Communication Concepts FM-1KW User Manual

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Freescale Semiconductor

Technical Data

 REFERENCE DESIGN IN 1st REVIEW -- 06/03/11

Available at http://www.freescale.com. Go to Support/Software & Tools/

Additional Resources/Reference Designs/Networking

Rev . 1.1, 6/2011

RF Power Reference Design Library

FM Broadcast Reference Design

High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

Reference Design Characteristics

The MRFE6VP61K25H/HS are versatile devices and are well suited for a wide range of applications. They are capable of delivering 1.2 kW under continuous wave test signaling as a result of their high efficiency and low thermal resistance. This document focuses on FM broadcast radio applications for both analog and complex modulation waveforms.

 Frequency Band: 87.5--108 MHz  Output Power: 1100 Watts CW  Supply Voltage: 50 Vdc  Power Gain (Typ): 25 dB  Drain Efficiency (Min): 79% (at fundamental frequency)

The MRFE6VP61K25H/HS products are enhanced ruggedness 50 volt LDMOS power transistors that can operate in harsh environments and in highly mismatched applications (within the limit of maximum junction temperature). These parts are designed for high voltage operation and are fabricated using Freescale’s very high voltage 6th generation (VHV6E) platform.

MRFE6VP61K25H

MRFE6VP61K25HS

FM Broadcast

87.5--108 MHz, 1100 W CW, 50 V FM BROADCAST

REFERENCE DESIGN

BIAS

OUTPUT

BIAS

INPUT

M=Match

BIAS

FM BROADCAST REFERENCE DESIGN

This reference design is designed to demonstrate the RF performance characteristics of the MRFE6VP61K25H/HS devices when applied to the 87.5--108 MHz FM broadcast frequency band. The reference design is tuned for performance at 1100 watts CW output power, V and IDQ= 200 mA.

=50volts

REFERENCE DESIGN LIBRARY TERMS

AND CONDITIONS

Freescale is pleased to make this reference design available for your use in development and testing of your

own product or products. The reference design contains an easy--to--copy, fully functional amplifier design. It consists of “no tune” distributed element matching circuits designed to be as small as possible, and is designed to be used as a “building block” by our customers.

HEATSINKING

When operating this fixture it is critical that adequate heatsinking is provided for the device. Excessive heating of the device may prevent duplication of the included measurements and/or destruction of the device.

Figure 1. FM Broadcast Reference Design Fixture

RF Reference Design Data Freescale Semiconductor

MRFE6VP61K25H MRFE6VP61K25HS FM Broadcast

MEASUREMENTS

f = 108 MHz

108 MHz



87.5 MHz

98 MHz



, POWER GAIN (dB)

VDD=50V I

= 200 mA

87.5 MHz 98 MHz

300 500 700 1100

200 400 600 800 900 1000

100

, OUTPUT POWER (WATTS)

out

Air--Cooled, CW, 87.5--108 MHz, Low Pass Filter

Figure 2. Continuous Wave Performance Graph

with Low Pass Filter versus Output Power

1200

, POWER GAIN (dB)

DRAIN EFFICIENCY (%)



out

= 1100 W =50V

= 200 mA

88 92 96 100 102 104

f, FREQUENCY (MHz)

Air--Cooled, CW, 87.5--108 MHz, Low Pass Filter

Figure 3. Continuous Wave Performance Graph

with Low Pass Filter versus Frequency

Table 1. CW Drive--Up at 87.5 MHz

(W)

0.3 150 27.0 -- 6 . 1 33.6 50 8.9 0.2

0.5 314 28.0 -- 6 . 5 48.0 50 13.1 0.2

1.0 639 28.1 -- 8 . 1 65.8 50 19.4 0.2

1.5 844 27.5 -- 10.1 72.6 50 23.2 0.2

2.0 975 26.9 -- 1 1 . 9 76.1 50 25.6 0.2

2.5 1056 26.3 --13.0 78.1 50 27.0 0.2

3.0 1100 25.6 --13.3 79.1 50 27.8 0.2

3.5 111 6 25.0 -- 13.6 79.2 50 28.2 0.2

(W)

out

Gain

(dB)

IRL

(dB)

Eff

(%)

(V)

I (A)

Table 2. CW Drive--Up at 98 MHz

(W)

