COMST BDY28, BDY27, BDY26, 185T2, 184T2 Datasheet
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BDY26, 183 T2
BDY27, 184 T2
BDY28, 185 T2
NPN SILICON TRANSISTORS, DIFFUSED MESA
LF Large Signal Power Amplification
ABSOLUTE MAXIMUM RATINGS
High Current Fast Switching
Symbol Ratings Value Unit
V
V
V
I
I
P
T
T
C
B
CEO
CBO
EBO
TOT
J
Stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation @ TC = 25°
Junction Temperature
Storage Temperature
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
180
200
250
300
400
500
10 V
6
3
87.5 Watts
200
-65 to +200
V
V
A
A
°C
COMSET SEMICONDUCTORS 1/4
BDY26, 183 T2
BDY27, 184 T2
BDY28, 185 T2
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
BDY26, 183T2
R
thJ-C
Thermal Resistance, Junction to Case
ELECT RICAL CHARACTE RISTI CS
TC=25°C unless otherwise noted
BDY27, 184T2
BDY28, 185T2
2°C/W
Symbol Ratings
V
CEO(BR)
V
(BR)CBO
I
CEO
I
EBO
I
CES
Collector-Emitter
Breakdown Voltage (*)
Collector-Base Breakdown
Voltage (*)
Collector-Emitter Cutoff
Current
Emitter-Base Cutoff Current
Collector-Emitter Cutoff
Current
Test Condition(s)
IC=50 mA, IB=0
IC=3 mA
VCE=180 V
VCE=200 V
VCE=250 V
VEB=10 V
VCE=250 V
=0 V
V
BE
VCE=300 V
=0 V
V
BE
VCE=400 V
=0 V
V
BE
BDY26, 183T2
BDY27, 184T2
BDY28A, 185T2A
BDY28B, 185T2B
BDY28C, 185T2C
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
BDY26
BDY27
BDY28
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
Min Typ Mx Unit
180 - 200 - 250 - 250 - 220 - -
300 - -
-
400
500
-
-
-
--
--
1.0 mA
--
--1.0mA
--
--
1.0 mA
--
V
V
COMSET SEMICONDUCTORS 2/4
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