COMST 2N2647, 2N2646 Datasheet
2N2646
2N2647
SILICON UNIJONCTION TRANSISTORS
Silicon Planar Un ijunction Transistors have a stru cture resulting in lower saturat ion voltage, peak-point
current and valley current as well as a much higher base-one peak pulse voltage. In addition, these
devices are much faster switches.
The 2N2646 is intend ed for general purpose industrial applications where circuit econom y is of prim ary
importance, and is ide al for use in firing circuits for Silicon Controlled Rectifiers and other applications
where a guaranteed minim um puls e amplitude is require d . T he 2N 2647 is intended f or ap pl ic ati ons where
a low emitter leak age current and a low peak point emitter c urrent (trigger c urrent) are requ ired and also
for triggering high power SCR’s.
MAXIMUM RATINGS (*)
TJ=125°C unless otherwise noted
Symbol Ratings 2N2646 2N2647
V
B1E
V
B2E
I
FRMS
I
EM
P
TOT
T
J
T
STG
Base 1 – Emitter Voltage 30
Base 2 – Emitter Voltage 30
RMS Emitter Current 50
Emitter Peak Current 2
Total Power Dissipation 300
Maximum Junction
Storage Temperature Range
150
-55 to +175
ELECTRICAL CHARACTERISTICS
TJ=25°C unless otherwise noted, RGK=1000Ω
Symbol Ratings
2N2646 – 2N2647
Min Max
V
V
mA
A
mW
°C
I
EO
V
(BR)B1E
Emitter Reverse Current
Base 1 – Emitter Breakdown Voltage
I
=100 µA
E
COMSET SEMICONDUCTORS 1/2
12
µ
30 V
A
2N2646
2N2647
Symbol Ratings
R
ηηηη
V
I
I
* V
BBO
E(SAT)
V
P
DRM
or
V
RSM
Interbase Resistance
V
= 3 V
B1B2
Intrinsic stand-off ratio
V
= 10 V
B1B2
Emitter Saturation Voltage
I
= 50 mA,
E
V
B1B2
Valley Current
V
= 20 V
B1B2
Peak Current
V
= 25 V
B1B2
can be applied for all types on a continuous dc basis without incurring damage.
Information furnished is believed to be accurate and reliable. However, CS assumes no respons ability
for the consequences of use of such information nor for errors that could appear.
Min Max
2N2646
2N2647
= 10 V
2N2646
2N2647
2N2646
2N2647
Data are subject to change without notice.
0.56 0.75
0.68 0.82
2N2646 – 2N2647
4.7 9.1
k
Ω
-
-2.5V
4-
mA
8-
-5
A
-2
µ
COMSET SEMICONDUCTORS 2/2
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