0.3 168 27.5 -- 1 1 . 0 36.8 50 9.1 0.2

0.5 343 28.4 -- 1 1 . 8 52.0 50 13.2 0.2

1.0 660 28.2 -- 14.9 68.5 50 19.3 0.2

1.5 864 27.6 -- 19.4 75.3 50 22.9 0.2

2.0 999 27.0 -- 22.4 78.7 50 25.4 0.2

2.5 1058 26.3 --22.0 80.1 50 26.4 0.2

3.0 1085 25.6 --22.0 80.2 50 27.0 0.2

3.5 1094 24.9 --22.6 80.4 50 27.2 0.2

(W)

out

Gain

(dB)

IRL

(dB)

Eff

(%)

(V)

I (A)

Table 3. CW Drive--Up at 108 MHz

(W)

0.3 193 28.1 -- 14.2 40.9 50 9.4 0.2

0.5 377 28.8 -- 14.9 56.1 50 13.4 0.2

1.0 695 28.4 -- 15.6 72.9 50 19.1 0.2

1.5 881 27.7 -- 13.5 78.6 50 22.4 0.2

2.0 980 26.7 -- 14.1 79.2 50 22.9 0.2

2.5 1018 26.1 --12.2 81.6 50 24.9 0.2

3.0 1066 25.5 -- 11 . 8 82.4 50 25.9 0.2

3.5 1092 24.9 -- 11 . 8 82.7 50 26.4 0.2

1. IDQis set by adjusting a variable gate--source voltage while maintaining a constant 50 volts at the drain.

(W)

out

Gain

(dB)

IRL

(dB)

Eff

(%)

(V)

I (A)

108

DRAIN EFFICIENCY (%)



11090 94 98 106

(1)

(A)

(1)

(A)

(1)

(A)

MRFE6VP61K25H MRFE6VP61K25HS FM Broadcast

RF Reference Design Data

Freescale Semiconductor

AMPLIFIER DESIGN

MATCHING NETWORK

As a first order approximation, the typical maximum efficiency impedance point corresponds to a 25% power degradation from the maximum P3dB impedance. The maximum output power impedance value on this device corresponds to a 1.25 kW output capability from

87.5--108 MHz. This puts the targeted P1dB compression value at 800 watts of output power total, or 400 watts per side. The initial load impedance is determined using the following equation:

out

)

(0.85  50 V)

(2  400 W)

(0.85  VDD)

(2  P

R (drain to drain) = 2.25  x2=4.5

The coaxial transformer turns ratio was chosen to meet this required impedance level and the length of the coax (series inductance) was tuned to attain maximum efficiency and maximum power transfer between the device and its complex conjugate test fixture load impedance.

=2.25

FIXTURE IMPEDANCE

VDD=50Vdc,IDQ= 200 mA, P

MHz

87.5 2.20 + j6.70 4.90 + j2.90

98 2.30 + j6.90 4.10 + j2.50

108 2.30 + j7.00 4.40 + j3.60

= Test circuit impedance as measured from

source

= Test circuit impedance as measured from

load

Input Matching Network

source



gate to gate, balanced configuration.

drain to drain, balanced configuration.

Device Under

Tes t

-- +

source

Figure 4. Series Equivalent Source and Load

Impedance

= 1100 W CW

out

load



Output Matching Network

RF Reference Design Data Freescale Semiconductor

Figure 5. FM Broadcast Reference Design Fixture Impedance

MRFE6VP61K25H MRFE6VP61K25HS FM Broadcast

CIRCUIT DESCRIPTION

INPUT

C15 C16 C17 C19 C18

COAX1

COAX3

OUTPUT

COAX2

C22 C23 C24 C21 C20

Figure 6. FM Broadcast Reference Design Schematic Diagram

MRFE6VP61K25H MRFE6VP61K25HS FM Broadcast

C10

C11

C12

RF Reference Design Data

Freescale Semiconductor

COAX1

C15

C16

C17

C19 C18

MRFE6VP61K25H Rev. 1

Note: Component numbers C6, C13 and

C14 are not used.

CUT OUT AREA

C22

COAX2

C11

C24

C23

COAX3

C7 C8 C9

C10

C12

C21 C20

Figure 7. FM Broadcast Reference Design Component Layout

Table 4. FM Broadcast Reference Design Component Designations and Values

Part Description Part Number Manufacturer

B1 Long Ferrite Bead 2743021447 Fair--Rite

C2 27 pF Chip Capacitor ATC100B270JT500XT ATC

C3, C7, C8, C9, C10, C11, C12

C4 39 pF Mica Capacitor MIN02--002DC390J--F Cornell Dubilier

C5 3 pF Chip Capacitor ATC100B3R0CT500XT ATC

C15, C22 10K pF Chip Capacitors ATC200B103KT500XT ATC

C16, C23 1 F, 100 V Chip Capacitors C3225JB2A105KT TDK

C17, C24 10 F, 100 V Chip Capacitors C5750X7S2A106MT TDK

C18, C19, C20, C21 470 F, 63 V Electrolytic Capacitors 477KXM063M Illinois Capacitor

