Available at http://www.freescale.com. Go to Support/Software & Tools/
Additional Resources/Reference Designs/Networking
Rev . 1.1, 6/2011
RF Power Reference Design Library
FM Broadcast Reference Design
High Ruggedness N--Channel Enhancement--Mode
Lateral MOSFETs
Reference Design Characteristics
The MRFE6VP61K25H/HS are versatile devices and are well suited for a
wide range of applications. They are capable of delivering 1.2 kW under
continuous wave test signaling as a result of their high efficiency and low
thermal resistance. This document focuses on FM broadcast radio applications
for both analog and complex modulation waveforms.
Frequency Band: 87.5--108 MHz
Output Power: 1100 Watts CW
Supply Voltage: 50 Vdc
Power Gain (Typ): 25 dB
Drain Efficiency (Min): 79% (at fundamental frequency)
The MRFE6VP61K25H/HS products are enhanced ruggedness 50 volt
LDMOS power transistors that can operate in harsh environments and in highly
mismatched applications (within the limit of maximum junction temperature).
These parts are designed for high voltage operation and are fabricated using
Freescale’s very high voltage 6th generation (VHV6E) platform.
MRFE6VP61K25H
MRFE6VP61K25HS
FM Broadcast
87.5--108 MHz, 1100 W CW, 50 V
FM BROADCAST
REFERENCE DESIGN
V
DD
BIAS
M
OUTPUT
+
-
M
BIAS
V
DD
RF
INPUT
M=Match
V
GG
BIAS
M
+
M
BIAS
V
GG
RF
FM BROADCAST REFERENCE DESIGN
This reference design is designed to demonstrate the RF
performance characteristics of the MRFE6VP61K25H/HS
devices when applied to the 87.5--108 MHz FM broadcast
frequency band. The reference design is tuned for
performance at 1100 watts CW output power, V
and IDQ= 200 mA.
=50volts
DD
REFERENCE DESIGN LIBRARY TERMS
AND CONDITIONS
Freescale is pleased to make this reference design
available for your use in development and testing of your
own product or products. The reference design contains an
easy--to--copy, fully functional amplifier design. It consists of
“no tune” distributed element matching circuits designed to
be as small as possible, and is designed to be used as a
“building block” by our customers.
HEATSINKING
When operating this fixture it is critical that adequate heatsinking is provided for the device. Excessive heating of the
device may prevent duplication of the included measurements
and/or destruction of the device.
Figure 1. FM Broadcast Reference Design Fixture
Freescale Semiconductor, Inc., 2011.All rights reserved.
RFReferenceDesignDataFreescaleSemiconductor
MRFE6VP61K25HMRFE6VP61K25HSFMBroadcast
1
MEASUREMENTS
31
30
29
28
f = 108 MHz
108 MHz
D
87.5 MHz
98 MHz
90
80
70
32
30
D
28
60
26
27
, POWER GAIN (dB)
ps
26
G
25
VDD=50V
I
DQ
= 200 mA
87.5 MHz
98 MHz
G
ps
24
3005007001100
200400600800 900 1000
100
, OUTPUT POWER (WATTS)
P
out
Air--Cooled, CW, 87.5--108 MHz, Low Pass Filter
Figure 2. Continuous Wave Performance Graph
with Low Pass Filter versus Output Power
1200
50
24
, POWER GAIN (dB)
DRAIN EFFICIENCY (%)
40
30
20
ps
G
D,
22
P
out
V
DD
I
DQ
= 1100 W
=50V
= 200 mA
20
889296100 102 104
86
G
ps
f, FREQUENCY (MHz)
Air--Cooled, CW, 87.5--108 MHz, Low Pass Filter
Figure 3. Continuous Wave Performance Graph
with Low Pass Filter versus Frequency
Table 1. CW Drive--Up at 87.5 MHz
P
in
(W)
0.315027.0-- 6 . 133.6508.90.2
0.531428.0-- 6 . 548.05013.10.2
1.063928.1-- 8 . 165.85019.40.2
1.584427.5-- 10.172.65023.20.2
2.097526.9-- 1 1 . 976.15025.60.2
2.5105626.3--13.078.15027.00.2
3.0110025.6--13.379.15027.80.2
3.5111 625.0-- 13.679.25028.20.2
P
(W)
out
Gain
(dB)
IRL
(dB)
Eff
(%)
V
(V)
DD
I
(A)
Table 2. CW Drive--Up at 98 MHz
P
in
(W)
0.316827.5-- 1 1 . 036.8509.10.2
0.534328.4-- 1 1 . 852.05013.20.2
1.066028.2-- 14.968.55019.30.2
1.586427.6-- 19.475.35022.90.2
2.099927.0-- 22.478.75025.40.2
2.5105826.3--22.080.15026.40.2
3.0108525.6--22.080.25027.00.2
3.5109424.9--22.680.45027.20.2
P
(W)
out
Gain
(dB)
IRL
(dB)
Eff
(%)
V
(V)
DD
I
(A)
Table 3. CW Drive--Up at 108 MHz
P
in
(W)
