COMST BDX20 Datasheet
BDX20
PNP SILICON TRANSISTORS EPITAXIAL BASE
LF Large Signal Power Amplification
High Current Fast Switching
Thermal Fatigue Inspection
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
V
V
V
V
I
I
P
T
T
CBO
CEO
CEX
EBO
C
B
TOT
J
S
Collector to Base Voltage
#Collector-Emitter Voltage
Collector-Emitter Voltage VBE=1.5 V
Emitter-Base Voltage
Collector Current – Continuous
Base Current – Continuous
Total Device Dissipation
Junction Temperature
Storage Temperature
-60 V
-140 V
-160 V
-7 V
-10 A
-7 A
117 Watts
200 °C
-65 to
+200
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
R
thJC
Thermal Resistance, Junction to Case
1.5 °C/W
°C
COMSET SEMICONDUCTORS 1/2
BDX20
ELECTRICAL C HARACTERISTICS
TC=25°C unless otherwise noted
Symbol Ratings Test Condition(s) Min Typ Mx Unit
V
CEO(SUS)
V
CEX
I
CEX
I
CBO
I
EBO
h
21E
V
CE(SAT)
V
BE
f
T
Collector-Emitter Sustaining
Voltage (*)
Collector-Emitter
Breakdown Voltage (*)
Collector Cutoff Current
Collector-Base Cutoff
Current
Emitter-Base Cutoff Current VBE=-7.0 V, IC=0 - - -5.0 mA
Static Forward Current
Transfer Ratio (*)
Collector-Emitter Saturation
Voltage (*)
Base-Emitter Voltage (*)
Transition Frequency VCE=-10 V, IC=-1.0 Adc, f=1.0 MHz 4 - - MHz
In accordance with JEDEC Registration Data
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
MECHANICAL DATA CASE TO-3
I
=-200 mA, IB=0 -140 - - V
C
I
=-100 mA, VBE=1.5 V -160 - - V
C
VCE=-140 V, VBE=1.5 V - - -1.0
V
=-140 V, VBE=1.5 V, T
CE
V
=-140 V, IE=0 - - -1.0 mA
CB
=150°C - - -10
CASE
IC=-3.0 A, VCE=-4.0 V 20 - 70
I
=10 A, VCE=-4.0 V - 10 -
C
IC=-3.0 A, IB=-0.3 A - - -1.0
I
=-10 A, IB=-2 A - - -5.0
C
IC=-3.0 Adc, VCE=-4.0 V - -1.7 I
=-10 A, VCE=-4.0 V - -5.7 -
C
mA
-
V
V
DIMENSIONS
mm inches
A 25,51 1,004
B 38,93 1,53
C 30,12 1,18
D 17,25 0,68
E 10,89 0,43
G 11,62 0,46
H 8,54 0,34
L 1,55 0,6
M 19,47 0,77
N 1 0,04
P 4,06 0,16
Pin 1 : Base
Pin 2 : Collector
Case : Emitter
COMSET SEMICONDUCTORS 2/2
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