Communication Concepts 2N6488 User Manual

2N6487, 2N6488, (NPN)
2N6490, 2N6491 (PNP)

Complementary Silicon
Plastic Power Transistors

These devices are designed for use in general−purpose amplifier and

switching applications.

Features

• DC Current Gain Specified to 15 Amperes −

h

= 20−150 @ IC = 5.0 Adc

FE

= 5.0 (Min) @ I

• Collector−Emitter Sustaining Voltage −

V

CEO(sus)

= 60 Vdc (Min) − 2N6487, 2N6490
= 80 Vdc (Min) − 2N6488, 2N6491

• High Current Gain − Bandwidth Product

f

= 5.0 MHz (Min) @ IC = 1.0 Adc

T

• TO−220AB Compact Package

• Pb−Free Packages are Available*

MAXIMUM RATINGS (Note 1)

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage V

Collector Current − Continuous I

Base Current I

Total Power Dissipation @ TC = 25_C
Derate above 25_C

Total Power Dissipation @ TA = 25_C
Derate above 25_C

Operating and Storage Junction
Temperature Range

THERMAL CHARACTERISTICS

Characteristics Symbol Max Unit

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC Registered Data.

2N6487, 2N6490
2N6488, 2N6491

2N6487, 2N6490
2N6488, 2N6491

= 15 Adc

C

Symbol Value Unit

V

CEO

V

P

P

TJ, T

R

R

CB

EB

C

B

D

D

−65 to +150 °C

stg

q

JC

q

JA

60
80

70
90

5.0 Vdc

15 Adc

5.0 Adc

75

0.6

1.8

0.014

1.67

70

Vdc

Vdc

W

W/°C

W

W/°C

_C/W

_C/W

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15 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60−80 VOLTS, 75 WATTS

MARKING
DIAGRAM

4

TO−220AB

CASE 221A

STYLE 1

1

2

3

2N64xx = Specific Device Code
xx = See Table on Page 5
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week

ORDERING INFORMATION

See detailed ordering, marking, and shipping information in
the package dimensions section on page 5 of this data sheet.

2N64xxG

AYWW

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2011

October, 2011 − Rev. 14

1 Publication Order Number:

2N6487/D

2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP)

T

ATC

80

4.0

3.0

60

T

C

40

, POWER DISSIPATION (WATTS)

D

P

2.0

20

1.0

0

0

20 40 80 100 120 160

0 60 140

T

A

TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted) (Note 2)

C

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 3)

(I

= 200 mAdc, IB = 0) 2N6487, 2N6490

C

2N6488, 2N6491

Collector−Emitter Sustaining Voltage (Note)

(I

= 200 mAdc, VBE = 1.5 Vdc) 2N6487, 2N6490

C

2N6488, 2N6491

Collector Cutoff Current

(V

= 30 Vdc, IB = 0) 2N6487, 2N6490

CE

(VCE = 40 Vdc, IB = 0) 2N6488, 2N6491

Collector Cutoff Current

(VCE = 65 Vdc, V
(VCE = 85 Vdc, V

= 60 Vdc, V

(V

CE

= 80 Vdc, V

(V

CE

= 1.5 Vdc) 2N6487, 2N6490

EB(off)

= 1.5 Vdc) 2N6488, 2N6491

EB(off)

= 1.5 Vdc, TC = 150_C) 2N6487, 2N6490

EB(off)

= 1.5 Vdc, TC = 150_C) 2N6488, 2N6491

EB(off)

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS

DC Current Gain

(I

= 5.0 Adc, VCE = 4.0 Vdc)

C

(IC = 15 Adc, VCE = 4.0 Vdc)

Collector−Emitter Saturation Voltage

(I

= 5.0 Adc, IB = 0.5 Adc)

C

(IC = 15 Adc, IB = 5.0 Adc)

Base−Emitter On Voltage

(I

= 5.0 Adc, VCE = 4.0 Vdc)

C

(IC = 15 Adc, VCE = 4.0 Vdc)

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product (Note 4)

(I

= 1.0 Adc, VCE = 4.0 Vdc, f

C

= 1.0 MHz)

test

Small−Signal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)

2. Indicates JEDEC Registered Data.

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
= |hfe| • f

4. f

T

test

Symbol

V

CEO(sus)

V

CEX

I

CEO

I

CEX

I

EBO

h

FE

V

CE(sat)

V

BE(on)

f

T

h

fe

Min

60
80

70
90

−

−

−

−

−

−

−

20

5.0

−

−

−

−

5.0

25

Max

−

−

−

−

1.0

1.0

500
500

5.0

5.0

1.0

150

−

1.3

3.5

1.3

3.5

−

−

Unit

Vdc

Vdc

mAdc

mAdc

mAdc

−

Vdc

Vdc

MHz

−

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2

2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP)

V

CC

+ 30 V

25 ms

+ 10 V

R

0

- 10 V

, tf v 10 ns

t

r

DUTY CYCLE = 1.0%

B

51

D

1

- 4 V

RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.
FOR PNP, REVERSE ALL POLARITIES.

