Communication Concepts FM-1KW User Manual

Freescale Semiconductor
Technical Data
REFERENCE DESIGN IN 1st REVIEW -- 06/03/11
Available at http://www.freescale.com. Go to Support/Software & Tools/
Additional Resources/Reference Designs/Networking
Rev . 1.1, 6/2011
RF Power Reference Design Library
FM Broadcast Reference Design
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
The MRFE6VP61K25H/HS are versatile devices and are well suited for a wide range of applications. They are capable of delivering 1.2 kW under continuous wave test signaling as a result of their high efficiency and low thermal resistance. This document focuses on FM broadcast radio applications for both analog and complex modulation waveforms.
Frequency Band: 87.5--108 MHzOutput Power: 1100 Watts CWSupply Voltage: 50 VdcPower Gain (Typ): 25 dBDrain Efficiency (Min): 79% (at fundamental frequency)
The MRFE6VP61K25H/HS products are enhanced ruggedness 50 volt LDMOS power transistors that can operate in harsh environments and in highly mismatched applications (within the limit of maximum junction temperature). These parts are designed for high voltage operation and are fabricated using Freescale’s very high voltage 6th generation (VHV6E) platform.
MRFE6VP61K25H
MRFE6VP61K25HS
FM Broadcast
87.5--108 MHz, 1100 W CW, 50 V FM BROADCAST
REFERENCE DESIGN
V
DD
BIAS
M
OUTPUT
+
-
M
BIAS
V
DD
RF
INPUT
M=Match
V
GG
BIAS
M
­+
M
BIAS
V
GG
RF
FM BROADCAST REFERENCE DESIGN
This reference design is designed to demonstrate the RF performance characteristics of the MRFE6VP61K25H/HS devices when applied to the 87.5--108 MHz FM broadcast frequency band. The reference design is tuned for performance at 1100 watts CW output power, V and IDQ= 200 mA.
=50volts
DD
REFERENCE DESIGN LIBRARY TERMS
AND CONDITIONS
Freescale is pleased to make this reference design available for your use in development and testing of your
own product or products. The reference design contains an easy--to--copy, fully functional amplifier design. It consists of “no tune” distributed element matching circuits designed to be as small as possible, and is designed to be used as a “building block” by our customers.
HEATSINKING
When operating this fixture it is critical that adequate heat­sinking is provided for the device. Excessive heating of the device may prevent duplication of the included measurements and/or destruction of the device.
Figure 1. FM Broadcast Reference Design Fixture
Freescale Semiconductor, Inc., 2011.All rights reserved.
RF Reference Design Data Freescale Semiconductor
MRFE6VP61K25H MRFE6VP61K25HS FM Broadcast
1
MEASUREMENTS
31
30
29
28
f = 108 MHz
108 MHz
D
87.5 MHz
98 MHz
90
80
70
32
30
D
28
60
26
27
, POWER GAIN (dB)
ps
26
G
25
VDD=50V I
DQ
= 200 mA
87.5 MHz 98 MHz
G
ps
24
300 500 700 1100
200 400 600 800 900 1000
100
, OUTPUT POWER (WATTS)
P
out
Air--Cooled, CW, 87.5--108 MHz, Low Pass Filter
Figure 2. Continuous Wave Performance Graph
with Low Pass Filter versus Output Power
1200
50
24
, POWER GAIN (dB)
DRAIN EFFICIENCY (%)
40
30
20
ps
G
D,
22
P
out
V
DD
I
DQ
= 1100 W =50V
= 200 mA
20
88 92 96 100 102 104
86
G
ps
f, FREQUENCY (MHz)
Air--Cooled, CW, 87.5--108 MHz, Low Pass Filter
Figure 3. Continuous Wave Performance Graph
with Low Pass Filter versus Frequency
Table 1. CW Drive--Up at 87.5 MHz
P
in
(W)
0.3 150 27.0 -- 6 . 1 33.6 50 8.9 0.2
0.5 314 28.0 -- 6 . 5 48.0 50 13.1 0.2
1.0 639 28.1 -- 8 . 1 65.8 50 19.4 0.2
1.5 844 27.5 -- 10.1 72.6 50 23.2 0.2
2.0 975 26.9 -- 1 1 . 9 76.1 50 25.6 0.2
2.5 1056 26.3 --13.0 78.1 50 27.0 0.2
3.0 1100 25.6 --13.3 79.1 50 27.8 0.2
3.5 111 6 25.0 -- 13.6 79.2 50 28.2 0.2
P
(W)
out
Gain
(dB)
IRL
(dB)
Eff
(%)
V
(V)
DD
I (A)
Table 2. CW Drive--Up at 98 MHz
P
in
(W)
0.3 168 27.5 -- 1 1 . 0 36.8 50 9.1 0.2
0.5 343 28.4 -- 1 1 . 8 52.0 50 13.2 0.2
1.0 660 28.2 -- 14.9 68.5 50 19.3 0.2
1.5 864 27.6 -- 19.4 75.3 50 22.9 0.2
2.0 999 27.0 -- 22.4 78.7 50 25.4 0.2
2.5 1058 26.3 --22.0 80.1 50 26.4 0.2
3.0 1085 25.6 --22.0 80.2 50 27.0 0.2
3.5 1094 24.9 --22.6 80.4 50 27.2 0.2
P
(W)
out
Gain
(dB)
IRL
(dB)
Eff
(%)
V
(V)
DD
I (A)
Table 3. CW Drive--Up at 108 MHz
P
in
(W)
