COMST BDX18N, BDX18 Datasheet
BDX18 – BDX18N
PNP SILICON TRANSISTOR EPITAXIAL BASE
LF Large Signal Power Amplification
High Current Switching
Suitable for :
Series and shunt regulators
High Fidelity Amplifiers
Power-switching circuits
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
V
V
V
V
V
I
I
P
T
T
C
B
CEO
CER
EBO
CBO
CEX
T
J
S
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Emitter Voltage VBE=+1.5 V
Collector Current
Base Current
Power Dissipation @ TC = 25°
Junction Temperature
Storage Temperature
R
=100Ω
BE
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
-60 V
-70
-65
V
-7 V
-100
-70
V
-90
-70
-15
-7
V
A
A
117 Watts
-65 to +200 °C
COMSET SEMICONDUCTORS 1/3
BDX18 – BDX18N
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
R
thJ-C
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol Ratings
V
CEO(SUS)
V
CEX(SUS)
V
CER(SUS)
I
CEX
I
EBO
V
BE
V
CE(SAT)
Collector-Emitter
Breakdown Voltage (*)
Collector-Emitter
Breakdown Voltage (*)
Collector-Emitter
Breakdown Voltage (*)
Collector-Emitter Cutoff
Current
Emitter-Base Cutoff Current
Base-Emitter Voltage (*)
Collector-Emitter Saturation
Voltage
Test Condition(s)
IC=200 mA, IB=0
IC=-100 mA, VBE=1.5 V
IC=-200 mA, RBE=100
VCE=-90 V, VBE=1.5 V
VCE=-60 V, VBE=1.5 V
=150°C
T
CASE
VCE=-70 V, VBE=1.5 V
VCE=-60 V, VBE=1.5 V
T
=150°C
CASE
VEB=-7 V
IC=-4.0 A, VCE=-4.0V
IC=-4.0 A, IB=-0.4V
Ω
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
1.5 °C/W
Min Typ Mx Unit
-60
-60
-90 - -
-70 - -
-70 - -
-65 - -
--V
V
V
---5
-10
---5
mA
---10
---5mA
---1.8V
---1.1V
f
T
Transition Frequency
IC =-1A, VCE=-10 V, f=1
MHz
BDX18
BDX18N
-
4-MHz
COMSET SEMICONDUCTORS 2/3
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