Communication Concepts 2N5194 User Manual
2N5194, 2N5195
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Preferred Devices
Silicon PNP Power
Transistors
These devices are designed for use in power amplifier and switching
circuits; excellent safe area limits. Complement to NPN 2N5191,
2N5192.
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS (Note 1)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation @ TC = 25°C
Derate above 25°C
ООООООООО
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
P
D
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TJ, T
stg
2N5194
60
60
2N5195
80
80
5.0
4.0
1.0
40
320
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–65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W/°C
°C/W
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4 AMPERE
POWER TRANSISTORS
PNP SILICON
60 − 80 VOLTS
TO−225AA
CASE 77−09
STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
ООООООООО
Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC registered data.
Symbol
q
JC
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Max
3.12
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Unit
°C/W
MARKING DIAGRAM
YWW
2
N519xG
Y = Year
WW = Work Week
2N519x = Device Code
x = 4 or 5
G = Pb−Free Package
ORDERING INFORMATION
Device Package
2N5194 TO−225 500 Units / Bulk
2N5194G TO−225
(Pb−Free)
2N5195 TO−225 500 Units / Bulk
2N5195G TO−225
(Pb−Free)
Shipping
500 Units / Bulk
500 Units / Bulk
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1 Publication Order Number:
October, 2006 − Rev. 12
Preferred devices are recommended choices for future use
and best overall value.
2N5194/D
2N5194, 2N5195
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ELECTRICAL CHARACTERISTICS (T
= 25_C unless otherwise noted) (Note 2)
C
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
= 0.1 Adc, IB = 0) 2N5194
(I
ОООООООООООООООООООО
C
Collector Cutoff Current
ОООООООООООООООООООО
(VCE = 60 Vdc, IB = 0) 2N5194
(VCE = 80 Vdc, IB = 0) 2N5195
ОООООООООООООООООООО
2N5195
Collector Cutoff Current
(VCE = 60 Vdc, V
ОООООООООООООООООООО
(VCE = 80 Vdc, V
(VCE = 60 Vdc, V
ОООООООООООООООООООО
(VCE = 80 Vdc, V
= 1.5 Vdc) 2N5194
BE(off)
= 1.5 Vdc) 2N5195
BE(off)
= 1.5 Vdc, TC = 125_C) 2N5194
BE(off)
= 1.5 Vdc, TC = 125_C) 2N5195
BE(off)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0) 2N5194
ОООООООООООООООООООО
(VCB = 80 Vdc, IE = 0) 2N5195
Emitter Cutoff Current
ОООООООООООООООООООО
(VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 1.5 Adc, VCE = 2.0 Vdc) 2N5194
ОООООООООООООООООООО
(IC = 4.0 Adc, VCE = 2.0 Vdc) 2N5194
ОООООООООООООООООООО
Collector−Emitter Saturation Voltage (Note 3)
ОООООООООООООООООООО
(IC = 1.5 Adc, IB = 0.15 Adc)
(IC = 4.0 Adc, IB = 1.0 Adc)
ОООООООООООООООООООО
2N5195
2N5195
Base−Emitter On Voltage (Note 3)
(IC = 1.5 Adc, VCE = 2.0 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
ОООООООООООООООООООО
2. Indicates JEDEC registered data.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Symbol
V
CEO(sus)
ÎÎÎ
I
CEO
ÎÎÎ
ÎÎÎ
I
CEX
ÎÎÎ
ÎÎÎ
I
CBO
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I
EBO
ÎÎÎ
h
FE
ÎÎÎ
ÎÎÎ
V
CE(sat)
ÎÎÎ
ÎÎÎ
V
BE(on)
f
T
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Min
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60
80
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−
−
Î
−
Î
−
−
Î
−
−
Î
−
−
Î
25
Î
20
10
Î
7.0
Î
−
−
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−
2.0
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Max
ÎÎ
−
−
ÎÎ
1.0
1.0
ÎÎ
0.1
ÎÎ
0.1
2.0
ÎÎ
2.0
0.1
ÎÎ
0.1
1.0
ÎÎ
100
ÎÎ
80
−
ÎÎ
−
ÎÎ
0.6
1.4
ÎÎ
1.2
−
ÎÎ
Unit
Vdc
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mAdc
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mAdc
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mAdc
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mAdc
Î
−
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Vdc
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Vdc
MHz
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10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
, DC CURRENT GAIN (NORMALIZED)
0.2
FE
h
0.1
0.004
TJ = 150°C
VCE = 2.0 V
VCE = 10 V
25°C
−55 °C
0.007 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 4.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
Figure 1. DC Current Gain
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