Communication Concepts MRF151G User Manual

MRF151G

Part Status: Released

RF Power Field-Effect Transistor
300 W, 50 V, 175 MHz N-Channel Broadband MOSFET

Features

Guaranteed Performance at 175 MHz, 50 V:

• Output Power — 300 W

• Gain — 14 dB (16 dB Typ)

• Efficiency — 50%

• Low Thermal Resistance — 0.35°C/W

• Ruggedness Tested at Rated Output Power

• Nitride Passivated Die for Enhanced Reliability

Description and Applications

Designed for broadband commercial and military
applications at frequencies to 175 MHz. The high
power, high gain and broadband performance of this
device makes possible solid state transmitters for
FM broadcast or TV channel frequency bands.

Package Outline

M/A-COM Products

RoHS Compliant

1

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.

• North America Tel: [phone] / Fax: [phone]

• Europe Tel: [phone] / Fax: [phone]

• Asia/Pacific Tel: [phone] / Fax: [phone]
Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.

MRF151G

Part Status: Released

RF Power Field-Effect Transistor
300 W, 50 V, 175 MHz N-Channel Broadband MOSFET

M/A-COM Products

RoHS Compliant

2

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.

• North America Tel: [phone] / Fax: [phone]

• Europe Tel: [phone] / Fax: [phone]

• Asia/Pacific Tel: [phone] / Fax: [phone]
Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.

MRF151G

Part Status: Released

RF Power Field-Effect Transistor
300 W, 50 V, 175 MHz N-Channel Broadband MOSFET

M/A-COM Products

RoHS Compliant

3

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.

• North America Tel: [phone] / Fax: [phone]

• Europe Tel: [phone] / Fax: [phone]

• Asia/Pacific Tel: [phone] / Fax: [phone]
Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.