fig. 6. The following parameters must be adapted to the
application:
• TVS D1x, D2x: it is recommended to use:
- 1x440V TVS (or 2x220V TVS) with 600V IGBTs with DC-link voltages up to 400V
- 2x440V TVS (or 4x220V TVS) with 1200V IGBTs with DC-link voltages up to 800V and
- 3x440V TVS (or 6x220V TVS) with 1700V IGBTs with DC-link voltages up to 1200V
• Raclx and Caclx: These parameters allow the effectiveness of the active clamping as well as the losses
in the TVS to be optimized. It is recommended to determine the value with measurements in the
application. Typical values are: Raclx=0…150Ω and Raclx*Caclx=100ns…500ns.
• D3x, D4x and D5x: it is recommended to use Schottky diodes with blocking voltages >30V (>1A
depending on the application).
Please note that the 20Ω resistor as well as diodes D3x, D4x and D5x should not be omitted if advanced active
clamping is used. If advanced active clamping is not used the 20Ω resistor as well as diodes D3x, D4x can be
omitted.
Gate turn-on (GHx) and turn-off (GLx) terminals
These terminals allow the turn-on (GHx) and turn-off (GLx) gate resistors to be connected to the gate of the
power semiconductor. The GHx and GLx pins are available as separated terminals in order to set the turn-on
and turn-off resistors independently without the use of an additional diode. Please refer to the driver data
sheet /3/ for the limit values of the gate resistors used.
A resistor between GLx and COMx of 4.7k (other values are also possible) may be used in order to provide a
low-impedance path from the IGBT/MOSFET gate to the emitter/source even if the driver is not supplied with
power. No static load (e.g. resistors) must be placed between GLx and the emitter terminal VEx.
Note however that it is not advisable to operate the power semiconductors within a half-bridge with a driver in
the event of a low supply voltage. Otherwise, a high rate of increase of V
IGBTs.
IGBT-Driver.comPage 11
may cause partial turn-on of these
ce
Page 12
2SC0435T
Description and Application Manual
How Do 2SC0435T SCALE-2 Drivers Work in Detail?
Power supply and electrical isolation
The driver is equipped with a DC/DC converter to provide an electrically insulated power supply to the gate
driver circuitry. All transformers (DC/DC and signal transformers) feature safe isolation to EN 50178,
protection class II between primary side and either secondary side.
Note that the driver requires a stabilized supply voltage.
Power-supply monitoring
The driver’s primary side as well as both secondary-side driver channels are equipped with a local
undervoltage monitoring circuit.
In the event of a primary-side supply undervoltage, the power semiconductors are driven with a negative gate
voltage to keep them in the off-state (the driver is blocked) and the fault is transmitted to both outputs SO1
and SO2 until the fault disappears.
In case of a secondary-side supply undervoltage, the corresponding power semiconductor is driven with a
negative gate voltage to keep it in the off-state (the channel is blocked) and a fault condition is transmitted to
the corresponding SOx output. The SOx output is automatically reset (returning to a high impedance state)
after the blocking time.
IGBT and MOSFET operation mode
The driver features two operation modes:
• The first mode is the default IGBT setup with both a positive (regulated) turn-on voltage of 15V
(typical) and a second (non-regulated) turn-off voltage (see Fig. 6).
• The second mode has been specifically designed for ultra-fast MOSFET switching. It incorporates a
single turn-on voltage only. The turn-off voltage is set to 0V. This MOSFET mode is activated by
connecting the secondary-side terminals COMx and VEx. If 2SC0435T drivers are to be used in the
MOSFET mode, please consult CONCEPT’s technical support service.
Page 12 INTELLIGENT POWER ELECTRONICS
Page 13
2SC0435T
V
V
Target
VCE monitoring / short-circuit protection
Each channel of the 2SC0435T driver is equipped
Driver
Input
oltage
Gate
oltage
Collector/Drain
Voltage
+3.3...15V
0V
+15V
0V
+Vdc
with a V
external circuitry is shown in Fig. 6. A resistor
(R
thx
for defining the turn-off threshold. The value of
the current through R
recommended to choose threshold levels of about
10V (R
driver will safely protect the IGBT against shortcircuit, but not necessarily against overcurrent.
Overcurrent protection has a lower timing priority
and is recommended to be realized within the
host controller.
In order to ensure that the 2SC0435T can be
applied as universally as possible, the response
time capacitor C
but must be connected externally.
monitoring circuit. The recommended
CE
in Fig. 6) is used as the reference element
is 150μA (typical). It is
thx
values around 68kΩ). In this case the
thx
is not integrated in the driver,
ax
Vthx
During the response time, the V
monitoring
CE
circuit is inactive. The response time is the time
0V
that elapses after turn-on of the power
semiconductor until the collector/drain voltage is
measured (see Fig. 7).
