COMSET MJ3001, MJ3000, MJ2500, MJ2501 Datasheet

MJ2500 - MJ2501 PNP
MJ3000 - MJ3001 NPN

SILICON EPITAXIAL-BASE DARLINGTON

The MJ2500, and MJ2501 are silicon epitaxial-base NPN power transistors in

monolithic Darlington configuration and are mounted in Jedec TO-3 metal case.

They are intented for use in power linear and switching applications.

The complementary PNP types are the MJ3000 and MJ3001 respectively.

ABSOLUTE MAXIMUM RATINGS

Symbol Ratings Value Unit

V

V

V

I

C

CBO

CEO

EBO

Collector-Base Voltage IE=0

Collector-EmitterVoltage IB=0

Emitter-Base Voltage IC=0

Collector Current

MJ2500
MJ3000

MJ2501
MJ3001

MJ2500
MJ3000

MJ2501
MJ3001

MJ2500
MJ3000
MJ2501
MJ3001
MJ2500
MJ3000
MJ2501
MJ3001

60

80

60

80

5.0 Vdc

10

Vdc

Vdc

Adc

COMSET SEMICONDUCTORS 1/4

MJ2500 - MJ2501 PNP
MJ3000 - MJ3001 NPN

Symbol Ratings Value Unit

MJ2500

I

P

T

B

T

J Ts

Base Current

Power Dissipation

Junction
Storage Temperature

@ T

< 25°

C

MJ3000
MJ2501
MJ3001

MJ2500
MJ3000
MJ2501
MJ3001

MJ2500
MJ3000
MJ2501
MJ3001

0.2

150 Watts

200

-65 to +200

Adc

°C

THERMAL CHARACTERISTICS

Symbol Ratings Value Unit

MJ2500

R

thJ-C

Thermal Resistance, Junction to Case

MJ3000
MJ2501
MJ3001

1.17 °C/W

ELECT RICAL CHARACTE RISTI CS

TC=25°C unless otherwise noted

Symbol Ratings

BV

CEO

Collector-Emitter
Breakdown Voltage (*)

IC=100 mAdc, IB=0

Test Condition(s)

MJ2500
MJ3000

MJ2501
MJ3001

Min Typ Mx Unit

60 - -

80 - -

Vdc

COMSET SEMICONDUCTORS 2/4