COMST BDY58, BDY57 Datasheet
BDY57 – BDY58
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LF Large Signal Power Amplification
High Current Fast Switching
A
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
V
V
V
I
I
C
B
CEO
CBO
EBO
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
80
125
120
160
10 V
25
6
V
V
A
A
P
TOT
T
J
T
S
Power Dissipation @ TC = 25°
Junction Temperature
Storage Temperature
BDY57
BDY58
BDY57
BDY58
175 Watts
-65 to +200 °C
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
R
thJ-C
Thermal Resistance, Junction to Case
BDY57
BDY58
1°C/W
COMSET SEMICONDUCTORS 1/3
BDY57 – BDY58
ELECT RICAL CHARACTE RISTI CS
TC=25°C unless otherwise noted
Symbol Ratings
V
CEO(SUS)
V
CE(SAT)
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CER
Collector-Emitter
Breakdown Voltage (*)
Collector-Emitter saturation
Voltage (*)
Collector-Base Breakdown
Voltage (*)
Emitter-Base Breakdown
Voltage (*)
Collector-Base Cutoff
Current
Collector-Emitter Cutoff
Current
Test Condition(s)
IC=100 mA, IB=0
IC=10 A, IB=1.0 A
IC=5.0mA, IE=0
IE=5.0 A, IC=0
VCB=120 V
IE=0 V
VCE=80 V
Ω
=10
R
BE
T
=100°C
CASE
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
Min Typ Mx Unit
80 - -
125 - -
-0.51.4V
120 - -
160 - -
-0.51.4V
1.0
-0.5
0.5
--10mA
V
V
mA
I
EBO
h
21E
f
T
td + t
=-
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
Emitter-Base Cutoff Current
Static Forward Current
transfer ratio (*)
Transition Frequency
r
Turn-on time
VEB=10 V
=0 V
I
C
VCE=4 V, IC=10 A
VCE=4 V, IC=20 A
VCE=4 V, IC=10 A, T
30°C
VCE=15 V, IC=1.0 A, f=10
MHz
IC=15 A, IB=1.5 A
CASE
-
0.25 0.5 mA
-
20 - 60
-15-
V
10 - -
10 30 - MHz
-0.251
µ
s
COMSET SEMICONDUCTORS 2/3
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