Communication Concepts MPSH81 User Manual
C
E
B
TO-92
PNP RF Transistor
This device is designed for general RF amplifier and mixer
applications to 250 mHz with collector currents in the 1.0 mA
to 30 mA range. Sourced from Process 75.
MMBTH81MPSH81
C
SOT-23
Mark: 3D
MPSH81 / MMBTH81
E
B
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
Collector-Emitt er Volt age 20 V
Collector-Base Voltage 20 V
Emitter-Base Voltage 3.0 V
Collector Current - Continuous 50 mA
Operating and Stora ge Junction Temperature Range -55 to +150
°
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
MPSH81 *MMBTH81
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Total Device Dissipation
Derate above 25°C
Ther mal Resistance, Junction t o Case 125
Thermal Resistance, Junction to Ambient 357 556
350
2.8
225
1.8
mW
mW/°C
C/W
°
C/W
°
1997 Fairchild Semiconductor Corporation
PNP RF Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
BE(on)
SMALL SIGNAL CHARACTERISTICS
f
T
C
cb
C
ce
Collector-Emitter Breakdo wn Voltage* IC = 1.0 mA, IB = 0 20 V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
I
= 10 µA, IE = 0
C
I
= 10 µA, IC = 0
E
20 V
3.0 V
Collector Cut off Current VCB = 10 V, IE = 0 100 nA
Emitter Cutoff Current VEB = 2.0 V, IC = 0 100 nA
DC Current Gain IC = 5.0 mA, VCE = 10 V 60
Collector-Emitter Saturation Voltage IC = 5.0 mA, IB = 0.5 mA 0.5 V
)
Base-Emitter On Vo ltage IC = 5.0 mA, VCE = 10 V 0.9 V
Current Gain - Bandwidth Product IC = 5.0 mA, VCE = 10 V,
600 MHz
f = 100 MHz
Collector-Base Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 0.85 pF
Collector Emitter Capcitance VCB = 10 V, IB = 0, f = 1.0 MHz 0.65 pF
MPSH81 / MMBTH81
*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Spice Model
PNP(Is=10f Xti=3 Eg=1.11 Vaf=100 Bf=133.8 Ise=1.678p Ne=2.159 Ikf=.1658 Nk=.901 Xtb=1.5 Var=100 Br=1
Isc=9.519n Nc=3.88 Ikr=5.813 Rc=7.838 Cjc=2.81p Mjc=.1615 Vjc=.8282 Fc=.5 Cje=2.695p Mje=.3214 Vje=.7026
Tr=11.32n Tf=97.83p Itf=69.29 Xtf=599u Vtf=10)
T ypical Characteristics
DC Current Gain vs
Collector Current
200
180
160
140
120
100
80
60
FE
40
h - DC CURRENT GAIN
20
0
-
0.1 1 10 100
I - COLLECTOR CURRENT (mA)
C
T = 125°C
A
T = 25°C
A
-
T = 55°C
A
V = 1.0V
CE
---
Collecto r Saturatio n Voltage
vs Collector Current
-
1
-
0.5
-
0.2
-
0.1
-
0.05
-
0.02
-
0.01
CE( SAT)
0.1 1 10 100
-
V - COLLECTOR SAT. VOLTAGE (V)
T = 25°C
A
I - COLLECTOR CURRENT ( mA)
C
T = 125°C
T = 55°C
-
A
A
--
I = 10 I
C
B
-
3
Typical Characteristics (continued)
MPSH81 / MMBTH81
PNP RF Transistor
(continued)
Base -Emi t ter Satu ration
Voltage vs Collecto r Current
-1.6
I = 10 I
B
C
-1.4
-1.2
-
T = 55°C
-
A
T = 125°C
A
T = 25°C
A
-1
-0.8
-0.6
-0.4
-
0.1 1 10 100
BE( SAT)
V - BASE- EMI T T ER SAT. VO LTAG E (V)
I - COLLECTOR CURRENT (mA)
C
Col lector Rever s e Curr ent
