Communication Concepts 2N5192 User Manual
Features
■ NPN transistors
Applications
■ Linear and switching industrial equipment
2N5191
2N5192
NPN power transistors
Description
The devices are manufactured in Planar
technology with “Base Island” layout. The
resulting transistor shows exceptional high gain
performance coupled with very low saturation
voltage. The PNP type of 2N5192 is 2N5195.
1
2
3
SOT-32
Figure 1. Internal schematic diagram
Table 1. Devices summary
Order code Marking Package Packaging
2N5191 2N5191 SOT-32 Tube
2N5192 2N5192 SOT-32 Tube
June 2007 Rev 3 1/9
www.st.com
9
Electrical ratings 2N5191 2N5192
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter
V
V
V
P
Collector-base voltage (IE = 0) 60 80 V
CBO
Collector-base voltage (IB = 0) 60 80 V
CEO
Emitter-base voltage (IC = 0) 5 V
EBO
I
Collector current 4 A
C
Collector peak current 7 A
I
CM
I
Base current 1 A
B
Total dissipation at T
TOT
T
Storage temperature -65 to 150 °C
stg
T
Max. operating junction temperature 150 °C
J
= 25°C 40 W
case
Value
2N5191 2N5192
Unit
2/9
2N5191 2N5192 Electrical characteristics
2 Electrical characteristics
(T
= 25°C unless otherwise specified)
case
Table 3. Electrical characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
CEX
I
CEO
I
EBO
V
CEO(sus)
V
CE(sat)
V
BE
h
FE
Collector cut-off current
= 0)
(I
E
Collector cut-off current
(V
= -1.5V)
BE
Collector cut-off current
= 0)
(I
B
Emitter cut-off current
= 0)
(I
C
Collector-emitter
(1)
sustaining voltage
(I
= 0)
B
(1)
Collector-emitter
saturation voltage
(1)
Base-emitter voltage
DC current gain
V
= rated V
CB
V
CE
V
CE
V
CE
V
EB
=100mA
I
C
= rated V
= rated V
= rated V
= 5V
CBO
CEO
CEO Tc
CEO
for 2N5191
for 2N5192
I
= 1.5A _ IB = 0.15A
C
= 4A _ IB = 1A
I
C
I
= 1.5A _ _ V
C
= 1.5A _ _ V
I
C
CE
CE
for 2N5191
for 2N5192
=4A V
I
C
CE
for 2N5191
for 2N5192
= 2V
=2V
=2V
=125°C
60
80
25
20
10
0.1 mA
0.12mA
mA
1mA
1mA
V
V
0.6
1.4VV
1.2 V
100
80
7
Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5%
3/9
Loading...