COMST 2N2325, 2N2324, 2N2326, 2N2323, 2N2322 Datasheet
2N2322 thru 2N2326
SILICON THYRISTORS
All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits
MAXIMUM RATINGS (*)
TJ=125°C unless otherwise noted, RGK=1000Ω
Symbol Ratings
V
RSM(REP)
V
RSM(NON-REP)
I
T(RMS)
I
TSM
P
GM
P
G(AV)
I
GM
V
GFM
V
GRM
T
J
T
STG
Peak reverse blocking vo ltag e (1) 25 50
Non-repetitive peak blocking reverse
voltage (t<5.0 ms)
Forward Current RMS (all conduction
angles)
Peak Surge Current
(One-Half Cycle, 60Hz)
No Repetition Until Thermal
Equilibrium is Restored.
Peak Gate Power – Forward 0.1
Average Gate Power – Forward 0.01
Peak Gate Current – Forward 0.1
Peak Gate Voltage – Forward
Peak Gate Voltage – Reverse
Operating Junction Temperature
Range
Storage Temperature Range
2N2322 2N2323 2N2324 2N2325 2N2326
100 150 200 V
40 75
150 225 300 V
1.6
15
6.0 V
6.0 V
-65 to +125
-65 to +150
Amp
Amp
W
W
Amp
°C
ELECT RICAL CHARACTERISTICS
TJ=25°C unless otherwise noted, RGK=1000Ω
COMSET SEMICONDUCTORS 1/2
2N2322 thru 2N2326
Symbol Ratings
V
I
RRM
I
DRM
V
I
GT
V
I
H
DRM
T
GT
Peak Forward Blocking
Voltage (1)
Peak Reverse Blocking Current
(Rated
V
DRM, TJ
Peak Forward Blocking Current
(Rated
V
DRM, TJ
Forward « on » Voltage
I
=1.0 A Peak
T
I
=1.0 A Peak,
T
Gate Trigger Current (2)
Anode Voltage=6.0 Vdc,
Anode Voltage=6.0 Vdc,
T
=-65°C
C
Gate Trigger Voltage
Anode Voltage=6.0 V,
Anode Voltage=6.0 V,
T
=-65°C
C
V
DRM
= Rated,
R
Holding Current
Anode Voltage=6.0 V
Anode Voltage=6.0 V,
Anode Voltage=6.0 V,
=125°C)
=125°C)
T
=85°C
C
=100Ω,
L
R
R
=100Ω
L
R
=100Ω,
L
T
T
=-65°C
C
T
=125°C
C
=100Ω
L
R
=100Ω,
L
=125°C
J
Min :
2N2322 2N2323 2N2324 2N2325 2N2326
25 * 50 * 100 * 150 * 200 * V
Max : 100 *
Max :100 *
Max :1.5
Max : 2.0*
Max : 200
Max : 350 *
Max : 0.8
Max : 1.0 *
Min : 0.1 *
Max : 2.0
Max : 3.0 *
Min : 0.15 *
A
µ
A
µ
A
A
µ
V
mA
* JEDEC Registered Values
V
1)
2)
and
RSM
R
current is not included in measurement.
GK
can be applied for all types on a continuous dc basis without incurring damage.
VDRM
MECHANICAL DATA CASE TO-39
DIMENSIONS
mm inches
A 6,25 0,24
B 13,59 0,53
C 9,24 0,36
D 8,24 0,32
E 0,78 0,03
F 1,05 0,041
G 0,42 0,165
H 45°
L5,10,2
Pin 1 : Cathode
Pin 2 : Gate
Pin 3 : Anode
Information furnished is believed to be accurate and reliable. However, CS assumes no respons ability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
COMSET SEMICONDUCTORS 2/2
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