NPN BDX33 – BDX33A – BDX33B – BDX33C
PNP BDX34 – BDX34A – BDX34B – BDX34C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power
transistors in monolithic Darlington configuration and are mounted in Jedec TO-
220 plastic package.
They are intented for use in power linear and switching applications.
The complementary PNP types are the BDX34A, BDX34B and BDX34C
respectively.
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
BDX33
BDX34
BDX33A
V
CEO
V
CEV
Collector-Emitter Voltage
Collector-EmitterVoltage IB=0
BDX34A
BDX33B
BDX34B
BDX33C
BDX34C
BDX33
BDX34
BDX33A
BDX34A
BDX33B
BDX34B
BDX33C
BDX34C
45
60
80
100
45
60
80
100
V
V
COMSET SEMICONDUCTORS 1/6
NPN BDX33 – BDX33A – BDX33B – BDX33C
PNP BDX34 – BDX34A – BDX34B – BDX34C
Symbol Ratings Value Unit
BDX33
BDX33A
BDX33B
I
C(RMS)
I
C
I
B
P
T
T
J
T
S
Collector Current
I
CM
Base Current
Power Dissipation @ TC = 25°
Junction Temperature
Storage Temperature
BDX33C
BDX34
BDX34A
BDX34B
BDX34C
BDX33
BDX33A
BDX33B
BDX33C
BDX34
BDX34A
BDX34B
BDX34C
BDX33
BDX33A
BDX33B
BDX33C
BDX34
BDX34A
BDX34B
BDX34C
BDX33
BDX33A
BDX33B
BDX33C
BDX34
BDX34A
BDX34B
BDX34C
BDX33
BDX33A
BDX33B
BDX33C
BDX34
BDX34A
BDX34B
BDX34C
10
15
0.25
70
-65 to +150 °C
A
A
Watts
W/°C
COMSET SEMICONDUCTORS 2/6
NPN BDX33 – BDX33A – BDX33B – BDX33C
PNP BDX34 – BDX34A – BDX34B – BDX34C
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
BDX33
BDX33A
BDX33B
R
thJ-C
Thermal Resistance, Junction to Case
ELECT RICAL CHARACTERISTICS
TC=25°C unless otherwise noted
BDX33C
BDX34
BDX34A
BDX34B
BDX34C
1.78 °C/W
Symbol Ratings
V
CEO(SUS)
V
CER(SUS)
Collector-Emitter
Breakdown Voltage (*)
Collector-Emitter Sustaining
Voltage (*)
Test Condition(s)
IC=100 mA
IB=100 mA, RBE=100
Min Typ Mx Unit
BDX33
BDX34
BDX33A
BDX34A
BDX33B
BDX34B
BDX33C
BDX34C
BDX33
BDX34
BDX33A
Ω
BDX34A
BDX33B
BDX34B
BDX33C
BDX34C
45 - -
60 - -
V
80 - -
100 - -
45 - -
60 - -
V
80 - -
100 - -
COMSET SEMICONDUCTORS 3/6
NPN BDX33 – BDX33A – BDX33B – BDX33C
PNP BDX34 – BDX34A – BDX34B – BDX34C
Symbol Ratings
V
CEV(SUS)
I
CEO
I
EBO
I
CBO
Collector-Emitter Sustaining
Voltage (*)
Collector Cutoff
Current
Emitter Cutoff Current
Collector-Base Cutoff
Current
Test Condition(s)
IC=100 mA, VBE=-1.5 V
VCB=22V
VCB=30V
=25°C
VCB=40V
CASE
T
VCB=50V
VCB=22V
VCB=30V
=100°C
VCB=40V
CASE
T
VCB=50V
VBE=-5 V
V
=-45 V
CBO
V
=-60 V
CBO
V
=-80 V
CBO
=25°C
V
=100 V
CBO
CASE
T
BDX33
BDX34
BDX33A
BDX34A
BDX33B
BDX34B
BDX33C
BDX34C
BDX33
BDX34
BDX33A
BDX34A
BDX33B
BDX34B
BDX33C
BDX34C
BDX33
BDX34
BDX33A
BDX34A
BDX33B
BDX34B
BDX33C
BDX34C
BDX33
BDX33A
BDX33B
BDX33C
BDX34
BDX34A
BDX34B
BDX34C
BDX33
BDX34
BDX33A
BDX34A
BDX33B
BDX34B
BDX33C
BDX34C
Min Typ Mx Unit
45 - -
60 - -
V
80 - -
100 - -
--
--
0.5
--
-mA
--
--
10
--
--
--5.0mA
--
-mA
--
--
0.2
COMSET SEMICONDUCTORS 4/6
NPN BDX33 – BDX33A – BDX33B – BDX33C
PNP BDX34 – BDX34A – BDX34B – BDX34C
Symbol Ratings
I
CBO
V
CE(SAT)
V
F
V
BE
h
FE
Collector-Base Cutoff
Current
Collector-Emitter saturation
Voltage (*)
Forward Voltage (pulse
method)
Base-Emitter Voltage (*)
DC Current Gain (*)
Test Condition(s)
V
=45 V
CBO
V
=60 V
CBO
=100°C
V
=80 V
CBO
CASE
T
V
=100 V
CBO
IC=4.0 A, IB=8.0 mA
IC=3.0 A, IB=6.0 mA
IF=8 A
IC=4.0 A, VCE=3.0V
IC=3.0 A, VCE=-3V
VCE=3.0 V, IC=4.0 A
VCE=3.0 V, IC=3.0 A
BDX33
BDX34
BDX33A
BDX34A
BDX33B
BDX34B
BDX33C
BDX34C
BDX33
BDX33A
BDX34
BDX34A
BDX33B
BDX33C
BDX34B
BDX34C
BDX33
BDX33A
BDX33B
BDX33C
BDX34
BDX34A
BDX34B
BDX34C
BDX33
BDX33A
BDX34
BDX34A
BDX33B
BDX33C
BDX34B
BDX34C
BDX33
BDX33A
BDX34
BDX34A
BDX33B
BDX33C
BDX34B
BDX34C
Min Typ Mx Unit
--
--
5mA
--
--
--2.5
V
--2.5
-
-
--2.5
--2.5
750
750
4.0 V
V
--
-
--
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
(1) collector-Emitter voltage limited et V
CEci
= V
COMSET SEMICONDUCTORS 5/6
rated by an auxiliary circuit
NPN BDX33 – BDX33A – BDX33B – BDX33C
PNP BDX34 – BDX34A – BDX34B – BDX34C
MECHANICAL DATA C ASE TO- 3
DIMENSIONS
mm inches
A 25,51 1,004
B 38,93 1,53
C 30,12 1,18
D 17,25 0,68
E 10,89 0,43
G 11,62 0,46
H 8,54 0,34
L 1,55 0,6
M 19,47 0,77
N 1 0,04
P 4,06 0,16
Pin 1 : Base
Pin 2 : Collector
Case : Emitter
COMSET SEMICONDUCTORS 6/6
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