Features
■ NPN transistors
Applications
■ Linear and switching industrial equipment
2N5191
2N5192
NPN power transistors
Description
The devices are manufactured in Planar
technology with “Base Island” layout. The
resulting transistor shows exceptional high gain
performance coupled with very low saturation
voltage. The PNP type of 2N5192 is 2N5195.
1
2
3
SOT-32
Figure 1. Internal schematic diagram
Table 1. Devices summary
Order code Marking Package Packaging
2N5191 2N5191 SOT-32 Tube
2N5192 2N5192 SOT-32 Tube
June 2007 Rev 3 1/9
www.st.com
9
Electrical ratings 2N5191 2N5192
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter
V
V
V
P
Collector-base voltage (IE = 0) 60 80 V
CBO
Collector-base voltage (IB = 0) 60 80 V
CEO
Emitter-base voltage (IC = 0) 5 V
EBO
I
Collector current 4 A
C
Collector peak current 7 A
I
CM
I
Base current 1 A
B
Total dissipation at T
TOT
T
Storage temperature -65 to 150 °C
stg
T
Max. operating junction temperature 150 °C
J
= 25°C 40 W
case
Value
2N5191 2N5192
Unit
2/9
2N5191 2N5192 Electrical characteristics
2 Electrical characteristics
(T
= 25°C unless otherwise specified)
case
Table 3. Electrical characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
CEX
I
CEO
I
EBO
V
CEO(sus)
V
CE(sat)
V
BE
h
FE
Collector cut-off current
= 0)
(I
E
Collector cut-off current
(V
= -1.5V)
BE
Collector cut-off current
= 0)
(I
B
Emitter cut-off current
= 0)
(I
C
Collector-emitter
(1)
sustaining voltage
(I
= 0)
B
(1)
Collector-emitter
saturation voltage
(1)
Base-emitter voltage
DC current gain
V
= rated V
CB
V
CE
V
CE
V
CE
V
EB
=100mA
I
C
= rated V
= rated V
= rated V
= 5V
CBO
CEO
CEO Tc
CEO
for 2N5191
for 2N5192
I
= 1.5A _ IB = 0.15A
C
= 4A _ IB = 1A
I
C
I
= 1.5A _ _ V
C
= 1.5A _ _ V
I
C
CE
CE
for 2N5191
for 2N5192
=4A V
I
C
CE
for 2N5191
for 2N5192
= 2V
=2V
=2V
=125°C
60
80
25
20
10
0.1 mA
0.12mA
mA
1mA
1mA
V
V
0.6
1.4VV
1.2 V
100
80
7
Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5%
3/9
Electrical characteristics 2N5191 2N5192
2.1 Electrical characteristic (curves)
Figure 2. DC current gain Figure 3. DC current gain
Figure 4. Collector-emitter saturation
voltage
Figure 6. Base-emitter on voltage
Figure 5. Base-emitter saturation
voltage
Figure 7. Resistive load switching time
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2N5191 2N5192 Electrical characteristics
Figure 8. Resistive load switching time
2.2 Test circuit
Figure 9. Resistive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
5/9
Package mechanical data 2N5191 2N5192
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
6/9
2N5191 2N5192 Package mechanical data
SOT-32 (TO-126) MECHANICAL DATA
DIM.
A2.4 2.9
B 0.64 0.88
B1 0.39 0.63
D 10.5 11.05
E7.4 7.8
e 2.04 2.29 2 .54
e1 4.07 4.58 5 .08
L15.3 16
P2.9 3.2
Q3.8
Q1 1 1.52
H2 2.15
I1.27
MIN. TYP MAX.
mm.
0016114E
7/9
Revision history 2N5191 2N5192
4 Revision history
Table 4. Revision history
Date Revision Changes
01-Dec-2000 1 Initial release.
14-Jan-2004 2 Technical migration from ST-Press to EDOCS
28-Jun-2007 3 Figures 2,3,4,5,6,7, 8 and figure 9 have been added.
8/9
2N5191 2N5192
y
y
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