COMST BD652, BD650, BD648, BD646, BD644 Datasheet
BD643/645/647/649/651
SILICON NPN DAELINGTON POWER TRANSISTORS
NPN epitaxial-base transistors in a monolithic Darlington circuit and housed in a
TO-220 enveloppe. They are intended for output stages in audio equipment,
general amplifiers , and analo gue s witc hi ng app lic a tion.
PNP complements are BD644, BD646, BD648, BD650 and BD652
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
V
V
I
I
C
CM
CBO
CEO
Collector-Base Voltage
Collector-EmitterVoltage
Collector Current
Collector Peak Current
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
60
80
100
120
140
45
60
80
100
120
8
12
V
V
A
A
COMSET SEMICONDUCTORS 1/5
BD643/645/647/649/651
Symbol Ratings Value Unit
BD644
BD646
I
B
P
T
T
J Ts
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Base Current
Power Dissipation @ Tmb < 25°
Junction
Storage Temperature
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
150
62.5 Watts
150
-65 to +150
mA
°C
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
BD644
BD646
R
R
thJ-MB
thJ-A
From junction to mounting base
From junction to ambient in free air
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
2K/W
70 K/W
COMSET SEMICONDUCTORS 2/5
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