Response time
Fig. 7 Turn-on characteristic of an IGBT or
MOSFET
Both IGBT collector-emitter voltages are
measured individually. V
is checked after the
CE
response time at turn-on to detect a short circuit
or overcurrent. If the measured V
at the end of
CE
the response time is higher than the programmed
threshold V
, the driver detects a short circuit or overcurrent. The driver then switches off the corresponding
thx
power semiconductor. The fault status is immediately transferred to the corresponding SOx output of the
affected channel. The power semiconductor is kept in off state (non-conducting) and the fault is shown at pin
SOx as long as the blocking time T
The blocking time T
of the V
monitoring circuit outside the response time span.
CE
is applied independently to each channel. TB starts as soon as VCE exceeds the threshold
B
The value of the response time capacitors C
desired response time (R
=1.8MΩ, DC-link voltage V
vcex
is active.
B
can be determined with the following table in order to set the
ax
>550V):
DC-LINK
IGBT-Driver.comPage 13
Page 14
2SC0435T
Description and Application Manual
Cax [pF] R
0 43 / 6.45 1.2
15 43 / 6.45 3.2
22 43 / 6.45 4.2
33 43 / 6.45 5.8
47 43 / 6.45 7.8
0 68 / 10.2 1.5
15 68 / 10.2 4.9
22 68 / 10.2 6.5
33 68 / 10.2 8.9
47 68 / 10.2 12.2
Table 1 Typical response time in function of the capacitance Cax and the resistance R
As the parasitic capacitances on the host PCB may influence the response time it is recommended to measure
it in the final design. It is important to define a response time which is smaller than the max. allowed shortcircuit duration of the used power semiconductor.
Note that the response time increases at DC-link voltage values lower than 550V and/or higher threshold
voltage values V
[kΩ]/V
thx
. The response time will decrease at lower threshold voltage values.
thx
[V] Response time [μs]
thx
thx
Parallel connection of 2SC0435T
If parallel connection of 2SC0435T drivers is required, please consult CONCEPT’s technical support service.
3-level or multilevel topologies
If 2SC0435T drivers are to be used in 3-level or multilevel topologies, please consult CONCEPT’s technical
support service.
Desaturation protection with diode network
2SC0435T drivers are equipped with a desaturation protection function with a resistor network (see
sense (VCEx)
CONCEPT’s technical support service.
on page 10). If you require desaturation protection with collector sense diodes, please consult
“Collector
Bibliography
/1/ “Smart Power Chip Tuning”, Bodo’s Power Systems, May 2007
/2/ “Description and Application Manual for SCALE Drivers”, CONCEPT
/3/ Data sheet SCALE-2 driver core 2SC0435T, CONCEPT
Note: These papers are available on the Internet at www.IGBT-Driver.com/go/papers
Page 14 INTELLIGENT POWER ELECTRONICS
Page 15
2SC0435T
Target
The Information Source: SCALE-2 Driver Data Sheets
CONCEPT offers the widest selection of gate drivers for power MOSFETs and IGBTs for almost any application
requirements. The largest website on gate-drive circuitry anywhere contains all data sheets, application notes
and manuals, technical information and support sections: www.IGBT-Driver.com
Quite Special: Customized SCALE-2 Drivers
If you need an IGBT driver that is not included in the delivery range, please don’t hesitate to contact CONCEPT
or your CONCEPT sales partner.
CONCEPT has more than 20 years experience in the development and manufacture of intelligent gate drivers
for power MOSFETs and IGBTs and has already implemented a large number of customized solutions.
Technical Support
CONCEPT provides expert help with your questions and problems:
www.IGBT-Driver.com/go/support
Quality
The obligation to high quality is one of the central features laid down in the mission statement of CT-Concept
Technologie AG. The quality management system covers all stages of product development and production up
to delivery. The drivers of the SCALE-2 series are manufactured to the ISO9001:2000 quality standard.
Legal Disclaimer
This data sheet specifies devices but cannot promise to deliver any specific characteristics. No warranty or
guarantee is given – either expressly or implicitly – regarding delivery, performance or suitability.
CT-Concept Technologie AG reserves the right to make modifications to its technical data and product
specifications at any time without prior notice. The general terms and conditions of delivery of CT-Concept
Technologie AG apply.
IGBT-Driver.comPage 15
Page 16
2SC0435T
Description and Application Manual
Ordering Information
The general terms and conditions of delivery of CT-Concept Technologie AG apply.
Type Designation Description
2SC0435T2A0-17 Dual-channel SCALE-2 driver core
Product home page: www.IGBT-Driver.com/go/2SC0435T
Refer to www.IGBT-Driver.com/go/nomenclature
for information on driver nomenclature
Information about Other Products
For other driver cores:
Direct link: www.IGBT-Driver.com/go/cores
For other drivers, product documentation, evaluation systems and application support
Please click onto: www.IGBT-Driver.com
Manufacturer
CT-Concept Technologie AG
Intelligent Power Electronics
Renferstrasse 15
CH-2504 Biel-Bienne
Switzerland