COMSET MJ900, MJ901, MJ1001, MJ1000 Datasheet

COMSET

SEMICONDUCTORS

MJ900/901/1000/1001

COMPLEMENTARY POWER

TO-3

DARLINGTONS

The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas
transistors in monolithic Darlington configuration, and are mounted in
JEDEC TO-3 metal case. They are intended for use in power linear and
switching applications.
PNP types are the MJ900 and MJ901, and their complementary NPN
types are the MJ1000 and MJ1001 respectively.

ABSOLUTE MAXIMUM RATINGS

Symbol Ratings Value Unit

V

CBO

MJ900
MJ1000

Collector-Base Voltage

MJ901
MJ1001

60

80

Vdc

MJ900
MJ1000

V

CEO

V

EBO

I

C

Collector-EmitterVoltage

Emitter-Base Voltage

Collector Current

=0

I

B

I

C(RMS)

Page 1 of 4

MJ901
MJ1001

MJ900
MJ1000
MJ901
MJ1001
MJ900
MJ1000
MJ901
MJ1001

60

Vdc

80

5.0 Vdc

8.0

Adc

COMSET

SEMICONDUCTORS

MJ900/901/1000/1001

I

B

Base Current

MJ900
MJ1000
MJ901
MJ1001

0.1

Adc

P

T

T

J

T

S

Power Dissipation

Junction Temperature

Storage Temperature

THERMAL CHARACTERISTICS

@ TC < 25°

Derate above
25°C

MJ900
MJ1000
MJ901
MJ1001

MJ900
MJ1000
MJ901
MJ1001

90 Watts

0.515 W/°C

-65 to +200 °C

Symbol Ratings Value Unit

MJ900

R

thJ-C

Thermal Resistance, Junction to Case

Page 2 of 4

MJ1000
MJ901
MJ1001

1.94 °C/W