COMST BDX66B, BDX66A, BDX66, BDX66C Datasheet
BDX 66, A, B, C
High current power darlingtons designed for power amplification and
switching applications.
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
V
V
V
I
I
C
B
CEO
CBO
EBO
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
I
C(RMS)
I
CM
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
BDX66B
BDX66C
-60
-80
-100
-120
-60
-80
-100
-120
-5.0 V
-16
-20
-0.25
V
V
A
A
BDX66
P
T
T
J
T
S
Power Dissipation @ TC = 25°
Junction Temperature
Storage Temperature
COMSET SEMICONDUCTORS 1/4
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
BDX66B
BDX66C
150
-55 to +200 °C
Watts
W/°C
BDX 66, A, B, C
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
BDX66
R
thJ-C
Thermal Resistance, Junction to Case
ELECT RICAL CHARACTE RISTI CS
TC=25°C unless otherwise noted
BDX66A
BDX66B
BDX66C
1.17 °C/W
Symbol Ratings
V
CEO(SUS)
I
CEO
Collector-Emitter
Breakdown Voltage (*)
Collector Cutoff Current
Test Condition(s)
IC=-0.1 A, L=25mH
VCE=-30 V
VCE=-40 V
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
Min Typ Mx Unit
-60 - -
-80 - V
-100 - -
-120 - -
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-3 mA
VCE=-50 V
VCE=-60 V
COMSET SEMICONDUCTORS 2/4
BDX66B
BDX66C
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