COMSET SEMI CONDUCTORS 2N 2907A CSC Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D125

2N2907; 2N2907A

PNP switching transistors

Product specification
Supersedes data of September 1994

1997 May 30

File under Discrete Semiconductors, SC04

Philips Semiconductors Product specification

PNP switching transistors 2N2907; 2N2907A

FEATURES

• High current (max. 600 mA)

• Low voltage (max. 60 V).

PINNING

PIN DESCRIPTION

1 emitter
2 base

APPLICATIONS

3 collector, connected to case

• Switching and linear amplification.

DESCRIPTION

PNP switching transistor in a TO-18 metal package.
NPN complements: 2N2222 and 2N2222A.

handbook, halfpage

3

1

2

2

MAM263

3

1

Fig.1 Simplified outline (TO-18) and symbol.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V

CBO
CEO

collector-base voltage open emitter −−60 V
collector-emitter voltage open base

2N2907 −−40 V
2N2907A −−60 V

I

C

P

tot

h

FE

f

T

t

off

collector current (DC) −−600 mA
total power dissipation T

≤ 25 °C − 400 mW

amb

DC current gain IC= −150 mA; VCE= −10 V 100 300
transition frequency IC= −50 mA; VCE= −20 V; f = 100 MHz 200 − MHz
turn-off time I

= −150 mA; I

Con

= −15 mA; I

Bon

=15mA − 300 ns

Boff

1997 May 30 2

Philips Semiconductors Product specification

PNP switching transistors 2N2907; 2N2907A

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

BM

P

tot

T

stg

T

j

T

amb

collector-base voltage open emitter −−60 V
collector-emitter voltage open base; IC<−100 mA

2N2907 −−40 V

2N2907A −−60 V
emitter-base voltage open collector −−5V
collector current (DC) −−600 mA
peak collector current −−800 mA
peak base current −−200 mA
total power dissipation T

≤ 25 °C − 400 mW

amb

T

≤ 25 °C − 1.2 W

case

storage temperature −65 +150 °C
junction temperature − 200 °C
operating ambient temperature −65 +150 °C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-a
th j-c

thermal resistance from junction to ambient in free air 438 K/W
thermal resistance from junction to case 146 K/W

1997 May 30 3

Philips Semiconductors Product specification

PNP switching transistors 2N2907; 2N2907A

CHARACTERISTICS

T

=25°C unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

CBO

I

CBO

I

EBO

h

FE

h

FE

V

CEsat

V

BEsat

C

c

C

e

f

T

collector cut-off current

2N2907 I

= 0; VCB= −50 V −−20 nA

E

I

= 0; VCB= −50 V; T

E

= 150 °C −−20 µA

amb

collector cut-off current

2N2907A I

= 0; VCB= −50 V −−10 nA

E

I

= 0; VCB= −50 V; T

E

= 150 °C −−10 µA

amb

emitter cut-off current IC= 0; VEB= −5V −−50 nA
DC current gain VCE= −10 V

2N2907 I

= −0.1 mA 35 −

C

= −1mA 50 −

I

C

I

=−10 mA 75 −

C

I

= −150 mA; note 1 100 300

C

I

= −500 mA; note 1 30

C

DC current gain VCE= −10 V

2N2907A I

= −0.1 mA 75 −

C

I

= −1 mA 100 −

C

= −10 mA 100 −

I

C

I

= −150 mA; note 1 100 300

C

I

= −500 mA; note 1 50 −

C

collector-emitter saturation voltage IC= −150 mA; IB= −15 mA; note 1 −400 mV

I

= −500 mA; IB= −50 mA; note 1 −1.6 V

C

base-emitter saturation voltage IC= −150 mA; IB= −15 mA; note 1 −1.3 V

I

= −500 mA; IB= −50 mA; note 1 −2.6 V

C

collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 8pF
emitter capacitance IC=ic= 0; VEB= −2 V; f = 1 MHz − 30 pF
transition frequency IC= −50 mA; VCE= −20 V; f = 100 MHz;

200 − MHz

note 1
Switching times (between 10% and 90% levels); see Fig.2
t

on

t

d

t

r

t

off

t

s

t

f

turn-on time I
delay time − 15 ns
rise time − 35 ns
turn-off time − 300 ns
storage time − 250 ns
fall time − 50 ns

= −150 mA; I

Con

Note

1. Pulse test: t

≤ 300 µs; δ≤0.02.

p

1997 May 30 4

= −15 mA; I

Bon

=15mA − 45 ns

Boff

Philips Semiconductors Product specification

PNP switching transistors 2N2907; 2N2907A

handbook, full pagewidth

oscilloscope

Vi= −9.5V; T = 500 µs; tp=10µs; tr=tf≤3 ns.
R1 = 68 Ω; R2 = 325 Ω; RB= 325 Ω; RC= 160 Ω.
VBB= 3.5 V; VCC= −29.5 V.
Oscilloscope input impedance Zi=50Ω.

V

R

(probe)

450 Ω

V

i

B

R2

R1

BB

V

CC

R

C

V

o

DUT

Fig.2 Test circuit for switching times.

(probe)

450 Ω

MGD624

oscilloscope

1997 May 30 5

Philips Semiconductors Product specification

PNP switching transistors 2N2907; 2N2907A

PACKAGE OUTLINE

Metal-can cylindrical single-ended package; 3 leads SOT18/13

j

B

α

1

k

2

D

1

seating plane

w

M MBM

A

b

3

a

A

D

0 5 10 mm

scale

A L

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT w

AabDD

5.31

mm

4.74

OUTLINE
VERSION

SOT18/13 TO-18B11/C7 type 3

2.54

0.47

0.41

IEC JEDEC EIAJ

5.45

5.30

4.70

4.55

jkL

1

1.03

1.1

0.94

0.9

REFERENCES

15.0

12.7

0.40

1997 May 30 6

α

45°

EUROPEAN

PROJECTION

ISSUE DATE

97-04-18

Philips Semiconductors Product specification

PNP switching transistors 2N2907; 2N2907A

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 May 30 7

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© Philips Electronics N.V. 1997 SCA54
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Printed in The Netherlands 117047/00/02/pp8 Date of release: 1997 May30 Document order number: 9397 750 02224