COMST BTX18-500, BTX18-400, BTX18-300, BTX18-200, BTX18-100 Datasheet

BTX18-100/BTX18-200/BTX18-300
BTX18-400/BTX18-500

SILICON THYRISTORS

The BTX18 series is a range of p-gate reverse blocking thyristors, in a

TO-39 metal enveloppe, intended for use in general low power

applications up to a A average on-state current.

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Anode to Cathode - Ratings

Voltage 1)

Symbol Ratings

V

R

V

RWM

V

RRM

V

RSM

V

DWM

V

D

V

DRM

V

DSM

Currents

Continuous Reverse Voltage 100 200
Crest Working Reverse Voltage 100 200

Repetitive Peak Reverse Voltage
(δ = 0.01 ; f=50Hz)
Non-repetitive peak reverse voltage
(t<10ms)

Crest Working off-state Voltage 100 200
Continuous off-state Voltage 100 200

Repetitive peak off-state voltage
(δ = 0.01 ; f=50Hz)
Non-repetitive peak off-state voltage
(t<10ms)

Symbol Ratings

Average on-state current

I

T(AV)

I

T

I

T(RMS)

(averaged over any 20
ms period)

On-state Current (D.C.)
T

=100°C

CASE

RMS on-state Current

T

CASE

T

=60°C, in

AMB

free air

=105°C

BTX18-

100

BTX18-

120 240
120 240

120 240
120 240

BTX18-

100

BTX18-

200

BTX18-

300

BTX18-

400

BTX18-

300 400 500 V
300 400 500 V

350 500 600 V
350 500 600 V

300 400 500 V
300 400 500 V

350 500 600 V²)
350 500 600 V²)

200

BTX18-

300

BTX18-

400

BTX18-

Max : 1.0 A

Max : 250 mA

Max : 1.6 A
Max : 1.6 A

500

500

COMSET SEMICONDUCTORS 1/4

BTX18-100/BTX18-200/BTX18-300
BTX18-400/BTX18-500

Symbol Ratings

I

TRM

I

TSM

T
T

J
stg

Repetitive Peak on-state Current
Non-repetitive peak on-state current

t=10ms ; T

=125°C prior to surge

J

Junction Temperature
Storage Temperature

BTX18-

100

BTX18-

200

BTX18-

Max : 10 A

Max : 125°C

-55 to +125°C

300

BTX18-

400

BTX18-

500

10 A V

1) These ratings apply for zero or negative bias on the gate with respect to the cathode, and when a
resistor R<1 kΩ is connected between gate and cathode

2) The device is not suitable for operation in the forward breakover mode.

Gate to Cathode - Ratings

With 1

V
V

resistor between gate and cathode

ΩΩΩΩ

Symbol Ratings

FGM

RGM

Forward Peak Voltage
Reverse Peak Voltage

BTX18

-100

BTX18

-200

BTX18

-300

Max : 10 V

Max : 5 V

BTX18

-400

BTX18

-500

°C

V
V

I

FGM

P
P

G(AV)

GM

Forward Peak Current
Average Power Dissipation (averaged over

any 20 ms period)
Peak Power Dissipation

Temperatures

Symbol Ratings

R
R
Z

th j-c

th j-a

th j-c

From Junction to Case 10 °C/W

From Junction to Ambient 200 °C/W
Transient Thermal Resistance (t=10 ms) 2.5 °C/W

Anode to Cathode - Characteristics

Symbol Ratings

V

T

On State Voltage
I

=1.0 A, Tj=25°C

T

Max : 0.2

Max : 0.05

Max : 0.5

BTX18

-100

BTX18

-100

< 1.5 1.5 1.5 1.5 1.5 V

BTX18

-200

BTX18

-200

BTX18

-300

BTX18

-300

BTX18

-400

BTX18

-400

BTX18

-500

BTX18

-500

W
W

A

1

)

COMSET SEMICONDUCTORS 2/4