COMST BDX67C, BDX67B, BDX67A, BDX67 Datasheet
BDX67, A, B, C
NNPPNN SSIILLIICCOONN DDAARRLLIINNGGTTOONNS
High current power darlingtons designed for power amplification and
switching applications.
S
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
V
V
V
I
I
C
B
CEO
CBO
EBO
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
I
C(RMS)
I
CM
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
60
80
100
120
80
100
120
140
5.0 V
16
20
0.25
V
V
A
A
P
T
T
J
T
S
Power Dissipation @ TC = 25°
Junction Temperature
Storage Temperature
BDX67, A, B, C
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
COMSET SEMICONDUCTORS 1/4
150
-55 to +200 °C
Watts
W/°C
BDX67, A, B, C
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
BDX67
R
thJ-C
Thermal Resistance, Junction to Case
ELECT RICAL CHARACTE RISTI CS
TC=25°C unless otherwise noted
BDX67A
BDX67B
BDX67C
1.17 °C/W
Symbol Ratings
V
CEO(SUS)
I
CEO
I
EBO
I
CBO
Collector-Emitter
Breakdown Voltage (*)
Collector Cutoff Current
Emitter Cutoff Current
Collector-Base Cutoff
Current
Test Condition(s)
IC=0.1 A, L=25mH
VCE=30 V
VCE=40 V
VCE=50 V
VCE=60 V
VBE=5 V
T
=25°C, VCB=40 V
CASE
T
=150°C
CASE
T
=25°C, VCB=50 V
CASE
T
=150°C
CASE
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
BDX67B
BDX67C
BDX67
BDX67A
Min Typ Mx Unit
60 - 80 - -
V
100 - 120 - -
--
-3mA
--
--
--5.0mA
--1
--5
mA
--1
--5
COMSET SEMICONDUCTORS 2/4
Loading...