L1 39 nH Inductor 1812SMS--39NJLC Coilcraft

L2, L3 2.5 nH Inductors A01TKLC Coilcraft

L4, L5 7 Turn, #16 AWG, ID = 0.3 Inductors Copper Wire

R1 11 , 1/4 W Chip Resistor CRCW120611R0FKEA Vishay

T1 Balun TUI--9 Comm Concepts

Coax1, Coax2 Flex Cables, 12 ,5.9 TC--12 Comm Concepts

Coax3 Coax Cable, Quickform 50 ,8.7 SUCOFORM 250--01 Huber+Suhner

PCB* 0.030, r=3.5 TC--350 Arlon

Heatsink NI--1230 Copper Heatsink C193X280T970 Machine Shop

6.8 F, 50 V Chip Capacitor C4532X7R1H685K TDK

1000 pF Chip Capacitors ATC100B102JT50XT ATC

*PCB artwork for this reference design is available at http://freescale.com/RFbroadcast > Design Support > Reference Designs.

Note: See Appendix A for Tuning Tips.

MRFE6VP61K25H MRFE6VP61K25HS FM Broadcast

RF Reference Design Data Freescale Semiconductor

FREESCALE RF POWER 50 V TECHNICAL ADVANTAGES

50 V Drain Voltage

The 87.5--108 MHz FM broadcast reference design fixture was designed to utilize the standard 50 volt power supply commonly used in this market.

Data was collected to characterize the reference design’s output power and efficiency vs. drain voltage, as shown in Figure 8. The output power can be adjusted over a 12 dB worth of dynamic range by adjusting the drain voltage, while creating minimal degradation on the efficiency performance.

Refer to Freescale’s 50 V RF LDMOS White Paper.Goto http://freescale.com/RFpower

and select Documentation/White Papers -- 50VRFLDMOSWP for more information on 50 V RF LDMOS technology.

1200

1000

, OUTPUT POWER (WATTS)

out

800

600

400

200

Pin=3.5W f=98MHz I

= 200 mA



out

20 30 40 50515253545

, DRAIN VOLTAGE (VOLTS)

Figure 8. Output Power and Drain Efficiency

versus Drain Voltage

Extended Gate Voltage Range

The enhanced electrostatic discharge (ESD) protection structure at the gate of the transistor is a Freescale innovation pioneered in the cellular infrastructure market that is incorporated into the 50 volts RF LDMOS power product portfolios. This ESD structure can tolerate moderate reverse bias conditions, applied to the gate lead, up to --6 volts as shown in Figure 9. This allows these transistors to be used in zero gate voltage, Class C bias applications where the RF voltage swings on the gate can be significantly lower than the ground potential.

2.E--02

1.E--02

5.E--03

(A)

0.E+00

ESD

-- 5 . E -- 0 3

-- 1 . E -- 0 2

-- 2 . E -- 0 2

-- 1 5 0--10 --5 5 10 15 20 25

2.E--02

1.E--02

5.E--03

(A)

0.E+00

ESD

-- 5 . E -- 0 3

-- 1 . E -- 0 2

-- 2 . E -- 0 2

-- 1 5 0--10 --5 5 10 15 20 25

Enhanced ESD

(V)

Standard ESD

(V)

Figure 9. Gate Voltage Breakdown with ESD

DRAIN EFFICIENCY (%)



High Ruggedness/Energy Absorption

The MRFE6VP61K25H/HS was designed to operate in applications which demand very high ruggedness. The VHV6E technology has proven to be valuable in FM broadcast applications, specifically in high definition (HD) FM transmitters where a high peak--to--average (PAR) digital signal is injected on top of an existing analog FM signal. At the peak of the signal, the voltage waveform could exceed the V

(BR)DSS

the device to enter into an avalanche condition. However, for the device to fail, the current must be sufficiently high enough during the high voltage period to activate the internal parasitic bipolar transistor buried beneath the active field--effect transistor (FET) structure.

