COMST BDY54, BDY53 Datasheet
.
BDY53 – BDY54
NPN SILICON TRANSISTORS, DIFFUSED MESA
LF Large Signal Power Amplification
High Current Fast Switching
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
V
V
V
I
I
P
T
T
C
B
CEO
CBO
EBO
TOT
J
Stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation @ TC = 25°
Junction Temperature
Storage Temperature
BDY53
BDY54
BDY53
BDY54
BDY53
BDY54
BDY53
BDY54
BDY53
BDY54
BDY53
BDY54
BDY53
BDY54
BDY53
BDY54
60
120
100
180
V
V
7V
12
5
A
A
60 Watts
200 °C
-65 to +200 °C
COMSET SEMICONDUCTORS 1/3
BDY53 – BDY54
ELECT RICAL CHARACTE RISTI CS
TC=25°C unless otherwise noted
Symbol Ratings
V
CEO(SUS)
I
EBO
I
CEX
V
CE(SAT)
V
BE(SAT)
h
21E
Collector-Emitter
Breakdown Voltage (*)
Emitter-Base Cutoff Current
Collector-Emitter Cutoff
Current
Collector-Emitter saturation
Voltage (*)
Base-Emitter Voltage (*)
Static Forward Current
transfer ratio (*)
Test Condition(s)
IC=100 mA, IB=0
VEB=7 V
VCE=100 V
=-1.5 V
V
BE
=150°C
T
CASE
VCE=150 V
=-1.5 V
V
BE
=150°C
T
CASE
IC=4.0 A, IB=0.4 A
IC=7.0 A, IB=1.4 A
IC=4.0 A, IB=0.4 A
IC=7.0 A, IB=1.4 A
VCE=1.5 V, IC=2 A
BDY53
BDY54
BDY53
BDY54
BDY53
BDY54
BDY53
BDY54
BDY53
BDY54
BDY53
BDY54
BDY53
BDY54
BDY53
BDY54
Min Typ Mx Unit
60 - -
120 - -
--3.0mA
-15 mA
--
--1.1
--2.2
--2
--2.5
20
-60V
V
V
V
f
T
td + t
ts + t
r
f
Transition Frequency
Turn-on time
Turn-off time
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
VCE=4.0 V, IC=0.5 A, f=10
MHz
IC=5 A, IB=1 A
IC=5 A,
=1 A,
I
B1
=-0.5 A
I
B2
BDY53
BDY54
BDY53
BDY54
BDY53
BDY54
20 - - MHz
-0.3-
-1.8-
µs
µs
COMSET SEMICONDUCTORS 2/3