2N3442
2N4347
HHIIGGHH PPOOWWEERR IINNDDUUSSTTRRIIAALL TTRRAANNSSIISSTTOORRS
NPN silicon transistors designed for applications in industrial and commercial equipment including high
fidelity audio amplifiers, series and shunts regulators and power switches.
• Low Collector-Emitter Saturation Voltage –
V
= 1.0 Vdc (Max) @ IC = 2.0 Adc – 2N4347
CE(sat)
• Collector-Emitter Sustaining Voltage-
VCEO(sus) = 120 Vdc (Min) – 2N4347
140 Vdc (Min) – 2N3442
• Excellent Second-Breakdown Capability
S
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
V
CEO
V
CB
V
EB
I
C
I
B
P
D
T
J
T
S
#Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation
Junction Temperature
Storage Temperature
Continuous
Peak
Continuous
Peak
@ TC = 25°
Derate
above 25°
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
120
140
140
160
7.0 Vdc
5.0
10
10
15 (**)
3.0
7.0
8.0
100
117
0.57
0.67
-65 to +200
V
Vdc
Adc
Adc
Watts
W/°C
°C
°C
(**) This data guaranteed in addit ion to JE DEC regis t er ed data .
COMSET SEMICONDUCTORS 1/3
2N3442
2N4347
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
R
thJC
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
2N4347
2N3442
1.75
1.5
°C/W
Symbol Ratings
V
CEO(SUS)
V
CER(SUS)
RBE=100
I
CEO
I
CEX
I
EBO
h
FE
V
CE(SAT)
Collector-Emitter
Sustaining Voltage (1)
Collector-Emitter
Sustaining Voltage
ΩΩΩΩ
Collector-Emitter Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter
saturation Voltage
Test Condition(s)
IC=200 mAdc, IB=0
IC=0.1 Adc
IC=0.2 Adc
VCE=100 Vdc, IB=0
VCE=140 Vdc, IB=0
VCE=125 Vdc, V
VCE=120 Vdc, V
TC = 150°C
VCE=140 Vdc, V
VCE=140 Vdc, V
TC = 150°C
VBE=7.0 Vdc, IC=0
IC=2.0 Adc, VCE=4.0 Vdc
IC=5.0 Adc, VCE=4.0 Vdc
IC=3.0 Adc, VCE=4.0 Vdc
IC=10 Adc, VCE=4.0 Vdc
IC=2.0 Adc, IB=200 mAdc
IC=5.0 Adc, IB=0.63 Adc
IC=3.0 Adc, IB=0.3 Adc
IC=10 Adc, IB=0.2 Adc
EB(off)
EB(off)
EB(off)
EB(off)
=1.5 Vdc
=1.5 Vdc,
=1.5 Vdc
=1.5 Vdc,
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
Min Typ Mx Unit
120 - -
Vdc
140 - 130 - -
V
150 - -
- - 200
mAdc
200
--2.0
10
mAdc
--5.0
--30
--5.0mAdc
15 - 60
10 - 20 - 70
4.0 - -
--1.0
--2.0
--1.0
--5.0
-
Vdc
COMSET SEMICONDUCTORS 2/3
2N3442
2N4347
Symbol Ratings
V
BE(on)
h
fe
f
T
I
s/b
(1) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
= |hfe| * f
f
(2)
T
Base-Emitter Voltage
Small Signal Current Gain
Current Gain – Bandwith
Product (2)
Second Breakdown
Collector Current
test
MECHANICAL DATA CASE TO-3
DIMENSIONS
mm inches
A 25,51 1,004
B 38,93 1,53
C 30,12 1,18
D 17,25 0,68
E 10,89 0,43
G 11,62 0,46
H 8,54 0,34
L 1,55 0,6
M 19,47 0,77
N 1 0,04
P 4,06 0,16
Test Condition(s)
IC=2.0 Adc, VCE=4.0 Vdc
IC=5.0 Adc, VCE=4.0 Vdc
IC=3.0 Adc, VCE=4.0 Vdc
IC=10 Adc, VCE=4.0 Vdc
VCE=4.0 Vdc, IC=0.5 Adc, f=1.0
kHz
VCE=4.0 Vdc, IC=2.0 Adc, f=1.0
kHz
VCE=4.0 Vdc, IC=0.5 Adc, f
50 kHz
VCE=4.0 Vdc, IC=2.0 Adc, f
40 kHz
VCE=67 Vdc, IC=1.5 Adc
VCE=78 Vdc, IC=1.5 Adc
test
test
=
=
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
2N4347
2N3442
Min Typ Mx Unit
--2.0
--3.0
--1.7
--5.7
40 - 12 - 72
200 - -
80 - -
1.0 - -
1.0 - -
Vdc
-
kHz
s
Pin 1 : Base
Pin 2 : Emitter
Case : Collector
Information furnished is believed to be accurate and reliable. However, CS assumes no respons ability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
COMSET SEMICONDUCTORS 3/3
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