An Integrated Technologies Corporation’s Unclamped Inductive Load Tester, model #ITC55100B, was used to measure the maximum energy dissipation capability of the device under these high current and high voltage test conditions.

breakdown voltage of the device and thus cause

MRFE6VP61K25H MRFE6VP61K25HS FM Broadcast

RF Reference Design Data

Freescale Semiconductor

Figure 10 shows the internal diagram of the ITC55100B tester. The tester controller activates the pulse generator to turn on the device under test (DUT) through the limiting and terminating resistor, R

, creating a very clean gate pulse

waveform. This pulse waveform tests the maximum energy dissipation capability of the DUT by stressing it under various, controlled energy levels. This is accomplished by attaching an unclamped inductive load to the device’s drain and source connection and then increasing both the load current and load voltage up until the point that the DUT

Controller

Measurement

Pulse

Generator

Kelvin

Isolator

50 

failure is achieved. Using this test method for power devices ensures proper operation in circuits used to drive inductive loads that may possibly cause an avalanche mode stress on the DUT. The final maximum energy dissipation capability rating, in joules, is calculated by the following equation:

1 2

 L  I

where L is the load inductance value and I is the peak current within the load inductor.

Monitor

DUT

High Speed

Switch

Freewheeling

Diode

Figure 10. Internal Diagram of the ITC55100B Tester

The highest energy level the MRFE6VP61K25H/HS device passed is shown in Figure 11. During the course of this testing, the device dissipated over 5.77 joules of energy over a discharge time of 859 sec, while reaching a

maximum current of 76 A and a maximum voltage of 197 volts. (These load voltage and current values are taken under short discharge durations to keep the thermal dissipation issues out of the ruggedness equation.)

 Max Voltage = 196.8 Vdc  End Voltage = 167.5 Vdc  Energy = 5.766 J (full device)  ID

peak

=76A

RF Reference Design Data Freescale Semiconductor

Figure 11. Voltage and Current Curves During Energy Discharge

MRFE6VP61K25H MRFE6VP61K25HS FM Broadcast

Reliability

Mean time to failure (MTTF) is defined as a 10% reduction in current handling capability on 50% of the devices within a given sample size. The primary factor in device failure is due to metal electromigration on the die surface. Once the average operating conditions for a given application are determined, then the MTTF can be calculated using the thermal resistance R product data sheet.

Example: If the desired operating output power is 1100 W, with 80% drain efficiency.

 I

= 1100 W / (80%  50 V) ~ 27.5 A

Drain

 MRFE6VP61K25H Rth=0.15C/W, case temperature =

80C

 Dissipated power = P  Dissipated power = 50 V  27.5 A -- 1100 W + 4 W = 279 W  Temperature rise = 279 W  0.15C/W = 42C  T

J=Trise+TC

Utilizing Figure 12 which calculates MTTF versus I and TJ;I

100000

10000

1000

= 27.5 A, MTTF for this example is 2700 years.

Drain

32 Amp

value given in the MRFE6VP61K25H

-- P

out+Pin

=42C+80C = 122C

24 Amp

Drain

87.5 MHz, 1100 W CW, 79% Drain Efficiency

100

MTTF (YEARS)

110 130 150 170 190

28 Amp

, JUNCTION TEMPERATURE (C)

210 230

250

Figure 12. MTTF versus Junction Temperature

THERMAL MEASUREMENTS

Thermal images of the MRFE6VP61K25H FM broadcast reference circuit were taken using a FLIR Infrared(IR) T360 camera. The hottest point observed was located at the Coax1 and Coax2 junction point with the C4 mica capacitor at 108 MHz. The recorded temperature was 100C after 10 minutes of operation to reach steady state temperature. Due to the high efficiency achieved by the FM broadcast reference fixture, the overall baseplate temperature remains relatively cool at around 60C, with forced air cooling at 25C.

98 MHz, 1100 W CW, 78% Drain Efficiency

108 MHz, 1100 W CW, 80% Drain Efficiency

Figure 13. IR Images of the Output Matching Network

MRFE6VP61K25H MRFE6VP61K25HS FM Broadcast

RF Reference Design Data

Freescale Semiconductor

APPENDIX A

Tuning Tips

 Increasing C4 increases efficiency at the low end of the

band (87.5 MHz), but there is a trade--off in power at the high end of the band.

 Increasing the length of Coax3 increases efficiency at the

low end of the band (87.5 MHz), but there is a trade off in efficiency and power at the high end of the band.

 Make sure all the coax are measured tip to tip.  Increasing C5 increases the power, but lowers efficiency.

RF Reference Design Data Freescale Semiconductor

MRFE6VP61K25H MRFE6VP61K25HS FM Broadcast

APPENDIX B

Mounting Tips

The MRFE6VP61K25H/HS is packaged in the industry standard NI--1230 air cavity package which offers a standardized package for easy replacement drop in as well as outstanding thermal performance.