0.319328.1-- 14.240.9509.40.2
0.537728.8-- 14.956.15013.40.2
1.069528.4-- 15.672.95019.10.2
1.588127.7-- 13.578.65022.40.2
2.098026.7-- 14.179.25022.90.2
2.5101826.1--12.281.65024.90.2
3.0106625.5-- 11 . 882.45025.90.2
3.5109224.9-- 11 . 882.75026.40.2
1. IDQis set by adjusting a variable gate--source voltage while maintaining a constant 50 volts at the drain.
P
(W)
out
Gain
(dB)
IRL
(dB)
Eff
(%)
V
(V)
DD
I
(A)
DD
DD
DD
108
90
80
70
60
50
DRAIN EFFICIENCY (%)
D,
40
30
110909498106
(1)
I
DQ
(A)
(1)
I
DQ
(A)
(1)
I
DQ
(A)
MRFE6VP61K25H MRFE6VP61K25HS FM Broadcast
2
RF Reference Design Data
Freescale Semiconductor
AMPLIFIER DESIGN
MATCHING NETWORK
As a first order approximation, the typical maximum
efficiency impedance point corresponds to a 25% power
degradation from the maximum P3dB impedance. The
maximum output power impedance value on this device
corresponds toa 1.25 kW output capabilityfrom
87.5--108 MHz. This puts the targeted P1dB compression
value at 800 watts of output power total, or 400 watts per
side. The initial load impedance is determined using the
following equation:
out
2
=
)
(0.85 50 V)
(2 400 W)
(0.85 VDD)
R=
(2 P
R (drain to drain) = 2.25 x2=4.5
The coaxial transformer turns ratio was chosen to meet
this required impedance level and the length of the coax
(series inductance) was tuned to attain maximum efficiency
and maximum power transfer between the device and its
complex conjugate test fixture load impedance.
2
=2.25
FIXTURE IMPEDANCE
VDD=50Vdc,IDQ= 200 mA, P
f
MHz
87.52.20 + j6.704.90 + j2.90
982.30 + j6.904.10 + j2.50
1082.30 + j7.004.40 + j3.60
Z
= Test circuit impedance as measured from
source
= Test circuit impedance as measured from
Z
load
Input
Matching
Network
Z
source
gate to gate, balanced configuration.
drain to drain, balanced configuration.
Device
Under
+
Tes t
--+
Z
source
Figure 4. Series Equivalent Source and Load
Impedance
= 1100 W CW
out
--
Z
load
Z
load
Output
Matching
Network
RF Reference Design Data
Freescale Semiconductor
Figure 5. FM Broadcast Reference Design Fixture Impedance
MRFE6VP61K25H MRFE6VP61K25HS FM Broadcast
3
CIRCUIT DESCRIPTION
C1
C3
V
GS
B1
R1
RF
INPUT
T1
L1
C2
C15C16C17C19C18
B2
COAX1
C4
L2
L3
V
DD
C7
C8
C9
COAX3
RF
OUTPUT
COAX2
B3
C22C23C24C21C20
Figure 6. FM Broadcast Reference Design Schematic Diagram
MRFE6VP61K25H MRFE6VP61K25HS FM Broadcast
4
C10
C11
C12
C5
V
DD
RF Reference Design Data
Freescale Semiconductor
C1
COAX1
C15
C16
C17
C19C18
+
+
B1
C3
R1
L1
C2
MRFE6VP61K25H Rev. 1
Note: Component numbers C6, C13 and
C14 are not used.
T1
L2
L3
CUT OUT AREA
C4
L4
L5
C22
COAX2
C11
C24
C23
COAX3
C7
C8
C9
C10
C12
+
C21C20
C5
+
Figure 7. FM Broadcast Reference Design Component Layout
Table 4. FM Broadcast Reference Design Component Designations and Values