COMST BD140 Datasheet
BD130
NPN SILICON TRANSISTOR
POWER LINERAR AND SWITCHING APPLICATIONS
The BD130 is a silicon epitaxial-base NPN transistor in JEDEC TO-
3 metal case. It is intended for power switching circuits, series and
shunt regulators, output stages and high fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
V
V
V
I
I
P
T
T
C
B
CEO
CBO
CEX
T
J
S
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Emitter Voltage VBE=-1.5 V
Collector Current 15
Base Current 7
Power Dissipation @ TC = 45°
Junction Temperature
60 V
100 V
100 V
100 Watts
-55 to +200 °C
Storage Temperature
A
A
COMSET SEMICONDUCTORS 1/3
BD130
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
R
thJ-C
Thermal Resistance, Junction to Case
ELECTRICAL CHARACT ERISTICS
TC=25°C unless otherwise noted
Symbol Ratings
V
CEO(BR)
V
CE(SAT)
I
CEX
Collector-Emitter
Breakdown Voltage (*)
Collector-Emitter Saturation
Voltage (*)
Collector-Emitter Cutoff
Current
Test Condition(s)
IC=200 mA, IB=0
IC=4 A, IB=0.4 A
VCE=100 V
=-1.5 V
V
BE
VCE=100 V
=-1.5 V
V
BE
T
=150°C
CASE
1.55 °C/W
Min Typ Mx Unit
60 V
-0.51.1V
--
--30
0.5
mA
I
EBO
V
f
T
BE
Emitter-Base Cutoff Current
Base-Emitter Voltage (*)
Transition Frequency
VEB=7 V
IC=4.0 A, VCE=4.0V
IC=0.1 A, VCE=4 V
COMSET SEMICONDUCTORS 2/3
--5.0mA
- 0.95 1.8 V
1.1 MHz
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