vs Am b ient Temperature
100
10
V = -6 .0V
1
0.1
0.01
25 50 75 100 125 150
CES
I - COLLECTOR REVERSE CURRENT (nA)
CE
V = -3 .0V
CE
T - AM BI ENT TEMPE RATU R E ( C)
A
°
Base-Emitter ON Voltage
vs Coll ecto r C urrent
1
V = 10 V
CE
0.8
0.6
T = 25°C
A
T = 100°C
A
A
0.4
0.2
--
0
-
BE(ON)
0.1 1 10 100
V - BA SE- E MITTER ON VOLTAGE (V)
-
C
I - COLLECTOR CURRENT (mA)
--
Inpu t / Ou tput Capa citance
vs Reverse B ias Voltage
3
2.8
2.6
2.4
2.2
2
1.8
1.6
CAPACITANCE (pF)
1.4
C
ibo
1.2
1
RE VE RSE BI AS VOLTAGE (V)
f = 1.0 MHz
C
obo
-10-8-6-4-20
Contours of Constant Gain
Bandwidth Product (f )
-14
-12
-10
-8
-6
-4
-2
200 MHz 500 MHz
CE
V - COL LECTOR VOLTA GE (V)
0
-
0.1 1 10 100
I - COLLECTOR CURRENT (mA)
C
900 MHz
-
1500 MHz
1200 MHz
500 MHz
200 MHz
-
T
Power Dissipation vs
Ambient Temperature
350
300
250
200
SOT-23
150
100
50
D
P - POWER DISSIPATION (mW)
-
0
0 255075100125150
TO-92
TEMPERATURE ( C)
°
TO-92 Tape and Reel Data
TO-92 Packaging
Configuration: Figure 1.0
FSCINT Label sample
FAIRCHILD SEMICONDUCTOR CORPORATION
LOT:
CBVK741B019
NSID:
PN2222N
D/C1:
SPEC REV:
D9842
QA REV:
HTB:B
QTY:
10000
SPEC:
B2
(FSCINT)
F63TNR Label sample
LOT: CBVK741B019
FSID: PN222N
D/C1: D9842 QTY1: SPEC REV:
D/C2: QTY2: CPN:
QTY: 2000
SPEC:
N/F: F (F63TNR)3
TO-92 TNR/AMMO PACKING INFROMATION
Packing Style Quantity EOL c o d e
Reel A 2,000 D26Z
Ammo M 2,000 D74Z
Unit w eight = 0.22 gm
Reel weight with components = 1 .0 4 kg
Amm o weight with compone n ts = 1.02 kg
Max q uantity per inte rmediate b ox = 10,000 units
E2,000 D27Z
P2,000 D75Z
(TO-92) BULK PACKING INFORMATION
EOL
CODE
J18Z
J05Z
NO EOL
CODE
L34Z
DESCRIPTION
TO-18 OPTION STD NO LEAD CLIP
TO-5 OPTION STD NO LEAD CLIP
TO-92 STANDARD
STRAIGHT FOR: PKG 92,
94 (NON PROELECTRON
SERIES), 96
TO-92 STANDARD
STRAIGHT FOR: PKG 94
(PROELECTRON SERIES
BCXXX, BFXXX, BSRXXX),
97, 98
NO LEADCLIP
NO LEADCLIP
LEADCLIP
DIMENSION
327mm x 158mm x 135mm
Immediate Box
Customized
Label
QUANTITY
2.0 K / BOX
1.5 K / BOX
2.0 K / BOX
2.0 K / BOX
TAPE and REEL OPTION
See Fig 2.0 for various
Reeling Styles
5 Reels per
Intermediate Box
F63TNR
Label
Customized
Label
AMMO PACK OPTION
See Fig 3.0 for 2 Ammo
Pack Options
5 Ammo boxes per
Intermediate Box
F63TNR
Label
BULK OPTION
See Bulk Packing
Information table
FSCINT Label
2000 units per
EO70 box for
std option
375mm x 267mm x 375mm
Intermediate Box
333mm x 231mm x 183mm
Intermediate Box
Anti-static
Bubble Sheets
114mm x 102mm x 51mm
FSCINT
Label
Customized
Label
FSCINT
Label
Customized
Label
Immediate Box
530mm x 130mm x 83mm
FSCINT Label
©2001 Fairchild Semiconductor Corporation
Intermediate box
ustomized
C
Label
10,000 units maximum
per intermediate box
for std option
5 EO70 boxes per
intermediate Box
March 2001, Rev. B1
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