
BDX 63, A, B, C
NNPPNN SSIILLIICCOONN DDAARRLLIINNGGTTOONNS
General purpose darlingtons designed for power amplifier and switching
applications.
S
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
BDX63
V
CEO
V
CEV
V
EBO
I
C
I
B
Collector-Emitter Voltage
Collector-EmitterVoltage VBE=-1.5 V
Emitter-Base Voltage
I
C(RMS)
Collector Current
I
CM
Base Current
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
60
80
100
120
60
80
100
120
5.0 V
8
12
0.15
V
V
A
A
BDX63
P
T
T
J
T
S
Power Dissipation @ TC = 25°
Junction Temperature
Storage Temperature
COMSET SEMICONDUCTORS 1/4
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
90
-55 to +200 °C
Watts
W/°C

BDX 63, A, B, C
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
BDX63
R
thJ-C
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTIC S
TC=25°C unless otherwise noted
BDX63A
BDX63B
BDX63C
1.94 °C/W
Symbol Ratings
V
CEO(SUS)
I
CEO
Collector-Emitter
Breakdown Voltage (*)
Collector Cutoff Current
Test Condition(s)
IC=0.1 A, IB=0, L=25mH
VCE=30 V
VCE=40 V
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
Min Typ Mx Unit
60 - -
80 - -
V
100 - -
120 - -
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0.5 mA
VCE=50 V
VCE=60 V
COMSET SEMICONDUCTORS 2/4
BDX63B
BDX63C
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