D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE I
MSD6100 USED BELOW I

[ 100 mA

B

[ 100 mA

B

Figure 2. Switching Time Test Circuit

1000

500

200

100

t, TIME (ns)

50

20

10

0.2 20

NPN
PNP

TC = 25°C
V

= 30 V

CC

= 10

I

C/IB

0.5 2.0 10

1.0 5.0

IC, COLLECTOR CURRENT (AMP)

t

r

td @ V

BE(off)

[ 5.0 V

R

C

SCOPE

1.0

0.7

0.5

0.3

0.2

0.1

0.07

(NORMALIZED)

0.05

0.03

0.02

r(t), TRANSIENT THERMAL RESISTANCE

0.01

0.01

Figure 3. Turn−On Time

D = 0.5

0.2

0.1

P

0.05

0.02

0.01
SINGLE PULSE

Z

(t) = r(t) R

q

JC

R

q

JC

q

JC

= 1.67°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T

- TC = P

J(pk)

(pk)

1

Z

q

JC(t)

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k500

t, TIME (ms)

Figure 4. Thermal Response

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3

2

2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP)

20

10

5.0

2.0
TJ = 150°C

1.0

0.5

, COLLECTOR CURRENT (AMP)

C

I

0.2

0.1

2.0 604.0

SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C

CURVES APPLY BELOW RATED V

2N6487, 2N6490
2N6488, 2N6491

10 20 80

V

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

CEO

40

Figure 5. Active−Region Safe Operating Area

5000

t

s

1000

500

t, TIME (ns)

200

100

50

0.2 5.01.0 2.0 20

t

f

NPN
PNP

VCC = 30 V
I

= 10

C/IB

= I

I

B1

B2

TJ = 25°C

0.5
IC, COLLECTOR CURRENT (AMP)

Figure 6. Turn−Off Time

100 ms

500 ms

1.0 ms

5.0 ms

dc

10

There are two limitations on the power handling ability of
a transistors average junction temperature and second
breakdown. Safe operating area curves indicate I

C

− V

CE

limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.

The data of Figure 5 is based on T

= 150_C; TC is

J(pk)

variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
v 150_C. T

may be calculated from the data in

J(pk)

J(pk)

Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown

1000

700

C

ob

300

200

C, CAPACITANCE (pF)

100

70

50

C

ib

C

ob

NPN
PNP

= 25°C

T

J

1.0 2.0 5.0 2010
V

, REVERSE VOLTAGE (VOLTS)

R

Figure 7. Capacitances

500.5

500

200

100

, DC CURRENT GAIN

FE

h

5.0

NPN
2N6487, 2N6488

500

TJ = 150°C

25°C

-55°C

50

20

10

VCE = 2.0 V

0.50.2 101.0 2.0

IC, COLLECTOR CURRENT (AMP)

5.0 0.50.2 101.0 2.0 205.0

20

200

100

, DC CURRENT GAIN

FE

h

5.0

50

20

10

25°C

-55°C

VCE = 2.0 V

PNP
2N6490, 2N6491

TJ = 150°C

IC, COLLECTOR CURRENT (AMP)

Figure 8. DC Current Gain

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4

2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP)

2.0

1.8

TJ = 25°C

1.6

1.4

1.2

1.0

0.8

IC = 1.0 A

4.0 A 8.0 A

0.6

0.4

0.2

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

V

0

5.0 100 5000

10

20 50

, BASE CURRENT (mA)

I

B

Figure 9. Collector Saturation Region

2.8

2.4

2.0

1.6

TJ = 25°C

2.0

1.8

TJ = 25°C

1.6

1.4

1.2

1.0

IC = 1.0 A

4.0 A 8.0 A

0.8

0.6

0.4

0.2

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

V

0

20001000200 500 5000

5.0 100

10

20 50 20001000200 500

, BASE CURRENT (mA)

I

B

2.8

2.4

TJ = 25°C

2.0

1.6

1.2

V, VOLTAGE (VOLTS)

0.8

0.4

0

V

= IC/IB = 10

BE(sat)

VBE @ VCE = 2.0 V

V

@ IC/IB = 10

CE(sat)

0.2 0.5 2.0 20101.0 5.0

1.2

V, VOLTAGE (VOLTS)

0.8

0.4
V

0

0.2 0.5 2.0 20101.0 5.0

IC, COLLECTOR CURRENT (AMP)

Figure 10. “On” Voltages

ORDERING INFORMATION

Device Device Marking Package Shipping

2N6487

2N6487G TO−220AB

2N6487

2N6488

2N6488G TO−220AB

2N6488

2N6490

2N6490G TO−220AB

2N6490

2N6491

2N6491G TO−220AB

2N6491

TO−220AB

(Pb−Free)

TO−220AB

(Pb−Free)

TO−220AB

(Pb−Free)

TO−220AB

(Pb−Free)

V

@ IC/IB = 10

BE(sat)

VBE @ VCE = 2.0 V

@ IC/IB = 10

CE(sat)

IC, COLLECTOR CURRENT (AMP)

50 Units / Rail

50 Units / Rail

50 Units / Rail

50 Units / Rail

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5

2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP)

PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AG

SEATING

−T−

PLANE

B

4

Q

123

F

T

A

U

H

K

Z

L

V

G

D

N

C

S

R

J

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.036 0.64 0.91
F 0.142 0.161 3.61 4.09

G 0.095 0.105 2.42 2.66

H 0.110 0.161 2.80 4.10
J 0.014 0.025 0.36 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33

Q 0.100 0.120 2.54 3.04

R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
Z --- 0.080 --- 2.04

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

MILLIMETERSINCHES

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2N6487/D

6