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BUZ 73A CSC
Datasheet
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COMSET SEMI CONDUCTORS BUZ 73A CSC Datasheet

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Page 1
SIPMOS
®
Power Transistor
• N channel
• Enhancement mode
Type
V
DS
I
D
R
BUZ 73 A 200 V 5.5 A 0.6
Maximum Ratings Parameter
DS(on
Ω
BUZ 73A
Pin 1 Pin 2 Pin 3
G D S
)
Package Ordering Code
TO-220 AB C67078-S1317-A3
Symbol Values Unit
Continuous drain current
T
= 37 ˚C
C
Pulsed drain current
T
= 25 ˚C
C
Avalanche current,limited by
T
jmax
Avalanche energy,periodic limited by Avalanche energy, single pulse
I
= 7 A,
D
L
= 3.67 mH,
V
= 50 V,
DD
T
= 25 ˚C
j
R
GS
= 25
Ω
Gate source voltage Power dissipation
T
= 25 ˚C
C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient
T
jmax
I
D
I
Dpuls
I
AR
E
AR
E
AS
V
GS
P
tot
T
j
T
stg
R
thJC
R
thJA
5.5
22
7
6.5 mJ
120
±
40
-55 ... + 150 ˚C
-55 ... + 150
≤
75
DIN humidity category, DIN 40 040 E
A
20 V
W
3.1 K/W
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
Data Sheet 1 05.99
Page 2
BUZ 73A
Electrical Characteristics,
Parameter
Static Characteristics
at
T
j
Drain- source breakdown voltage
V
= 0 V,
GS
I
= 0.25 mA,
D
T
= 25 ˚C
j
Gate threshold voltage
=
V
GS
V
DS, ID
= 1 mA
Zero gate voltage drain current
V
DS
V
DS
= 200 V, = 200 V,
V V
= 0 V,
GS
= 0 V,
GS
T
= 25 ˚C
j
T
= 125 ˚C
j
Gate-source leakage current
V
= 20 V,
GS
V
DS
= 0 V
Drain-Source on-resistance
V
= 10 V,
GS
I
= 4.5 A
D
= 25˚C, unless otherwise specified
Symbol Values Unit
min. typ. max.
V
(BR)DSS
200 - -
V
GS(th)
2.1 3 4
I
DSS
-
-
I
GSS
- 10 100
R
DS(on)
- 0.5 0.6
0.1 10
V
µA 1 100
nA
Ω
Data Sheet 2 05.99
Page 3
BUZ 73A
Electrical Characteristics,
Parameter Symbol Values Unit
Dynamic Characteristics
Transconductance
≥
V
2
DS
I
*
D * RDS(on)max, ID
Input capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Output capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Reverse transfer capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Turn-on delay time
V
DD
R
GS
= 30 V, = 50
Ω
V
GS
= 10 V,
Rise time
V
DD
R
GS
= 30 V, = 50
Ω
V
GS
= 10 V,
Turn-off delay time
V
DD
R
GS
= 30 V, = 50
Ω
V
GS
= 10 V,
Fall time
V
DD
R
GS
= 30 V, = 50
Ω
V
GS
= 10 V,
at
T
= 25˚C, unless otherwise specified
j
g
fs
= 4.5 A
C
iss
C
oss
C
rss
t
d(on)
I
= 3 A
D
t
r
I
= 3 A
D
t
d(off)
I
= 3 A
D
t
f
I
= 3 A
D
min. typ. max.
