COMST BDX65C, BDX65B, BDX65A, BDX65 Datasheet

BDX 65, A, B, C

NPN SILICON DARLINGTONS

General purpose darlingtons designed for power amplifier and switching

applications.

ABSOLUTE MAXIMUM RATINGS

Symbol Ratings Value Unit

BDX65

V

CEO

V

CEV

V

EBO

I

C

I

B

Collector-Emitter Voltage

Collector-EmitterVoltage VBE=-1.5 V

Emitter-Base Voltage

I

C(RMS)

Collector Current

I

CM

Base Current

BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65

BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C

BDX65
BDX65A
BDX65B
BDX65C

60

80
100
120

80
100
120
120

5.0 V

12

16

0.2

V

V

A

A

BDX65

P

T

T

J

T

S

Power Dissipation @ TC = 25°

Junction Temperature

Storage Temperature

COMSET SEMICONDUCTORS 1/4

BDX65A
BDX65B
BDX65C

BDX65
BDX65A
BDX65B
BDX65C

117

-55 to +200 °C

Watts

W/°C

BDX 65, A, B, C

THERMAL CHARACTERISTICS

Symbol Ratings Value Unit

BDX65

R

thJ-C

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTIC S

TC=25°C unless otherwise noted

BDX65A
BDX65B
BDX65C

1.5 °C/W

Symbol Ratings

V

CEO(SUS)

I

CEO

Collector-Emitter
Breakdown Voltage (*)

Collector Cutoff Current

Test Condition(s)

IC=0.1 A, IB=0, L=25mH

VCE=30 V

VCE=40 V

BDX65

BDX65A

BDX65B

BDX65C

BDX65

BDX65A

Min Typ Mx Unit

60 - -

80 - -

V

100 - -

120 - -

--

-­1mA

VCE=50 V

VCE=60 V

COMSET SEMICONDUCTORS 2/4

BDX65B

BDX65C

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