Communication Concepts 2N6488 User Manual
2N6487, 2N6488, (NPN)
2N6490, 2N6491 (PNP)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and
switching applications.
Features
• DC Current Gain Specified to 15 Amperes −
h
= 20−150 @ IC = 5.0 Adc
FE
= 5.0 (Min) @ I
• Collector−Emitter Sustaining Voltage −
V
CEO(sus)
= 60 Vdc (Min) − 2N6487, 2N6490
= 80 Vdc (Min) − 2N6488, 2N6491
• High Current Gain − Bandwidth Product
f
= 5.0 MHz (Min) @ IC = 1.0 Adc
T
• TO−220AB Compact Package
• Pb−Free Packages are Available*
MAXIMUM RATINGS (Note 1)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage V
Collector Current − Continuous I
Base Current I
Total Power Dissipation @ TC = 25_C
Derate above 25_C
Total Power Dissipation @ TA = 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
2N6487, 2N6490
2N6488, 2N6491
2N6487, 2N6490
2N6488, 2N6491
= 15 Adc
C
Symbol Value Unit
V
CEO
V
P
P
TJ, T
R
R
CB
EB
C
B
D
D
−65 to +150 °C
stg
q
JC
q
JA
60
80
70
90
5.0 Vdc
15 Adc
5.0 Adc
75
0.6
1.8
0.014
1.67
70
Vdc
Vdc
W
W/°C
W
W/°C
_C/W
_C/W
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15 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−80 VOLTS, 75 WATTS
MARKING
DIAGRAM
4
TO−220AB
CASE 221A
STYLE 1
1
2
3
2N64xx = Specific Device Code
xx = See Table on Page 5
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 5 of this data sheet.
2N64xxG
AYWW
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 14
1 Publication Order Number:
2N6487/D
2N6487, 2N6488, (NPN) 2N6490, 2N6491 (PNP)
T
ATC
80
4.0
3.0
60
T
C
40
, POWER DISSIPATION (WATTS)
D
P
2.0
20
1.0
0
0
20 40 80 100 120 160
0 60 140
T
A
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
ELECTRICAL CHARACTERISTICS (T
= 25_C unless otherwise noted) (Note 2)
C
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(I
= 200 mAdc, IB = 0) 2N6487, 2N6490
C
2N6488, 2N6491
Collector−Emitter Sustaining Voltage (Note)
(I
= 200 mAdc, VBE = 1.5 Vdc) 2N6487, 2N6490
C
2N6488, 2N6491
Collector Cutoff Current
(V
= 30 Vdc, IB = 0) 2N6487, 2N6490
CE
(VCE = 40 Vdc, IB = 0) 2N6488, 2N6491
Collector Cutoff Current
(VCE = 65 Vdc, V
(VCE = 85 Vdc, V
= 60 Vdc, V
(V
CE
= 80 Vdc, V
(V
CE
= 1.5 Vdc) 2N6487, 2N6490
EB(off)
= 1.5 Vdc) 2N6488, 2N6491
EB(off)
= 1.5 Vdc, TC = 150_C) 2N6487, 2N6490
EB(off)
= 1.5 Vdc, TC = 150_C) 2N6488, 2N6491
EB(off)
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain
(I
= 5.0 Adc, VCE = 4.0 Vdc)
C
(IC = 15 Adc, VCE = 4.0 Vdc)
Collector−Emitter Saturation Voltage
(I
= 5.0 Adc, IB = 0.5 Adc)
C
(IC = 15 Adc, IB = 5.0 Adc)
Base−Emitter On Voltage
(I
= 5.0 Adc, VCE = 4.0 Vdc)
C
(IC = 15 Adc, VCE = 4.0 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 4)
(I
= 1.0 Adc, VCE = 4.0 Vdc, f
C
= 1.0 MHz)
test
Small−Signal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
2. Indicates JEDEC Registered Data.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
= |hfe| • f
4. f
T
test
Symbol
V
CEO(sus)
V
CEX
I
CEO
I
CEX
I
EBO
h
FE
V
CE(sat)
V
BE(on)
f
T
h
fe
Min
60
80
70
90
−
−
−
−
−
−
−
20
5.0
−
−
−
−
5.0
25
Max
−
−
−
−
1.0
1.0
500
500
5.0
5.0
1.0
150
−
1.3
3.5
1.3
3.5
−
−
Unit
Vdc
Vdc
mAdc
mAdc
mAdc
−
Vdc
Vdc
MHz
−
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