COMST 2N6059, 2N6058, 2N6057, 2N6052, 2N6051 Datasheet
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2
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PPOOWWEERR CCOOMMPPLLEEMMEENNTTAARRY
SSIILLIICCOONN TTRRAANNSSIISSTTOORRS
The 2N6050, 2N6051 and 2N6052 are silicon epitaxialbase PNP transistors in monolithic Darlington
configuration mounted in Jedec TO-3 metal case. They
are inteded for use in power linear and low frequency
switching applications. The complementary NPN types are
2N6057, 2N6058 and 2N6059 respective ly.
9
Y
S
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
2N6050
2N6057
60
V
V
V
CBO
CEO
CEX
Collector-Base Voltage
Collector-EmitterVoltage
Collector-EmitterVoltage
I
=0
E
I
=0
B
V
BE
=-1.5 V
2N6051
2N6058
2N6052
2N6059
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
80
100
60
80
100
60
80
100
V
V
V
COMSET SEMICONDUCTORS 1/4
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2
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V
EBO
I
C
I
CM
I
B
P
T
T
J Ts
9
Emitter-Base Voltage
Collector Current
Collector Peak Current
Base Current
Power Dissipation @ TC < 25°
Junction
Storage Temperature
2N6050
2N6057
I
=0
C
2N6051
2N6058
2N6052
2N6059
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
2N6050
2N6057
2N6051
2N6058
2N6052
2N6059
5.0 V
12
20
0.2
150 Watts
200
-65 to +200
A
A
mA
°C
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
2N6050
2N6057
R
thJ-C
22NN66005500//5511//552
Thermal Resistance, Junction to Case
2
COMSET SEMICONDUCTORS 2/4
2N6051
2N6058
2N6052
2N6059
1.17 °C/W
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