0.3 193 28.1 -- 14.2 40.9 50 9.4 0.2
0.5 377 28.8 -- 14.9 56.1 50 13.4 0.2
1.0 695 28.4 -- 15.6 72.9 50 19.1 0.2
1.5 881 27.7 -- 13.5 78.6 50 22.4 0.2
2.0 980 26.7 -- 14.1 79.2 50 22.9 0.2
2.5 1018 26.1 --12.2 81.6 50 24.9 0.2
3.0 1066 25.5 -- 11 . 8 82.4 50 25.9 0.2
3.5 1092 24.9 -- 11 . 8 82.7 50 26.4 0.2
1. IDQis set by adjusting a variable gate--source voltage while maintaining a constant 50 volts at the drain.
P
(W)
out
Gain
(dB)
IRL
(dB)
Eff
(%)
V
(V)
DD
I (A)
DD
DD
DD
108
90
80
70
60
50
DRAIN EFFICIENCY (%)
D,
40
30
11090 94 98 106
(1)
I
DQ
(A)
(1)
I
DQ
(A)
(1)
I
DQ
(A)
MRFE6VP61K25H MRFE6VP61K25HS FM Broadcast
2
RF Reference Design Data
Freescale Semiconductor
AMPLIFIER DESIGN
MATCHING NETWORK
As a first order approximation, the typical maximum efficiency impedance point corresponds to a 25% power degradation from the maximum P3dB impedance. The maximum output power impedance value on this device corresponds to a 1.25 kW output capability from
87.5--108 MHz. This puts the targeted P1dB compression value at 800 watts of output power total, or 400 watts per side. The initial load impedance is determined using the following equation:
out
2
=
)
(0.85 50 V)
(2 400 W)
(0.85  VDD)
R=
(2  P
R (drain to drain) = 2.25 x2=4.5
The coaxial transformer turns ratio was chosen to meet this required impedance level and the length of the coax (series inductance) was tuned to attain maximum efficiency and maximum power transfer between the device and its complex conjugate test fixture load impedance.
2
=2.25
FIXTURE IMPEDANCE
VDD=50Vdc,IDQ= 200 mA, P
f
MHz
87.5 2.20 + j6.70 4.90 + j2.90
98 2.30 + j6.90 4.10 + j2.50
108 2.30 + j7.00 4.40 + j3.60
Z
= Test circuit impedance as measured from
source
= Test circuit impedance as measured from
Z
load
Input Matching Network
Z
source
gate to gate, balanced configuration.
drain to drain, balanced configuration.
Device Under
+
Tes t
-- +
Z
source
Figure 4. Series Equivalent Source and Load
Impedance
= 1100 W CW
out
--
Z
load
Z
load
Output Matching Network
RF Reference Design Data Freescale Semiconductor
Figure 5. FM Broadcast Reference Design Fixture Impedance
MRFE6VP61K25H MRFE6VP61K25HS FM Broadcast
3
CIRCUIT DESCRIPTION
C1
C3
V
GS
B1
R1
RF
INPUT
T1
L1
C2
C15 C16 C17 C19 C18
B2
COAX1
C4
L2
L3
V
DD
C7
C8
C9
COAX3
RF
OUTPUT
COAX2
B3
C22 C23 C24 C21 C20
Figure 6. FM Broadcast Reference Design Schematic Diagram
MRFE6VP61K25H MRFE6VP61K25HS FM Broadcast
4
C10
C11
C12
C5
V
DD
RF Reference Design Data
Freescale Semiconductor
C1
COAX1
C15
C16
C17
C19 C18
+
+
B1
C3
R1
L1
C2
MRFE6VP61K25H Rev. 1
Note: Component numbers C6, C13 and
C14 are not used.
T1
L2
L3
CUT OUT AREA
C4
L4
L5
C22
COAX2
C11
C24
C23
COAX3
C7 C8 C9
C10
C12
+
C21 C20
C5
+
Figure 7. FM Broadcast Reference Design Component Layout
Table 4. FM Broadcast Reference Design Component Designations and Values
Part Description Part Number Manufacturer
B1 Long Ferrite Bead 2743021447 Fair--Rite
C1
C2 27 pF Chip Capacitor ATC100B270JT500XT ATC
C3, C7, C8, C9, C10, C11, C12
C4 39 pF Mica Capacitor MIN02--002DC390J--F Cornell Dubilier
C5 3 pF Chip Capacitor ATC100B3R0CT500XT ATC
C15, C22 10K pF Chip Capacitors ATC200B103KT500XT ATC
C16, C23 1 F, 100 V Chip Capacitors C3225JB2A105KT TDK
C17, C24 10 F, 100 V Chip Capacitors C5750X7S2A106MT TDK
C18, C19, C20, C21 470 F, 63 V Electrolytic Capacitors 477KXM063M Illinois Capacitor
L1 39 nH Inductor 1812SMS--39NJLC Coilcraft
L2, L3 2.5 nH Inductors A01TKLC Coilcraft
L4, L5 7 Turn, #16 AWG, ID = 0.3Inductors Copper Wire
R1 11 , 1/4 W Chip Resistor CRCW120611R0FKEA Vishay
T1 Balun TUI--9 Comm Concepts
Coax1, Coax2 Flex Cables, 12 ,5.9 TC--12 Comm Concepts
Coax3 Coax Cable, Quickform 50 ,8.7 SUCOFORM 250--01 Huber+Suhner
PCB* 0.030, r=3.5 TC--350 Arlon
Heatsink NI--1230 Copper Heatsink C193X280T970 Machine Shop
6.8 F, 50 V Chip Capacitor C4532X7R1H685K TDK
1000 pF Chip Capacitors ATC100B102JT50XT ATC
*PCB artwork for this reference design is available at http://freescale.com/RFbroadcast > Design Support > Reference Designs.
Note: See Appendix A for Tuning Tips.
MRFE6VP61K25H MRFE6VP61K25HS FM Broadcast
RF Reference Design Data Freescale Semiconductor
5
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