S
3 4.2 -
pF
- 400 530
- 85 130
- 45 70 ns
- 10 15
- 40 60
- 55 75
- 30 40
Data Sheet 3 05.99
Page 4
BUZ 73A
Electrical Characteristics,
at
T
= 25˚C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
T
= 25 ˚C
C
Inverse diode direct current,pulsed
T
= 25 ˚C
C
Inverse diode forward voltage
V
= 0 V,
GS
I
= 14 A
F
Reverse recovery time
V
= 100 V,
R
=
I
l
d
i
F
/dt = 100 A/µs
S,
F
Reverse recovery charge
V
= 100 V,
R
=
I
l
d
i
F
/dt = 100 A/µs
S,
F
I
I
V
t
Q
S
SM
SD
rr
A
- - 5.5
- - 22 V
- 1.3 1.7 ns
- 200 -
rr
µC
- 0.6 -
Data Sheet 4 05.99
Page 5
BUZ 73A
Power dissipation
P
= ƒ(
T
tot
P
tot
)
C
45
W
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 ˚C 160
Drain current
I
= ƒ(
T
D
parameter:
I
D
T
C
)
C
≥
V
6.0 A
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 20 40 60 80 100 120 ˚C 160
GS
10 V
T
C
Safe operating area
I
= ƒ(
V
10
10
10
10
A
-1
DS
2
1
0
10
)
D
= 0.01
=
DS(on)
R
0
V
D
parameter:
I
D
, T
/
DS
10
= 25˚C
C
I
D
1
10
DC
2
t
= 36.0µs
p
100 µs
1 ms
10 ms
V
DS
Transient thermal impedance
Z
= ƒ(
t
th JC
parameter:
10
K/W
Z
thJC
10
10
10
V
10
)
p
D = t
/
T
p
1
0
-1
D = 0.50
0.20
0.10
10
0.05
0.02
0.01
-2
-1
10
10 0 s
t
p
-2
single pulse
-3
-7
-6
-5
-4
10
10
10
10
10
-3
Data Sheet 5 05.99
Page 6
BUZ 73A
Typ. output characteristics
ƒ(
I
=
V
D
parameter:
I
D
)
DS
t
= 80 µs
p
13
P
= 40W
tot
A 11 10
9 8 7 6 5 4 3 2 1
0
0 2 4 6 8 10 12 V 16
l
i
g
h
j
k
Typ. drain-source on-resistance
R
DS (on)
parameter:
f
V
[V]
GS a 4.0
e
b 4.5 c 5.0 d 5.5 e 6.0 f 6.5
d
g 7.0 h 7.5 i 8.0
c
j 9.0 k 10.0 l 20.0
b
a
V
DS
R
DS (on)
ƒ(
=
I
)
D
V
GS
1.8
a
b
c
Ω
1.4
1.2
1.0
0.8
0.6
0.4
V
V
[V] =
[V] =
GS
GS
0.2
a
a
b
c
d
e
f
g
h
i
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
0.0 0 2 4 6 8 A 11
8.0
9.0
10.0
j
I
D
d
e
f
g
h
i
j
k
k
20.0
Typ. transfer characteristics
parameter:
V
≥
DS
I
D
t
= 80 µs
p
2 x
x
R
ID
13
A 11 10
9 8 7 6 5 4 3 2 1
0
DS(on)max
0 1 2 3 4 5 6 7 8 V 10
I
D
= f (
V
GS
)
V
GS
Typ. forward transconductance
parameter:
V
≥
DS
g
fs
t
= 80 µs,
p
2 x
ID x R
6.0 S
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
DS(on)max
0 2 4 6 8 A 12
g
=
f
(
I
fs
)
D
I
D
Data Sheet 6 05.99
Page 7
BUZ 73A
Drain-source on-resistance
R
DS (on)
parameter:
R
DS (on)
= ƒ(
T
)
j
I
1.9
= 4.5 A,
D
V
= 10 V
GS
Ω
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-60 -20 20 60 100 ˚C 160
98% typ
Gate threshold voltage
V
parameter:
V
GS(th)
T
j
= ƒ(
T
GS (th)
4.6 V
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
)
j
V
=
V
,
I
GS
-60 -20 20 60 100 ˚C 160
DS
= 1 mA
D
98%
typ
2%
T
j
Typ. capacitances
C = f (V
parameter:
C
)
DS
V
= 0V, f = 1MHz
GS
1
10
nF
0
10
-1
10
-2
10
0 5 10 15 20 25 30 V 40
Forward characteristics of reverse diode
I
= ƒ(
V
F
parameter:
I
F
C
iss
C
oss
C
rss
V
DS
)
SD
Tj, t
= 80 µs
p
2
10
A
1
10
0
10
T
= 25 ˚C typ
j
T
= 150 ˚C typ
j
T
= 25 ˚C (98%)
j
T
= 150 ˚C (98%)
j
-1
10
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
V
SD
Data Sheet 7 05.99
Page 8
BUZ 73A
Avalanche energy
parameter:
R
= 25 Ω, L = 3.67 mH
GS
E
AS
I
= 7 A,
D
130
mJ 110 100
90 80 70 60 50 40 30 20 10
0
20 40 60 80 100 120 ˚C 160
E
V
AS
DD
= ƒ(
T
= 50 V
)
j
T
j
Typ. gate charge
V
= ƒ(
Q
GS
parameter:
16
V
V
GS
12
10
8
6
4
2
0
)
Gate
I
D puls
0 4 8 12 16 20 24 28 32 nC 38
= 14 A
V
0,2
DS max
0,8
V
DS max
Q
Gate
Drain-source breakdown voltage
V
(BR)DSS
V
(BR)DSS
= ƒ(
T
)
j
240
V 230 225 220 215 210 205 200 195 190 185
180
-60 -20 20 60 100 ˚C 160
T
j
Data Sheet 8 05.99
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