COMST BDY56, BDY55 Datasheet
BDY55 – BDY56
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LF Large Signal Power Amplification
High Current Fast Switching
A
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
V
V
V
I
I
C
B
CEO
CBO
EBO
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
60
120
100
150
7V
15
7
V
V
A
A
P
TOT
T
J
T
S
Power Dissipation
Junction Temperature
Storage Temperature
@ T
= 25°
C
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
117 Watts
200 °C
65 to +200 °C
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
R
thJ-C
Thermal Resistance, Junction to Case
COMSET SEMICONDUCTORS 1/3
BDY55
BDY56
1.5 °C/W
BDY55 – BDY56
ELECT RICAL CHARACTE RISTI CS
TC=25°C unless otherwise noted
Symbol Ratings
V
CEO(SUS)
I
CEO
I
EBO
I
CEX
V
CE(SAT)
V
BE
h
21E
Collector-Emitter
Breakdown Voltage (*)
Collector-Emitter Cutoff
Current
Emitter-Base Cutoff Current
Collector-Emitter Cutoff
Current
Collector-Emitter saturation
Voltage (*)
Base-Emitter Voltage (*)
Static Forward Current
transfer ratio (*)
Test Condition(s)
IC=200 mA, IB=0
VCE=30 V
VCE=60 V
VEB=7 V
VCE=100 V
=-1.5 V
V
BE
VCE=100 V
=-1.5 V
V
BE
=150°C
T
CASE
VCE=150 V
=-1.5 V
V
BE
VCE=150 V
VBE=-1.5 V
=150°C
T
CASE
IC=4.0 A, IB=0.4 A
IC=10 A, IB=3.3 A
IC=4.0 A, VCE=4.0 V
VCE=4 V, IC=4 A
VCE=4 V, IC=10 A
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
Min Typ Mx Unit
60 - -
120 - -
--0.7
--0.5
--5.0
--3.0
--5.0
--30
--3.0
--30
--1.1
--2.5
--1.8V
20 - 70
10
V
mA
mA
mA
V
V
f
T
Transition Frequency
VCE=4.0 V, IC=1.0 A, f=10
MHz
BDY55
BDY56
10 - - MHz
COMSET SEMICONDUCTORS 2/3