COMST BDY23, BDY25, 182T2, 181T2, 180T2 Datasheet
BDY23, 180 T2
BDY24, 181 T2
BDY25, 182 T2
NPN SILICON TRANSISTORS, DIFFUSED MESA
LF Large Signal Power Amplification
High Current Fast Switching
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
V
V
V
I
I
P
T
T
C
B
CEO
CBO
EBO
TOT
J
Stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
@ T
= 25°
C
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 181T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
60
90
140
60
100
200
10 V
6
3
87.5 Watts
200
-65 to +200
V
V
A
A
°C
COMSET SEMICONDUCTORS 1/4
BDY23, 180 T2
BDY24, 181 T2
BDY25, 182 T2
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
BDY23, 180T2
R
thJ-C
Thermal Resistance, Junction to Case
ELECT RICAL CHARACTE RISTI CS
TC=25°C unless otherwise noted
BDY24, 181T2
BDY25, 182T2
2°C/W
Symbol Ratings
V
CEO(BR)
V
(BR)CBO
I
CEO
I
EBO
I
CES
Collector-Emitter
Breakdown Voltage (*)
Collector-Base Breakdown
Voltage (*)
Collector-Emitter Cutoff
Current
Emitter-Base Cutoff Current
Collector-Emitter Cutoff
Current
Test Condition(s)
IC=50 mA, IB=0
IC=3 mA
VCE=60 V
VCE=90 V
VCE=140 V
VEB=10 V
VCE=60 V
=0 V
V
BE
VCE=100 V
=0 V
V
BE
VCE=180 V
=0 V
V
BE
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23
BDY24
BDY25
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
Min Typ Mx Unit
60 - 90 - -
140 - -
60 - -
-
100
200
-
-
-
--
--
1.0 mA
--
--1.0mA
--0.5
--1.0
--1.0
V
V
mA
V
CE(SAT)
Collector-Emitter saturation
Voltage (*)
COMSET SEMICONDUCTORS 2/4
IC=2.0 A, IB=0.25 A
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
--1
--0.6
--0.6
V
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