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SEMICONDUCTORS
TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M,
TIC226N, TIC226S
• 8 A RMS
• 70 A Peak
• Glass Passivated Wafer
• 100 V to 800 V Off-State Voltage
• Max I
• High-temperature, High-current and high-voltage applications
• Compliance to ROHS
DESCRIPTION
This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state
to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.
ABSOLUTE MAXIMUM RATINGS
SILICON BIDIRECTIONAL TRIODE THYRISTOR
of 50 mA (Quadrants 1-3)
GT
Symbol Ratings
V
DRM
I
T(RMS)
I
TSM
I
TSM
IGM
PGM
P
G(AV)
TC
T
stg
TL
Repetitive peak off-state voltage
(see Note1)
Full-cycle RMS on-state current at (or
below) 70°C case temperature (see note2)
Peak on-state surge current full-sine-wave
(see Note3)
Peak on-state surge current half-sine-wave
(see Note4)
Peak gate current ± 1 A
Peak gate power dissipation at (or below)
85°C case temperature (pulse width ≤200
µs)
Average gate power dissipation at (or
below) 85°C case (see Note5)
Operating case temperature range -40 to +110 °C
Storage temperature range -40 to +125 °C
Lead temperature 1.6 mm from case for 10
seconds
Value Unit
A B C D E M S N
100 200 300 400 500 600 700 800 V
8 A
70 A
8 A
2.2 W
0.9 W
230 °C
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Page 2
SEMICONDUCTORS
TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M,
TIC226N, TIC226S
Notes:
1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal
1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate
linearly to 110°C case temperature at the rate of 320 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated
value of on-state current. Surge may be repeated after the device has returned to original thermal
equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated
value of on-state current. Surge may be repeated after the device has returned to original thermal
equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
R
∂JC
R
∂JA
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Junction to case thermal resistance ≤ 1.8
Junction to free air thermal resistance ≤ 62.5
°C/W
Symbol Ratings
I
DRM
IGT
VGT
IH
IL
VTM
dv/dt
dv/dt©
Repetitive peak offstate current
Gate trigger current
Gate trigger voltage
Holding current
Latching current
Peak on-state voltage I
Critical rate of rise of
off-state voltage
Critical rise of
communication voltage
† All voltages are whit respect to Main Terminal 1.
= Rated V
V
D
T
= 110°C
C
V
supply
V
supply
V
supply
V
supply
V
supply
V
supply
V
supply
V
supply
V
supply
initiating I
V
supply
initiating I
V
supply
V
supply
= ± 12 A, IG = 50 mA (see Note6) - ±1.6 ±2.1 V
TM
V
DRM
= 110°C
T
C
V
DRM
T
= 85°C
C
Test Condition(s)
, , IG = 0,
DRM
= +12 V†, RL = 10 Ω, t
= +12 V†, RL = 10 Ω, t
= -12 V†, RL = 10 Ω, t
= -12 V†, RL = 10 Ω, t
= +12 V†, RL = 10 Ω, t
= +12 V†, RL = 10 Ω, t
= -12 V†, RL = 10 Ω, t
= -12 V†, RL = 10 Ω, t
= +12 V†, IG = 0,
= 100 mA
TM
= -12 V†, IG = 0,
= -100 mA
TM
= > 20 µs
p(g)
= > 20 µs
p(g)
= > 20 µs
p(g)
= > 20 µs
p(g)
= > 20 µs
p(g)
= > 20 µs
p(g)
= > 20 µs
p(g)
= > 20 µs
p(g)
Min Typ Mx Unit
- - ±2 mA
- 2 50
- -12 -50
- -9 -50
- 20 -
- 0.7 2
- -0.8 -2
- -0.8 -2
- 0.9 2
- 5 30
- -9 -30
= +12 V† (seeNote7) - - 50
= -12 V† (seeNote7) - - -50
= Rated V
= Rated V
DRM
DRM
, IG = 0
, I
TRM
= ± 12A
- ±100 -
±5 - -
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mA
V
mA
mA
V/µs
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SEMICONDUCTORS
TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M,
TIC226N, TIC226S
Note 6: This parameters must be measured using pulse techniques, t
contacts, separate from the courrent-carrying contacts are located within 3.2mm (1/8 inch) from de device body.
Note 7: The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the
following characteristics : R
= 100Ω,
G
= 20 µs, tr = ≤ 15ns, f = 1 kHz.
tp(g)
MECHANICAL DATA CASE TO-220
= ≤1ms, duty cycle ≤ 2 %, voltage-sensing
W
Pin 1 : Main Terminal 1
Pin 2 : Main Terminal 2
Pin 3 : Gate
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