COMSET MJ4035, MJ4033, MJ4031, MJ4032, MJ4030 Datasheet
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MJ4030 – MJ4031 – MJ4032 PNP
MJ4033 – MJ4034 – MJ4035 NPN
DARLINGTON MEDIUM POWER COMPLEMENTARY
SILICON TRANSISTORS
For use as output devices in complementary general purpose amplifier
applications.
•
High DC current Gain – h
•
Monolithic Construction with Built-in Base Emitter Shunt Resistor
The complementary PNP types are the MJ4033/34/35
ABSOLUTE MAXIMUM RATINGS
=3500 (Typ) @ IC=10 Adc
FE
Symbol Ratings Value Unit
V
V
V
CBO
CEO
EBO
Collector-Base Voltage IE=0
Collector-EmitterVoltage IB=0
Emitter-Base Voltage IC=0
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
60
80
100
60
80
100
5.0 V
V
V
COMSET SEMICONDUCTORS 1/5
MJ4030 – MJ4031 – MJ4032 PNP
MJ4033 – MJ4034 – MJ4035 NPN
I
I
P
T
C
B
T
J Ts
Collector Current
Base Current
Power Dissipation @ TC < 25°
Junction
Storage Temperature
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
16
0.5
150 Watts
200
-65 to +200
A
A
°C
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
MJ4030
MJ4033
R
thJ-C
Thermal Resistance, Junction to Case
MJ4031
MJ4034
MJ4032
MJ4035
1.17 °C/W
COMSET SEMICONDUCTORS 2/5
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