This package can be assembled into a power amplifier system using several different mounting methods. The popular options include bolting down with screw, clamping and reflow soldering in a cavity. Freescale recommends solder reflow. If customer desires to clamp the device, special care needs to be taken due to cavity style packages.

One of the key advantages to solder mounting includes a superior source contact--to--heatsink interface that provides for lower thermal resistance as well as better electrical grounding, which means that high power RF devices such as the MRFE6VP61K25H/HS parts will have a lower junction temperature and better RF performance when compared to all other mounting options. Lowering the junction temperature of the device also increase the MTTF (Mean Time to Failure), as shown in Figure 8, MTTF versus Junction Temperature.

Refer to AN1908 Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages.Goto http://freescale.com/RFpower Application Notes -- AN1908 for more information on solder reflow attach method.

and select Documentation/

MRFE6VP61K25H MRFE6VP61K25HS FM Broadcast

RF Reference Design Data

Freescale Semiconductor

APPENDIX C

RF Bench Setup/Continuous Wave Performance (CW)

PinN1912 Channel A

with

10 dB Attenuator

Narda Model 31993

50--1000 MHz Coupler

Power Reflected

HP437

with

10 dB Attenuator

DUTESG Generator

Figure 14. RF Bench Setup

Tenuline Coaxial

Attenuator

Model (8329--300)

30 dB Attenuator

+19 dB additional

DC to 3 GHz

150 MHz

LPF

Power Meter

N1912

Channel B

RF Reference Design Data Freescale Semiconductor

MRFE6VP61K25H MRFE6VP61K25HS FM Broadcast

APPENDIX D

Copper Heatsink for FM Broadcast Fixture

#4--40

0.300 deep

2.737 (69.51)

1.929 (48.98)

0.41 (10.41)

4.548 (115.52)

2.882 (73.19)

2.719 (69.07)

1.813 (46.04)

0.813 (20.64)

0.140 (3.56)

0.125 (3.17)

0.000 (0.00)

0.00 (0.00)

0.177 (4.50)

0.929 (23.59)

1.558 (39.58)

1.724 (43.78)

2.134 (54.19)

1.929 (48.99)

0.038 (0.97)

2.929 (74.38)

2.283 (57.98)

C, Device Channel

D A

A D

4.499 (114.28)

4.725 (120.02)

0.300 (7.62)

0.720 (18.29)

2.011 (51.08)

1.309 (33.26)

0.611 (15.52)

0.130 (3.32)

0.000 (0.00)

0 (0.00)

0.000 (0.00)

0.128 (3.25)

1.668 (42.38)

1.489 (37.83)

0.188 (4.76)

1.129 (28.69)

0.950 (24.14)

0.324 (8.23)

inches (mm)

Gutter is 0.030 wide and 0.046 deep, both

0.929 (23.59) sides

0.720 Copper Heatsink Hole Details

Designators

A 2 places, both sides, drill and tap, #2--56 screw depth 0.300

B 2 places, both sides, 0.1875 diameter notch 0.020 deep

C NI--1230 channel 0.410 wide by 0.0380 deep

D 2 places, both sides, drill depth 0.250 and tap for #4--40 screw

E Locator holes from bottom diameter = 0.257, depth = 0.400

F 2 places, drill through and tap for #4--40 screw

Figure 15. NI--1230 Heatsink

MRFE6VP61K25H MRFE6VP61K25HS FM Broadcast

2.929 (74.39)

Details

RF Reference Design Data

Freescale Semiconductor

REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

1 May 2011  Table 4, Component Designations and Values, updated C17, C24 capacitor from “50 V,

1.1 June 2011  Content flow restructured

GRM55DR61H106KA88L, Murata” to “100 V, C5750X7S2A106MT, TDK”, 100 V part provides higher breakdown voltage capability. Corrected R1 part number from “CRCW1206110FKEA” to CRCW120611R0FKEA”. For Coax1, 2, 3, in description changed cm to inches, p. 4.

RF Reference Design Data Freescale Semiconductor

MRFE6VP61K25H MRFE6VP61K25HS FM Broadcast

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Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur . Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part.

Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners.  Freescale Semiconductor, Inc. 2011. All rights reserved.

MRFE6VP61K25H MRFE6VP61K25HS FM Broadcast

Available at http://www.freescale.com. Go to Support/Software & Tools/ Additional Resources/Reference Designs/Networking

Rev. 1.1, 6/2011

RF Reference Design Data

Freescale Semiconductor

Communication Concepts FM-1KW User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual