COMST BDX62C, BDX62B, BDX62A, BDX62 Datasheet
BDX 62, A, B, C
PNP SILICON DARLINGTONS
General purpose darlingtons designed for power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
BDX62
V
CEO
V
CEV
V
EBO
I
C
I
B
Collector-Emitter Voltage
Collector-EmitterVoltage VBE=-1.5 V
Emitter-Base Voltage
I
C(RMS)
Collector Current
I
CM
Base Current
BDX62A
BDX62B
BDX62C
BDX62
BDX62A
BDX62B
BDX62C
BDX62
BDX62A
BDX62B
BDX62C
BDX62
BDX62A
BDX62B
BDX62C
BDX62
BDX62A
BDX62B
BDX62C
BDX62
BDX62A
BDX62B
BDX62C
-60
-80
-100
-120
-60
-80
-100
-120
-5.0 V
-8
-12
-0.15
V
V
A
A
BDX62
P
T
Power Dissipation @ TC = 25°
COMSET SEMICONDUCTORS 1/5
BDX62A
BDX62B
BDX62C
90
Watts
W/°C
BDX 62, A, B, C
Symbol Ratings Value Unit
T
J
T
S
Junction Temperature
Storage Temperature
BDX62
BDX62A
BDX62B
BDX62C
-55 to +200 °C
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
BDX62
R
thJ-C
Thermal Resistance, Junction to Case
BDX62A
BDX62B
BDX62C
1.94 °C/W
ELECTRICAL CHARACTERISTIC S
TC=25°C unless otherwise noted
Symbol Ratings
Test Condition(s)
Min Typ Mx Unit
V
CEO(SUS)
Collector-Emitter
Breakdown Voltage (*)
IC=-0.1 A, IB=0, L=25mH
BDX62
BDX62A
BDX62B
BDX62C
-60 - -
-80 - V
-100 - -
-120 - -
COMSET SEMICONDUCTORS 2/5
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