Communication Concepts MJE243 User Manual
MJE243 - NPN,
MJE253 - PNP
Complementary Silicon
Power Plastic Transistors
These devices are designed for low power audio amplifier and
low−current, high−speed switching applications.
Features
• High Collector−Emitter Sustaining Voltage −
V
CEO(sus)
• High DC Current Gain @ I
h
FE
• Low Collector−Emitter Saturation Voltage −
V
CE(sat)
• High Current Gain Bandwidth Product −
f
T
• Annular Construction for Low Leakages
I
CBO
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V
Collector Current − Continuous
Base Current I
Total Power Dissipation @ TC = 25_C
Derate above 25_C
Total Power Dissipation @ TA = 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
Thermal Resistance,
Junction−to−Ambient
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
= 100 Vdc (Min)
= 200 mAdc
C
= 40−200
= 40−120
= 0.3 Vdc (Max) @ IC = 500 mAdc
= 40 MHz (Min) @ IC = 100 mAdc
= 100 nAdc (Max) @ Rated V
Rating Symbol Value Unit
− Peak
TJ, T
CEO
I
P
P
q
q
CB
EB
C
B
D
D
stg
JC
JA
CB
100 Vdc
100 Vdc
7.0 Vdc
4.0
8.0
10 Adc
15
120
1.5
12
–65 to + 150
8.34
83.4
mW/_C
mW/_C
_C/W
_C/W
Adc
W
W
_C
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4.0 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
100 VOLTS, 15 WATTS
TO−225
CASE 77
3
2
1
MARKING DIAGRAM
Y = Year
WW = Work Week
JE2x3 = Device Code
G=Pb−Free Package
x = 4 or 5
ORDERING INFORMATION
Device Package Shipping
MJE243 TO−225 500 Units/Box
MJE243G
MJE253 TO−225 500 Units/Box
MJE253G
TO−225
(Pb−Free)
TO−225
(Pb−Free)
STYLE 1
YWW
JE2x3G
500 Units/Box
500 Units/Box
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2009
April, 2009 − Rev. 13
1 Publication Order Number:
Preferred devices are recommended choices for future use
and best overall value.
MJE243/D
MJE243 − NPN, MJE253 − PNP
ELECTRICAL CHARACTERISTICS (T
= 25_C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 10 mAdc, IB = 0)
Collector Cutoff Current
(V
= 100 Vdc, IE = 0)
CB
(V
= 100 Vdc, IE = 0, TC = 125_C)
CE
Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) I
ON CHARACTERISTICS
DC Current Gain
(I
= 200 mAdc, VCE = 1.0 Vdc)
C
= 1.0 Adc, VCE = 1.0 Vdc)
(I
C
Collector−Emitter Saturation Voltage
= 500 mAdc, IB = 50 mAdc)
(I
C
= 1.0 Adc, IB = 100 mAdc)
(I
C
Base−Emitter Saturation Voltage
(I
= 2.0 Adc, IB = 200 mAdc)
C
Base−Emitter On Voltage
(I
= 500 mAdc, VCE = 1.0 Vdc)
C
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 100 mAdc, VCE = 10 Vdc, f
= 10 MHz)
test
Output Capacitance
(V
= 10 Vdc, IE = 0, f = 0.1 MHz)
CB
Symbol Min Max Unit
V
CEO(sus)
I
CBO
EBO
h
V
CE(sat)
V
BE(sat)
V
BE(on)
C
FE
f
T
ob
100 − V
−
−
− 0.1
40
15
−
−
0.1
0.1
mAdc
180
−
0.3
0.6
− 1.8 V
− 1.5 V
40 − MHz
− 50 pF
mA
mA
−
V
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