BD643/645/647/649/651
SILICON NPN DAELINGTON POWER TRANSISTORS
NPN epitaxial-base transistors in a monolithic Darlington circuit and housed in a
TO-220 enveloppe. They are intended for output stages in audio equipment,
general amplifiers , and analo gue s witc hi ng app lic a tion.
PNP complements are BD644, BD646, BD648, BD650 and BD652
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
V
V
I
I
C
CM
CBO
CEO
Collector-Base Voltage
Collector-EmitterVoltage
Collector Current
Collector Peak Current
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
60
80
100
120
140
45
60
80
100
120
8
12
V
V
A
A
COMSET SEMICONDUCTORS 1/5
BD643/645/647/649/651
Symbol Ratings Value Unit
BD644
BD646
I
B
P
T
T
J Ts
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Base Current
Power Dissipation @ Tmb < 25°
Junction
Storage Temperature
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
150
62.5 Watts
150
-65 to +150
mA
°C
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
BD644
BD646
R
R
thJ-MB
thJ-A
From junction to mounting base
From junction to ambient in free air
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
2K/W
70 K/W
COMSET SEMICONDUCTORS 2/5
BD643/645/647/649/651
ELECT RICAL CHARACTE RISTI CS
TC=25°C unless otherwise noted
Symbol Ratings
I
CBO
I
CEO
I
EBO
V
CE(SAT)
V
BE(SAT)
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter saturation
Voltage (*)
Base-Emitter Saturation
Voltage (*)
Test Condition(s)
IE=0,VCB =V
IE=0,VCB =1/2 V
TJ=150°C
IE=0, VCE =1/2 V
VEB=5 V, IC=0
IC=4 A, IB=16 mA
IC=3 A, IB=12 mA
IC=5 A, IB=50 mA
IC=12 A, IB=120 mA
CEO
MAX
CBO
CEO
MAX,
MAX
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
Min Typ Mx Unit
--0.1mA
--1mA
--0.2mA
--5.0mA
--2
---
---
---
---
---
--2
--2
--2
--2
--2.5
--2.5
--2.5
--2.5
--2.5
--3V
V
COMSET SEMICONDUCTORS 3/5
BD643/645/647/649/651
Symbol Ratings Value Unit
BD644
BD646
IC=4 A, VCE=3 V
BD648
BD650
V
BE
Base-Emitter Voltage (*)
BD652
BD644
BD646
IC=3 A, VCE=3 V
BD648
BD650
BD652
BD644
BD646
VCE=3.0 V, IC=0.5 A
BD648
BD650
BD652
BD644
BD646
VCE=3.0 V, IC=4 A
BD648
BD650
h
FE
DC Current Gain (*)
BD652
BD644
BD646
VCE=3.0 V, IC=3 A
BD648
BD650
BD652
BD644
BD646
VCE=3.0 V, IC=8 A
BD648
BD650
BD652
BD644
BD646
VCE=3.0 V, IC=4 A, f=1MHz
BD648
BD650
h
fe
Small Signal Current Gain
BD652
BD644
BD646
VCE=3.0 V, IC=3 A, f=1MHz
BD648
BD650
BD652
--2.5
---
---
---
---
---
--2.5
--2.5
--2.5
--2.5
-
-
-
-
-
750
-
-
-
-
-
1900
-
-
-
-
-
--
--
--
--
--
--
--
750
--
--
--
10
10
10
10
10
-
1800
-
-
-
-
-
-
-
-
-
-
-
-
-
--
--
--
--
--
--
--
--
--
--
V
-
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
COMSET SEMICONDUCTORS 4/5
BD643/645/647/649/651
MECHANICAL DATA CASE TO-220
DIMENSIONS
mm inches
A 9,86 0,39
B 15,73 0,62
C 13,37 0,52
D 6,67 0,26
E 4,44 0,17
F 4,21 0,16
G 2,99 0,11
H 17,21 0,68
L 1,29 0,05
M 3,6 0,14
N 1,36 0,05
P 0,46 0,02
R 2,1 0,08
S 5 0,19
T 2,52 0,098
U 0,79 0,03
Pin 1 : Anode 1
Pin 2 : Anode 2
Pin 3 : Gate
COMSET SEMICONDUCTORS 5/5
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