2N4401
Low Power Bipolar Transistors
Page <1> 12/05/08 V1.1
Features:
• NPN Silicon Planar Epitaxial Transistors.
• General Purpose Switching Applications.
TO-92 Plastic Package
Dimensions Minimum Maximum
A 4.32 5.33
B 4.45 5.20
C 3.18 4.19
D 0.41 0.55
E 0.35 0.50
F 5°
G
1.14
1.40
H 1.53
K 12.70 -
L 1.982 2.082
Dimensions : Millimetres
Pin Configuration:
1. Emitter
2. Base
3. Collector
2N4401
Low Power Bipolar Transistors
Page <2> 12/05/08 V1.1
Absolute Maximum Ratings
Rating Symbol 2N4401 Unit
Collector-Emitter Voltage
V
CEO
40
VCollector-Base Voltage
V
CBO
60
Emitter-Base Voltage
V
EBO
6
Collector Current Continuous
I
C
600 mA
Power Dissipation at Ta= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Power Dissipation at Tc= 25°C
Derate above 25°C
1.5
12
W
W/°C
Operating and Storage JunctionTemperature Range
Tj, T
stg
-55 to +150 °C
Thermal Resistance
Junction to Case
R
th (j-c)
83.3
°C/W
Junction to Ambient
R
th (j-a)
200
Electrical Characteristics (Ta= 25°C unless otherwise specified)
Characteristic Symbol 2N4401 Unit
Collector Emitter Voltage
IC= 1mA, IB= 0
BV
CEO
*
>40
V
Collector Base Voltage
I
C
= 100µA, IE= 0
BV
CBO
>60
Emitter Base Voltage
IE= 100µA, IC= 0
BV
EBO
>6
Base Cut off Current
V
CE
= 35V, VEB= 0.4V
I
BEV
<0.1
µA
Collector Cut off Current
VCE= 35V, VEB= 0.4V
I
CEX
Collector Emitter Saturation Voltage
IC= 150mA, IB= 15mA
I
C
= 500mA, IB= 50mA
V
CE (Sat)
*
<0.4
<0.75
V
Base Emitter Saturation Voltage
I
C
= 150mA, IB= 15mA
I
C
= 500mA, IB= 50mA
V
BE (Sat)
*
0.75 - 0.95
<1.2
*Pulse Test : Pulse Width: ≤300µs, Duty ≤2.0%
2N4401
Low Power Bipolar Transistors
Page <3> 12/05/08 V1.1
Electrical Characteristics (Ta= 25°C unless otherwise specified)
Characteristic Symbol 2N4401 Unit
DC Current Gain
I
C
= 0.1mA, VCE= 1V
I
C
= 1mA, VCE= 1V
I
C
= 10mA, VCE= 1V
IC= 150mA, VCE= 1V*
I
C
= 500mA, VCE= 2V*
h
FE
>20
>40
>80
100 - 300
>40
-
Dynamic Characteristics
Small Signal Current Gain
IC= 1mA, VCE= 10V, f = 1KHz
h
fe
40 - 500 -
Input Impedance
I
C
= 1mA, VCE= 10V, f = 1KHz
h
ie
1.0 - 15
kΩ
Voltage Feedback Ratio
IC= 1mA, VCE= 10V, f = 1KHz
h
re
0.1 - 8.0
x10
-4
Output Impedance
IC= 1mA, VCE= 10V, f = 1KHz
h
oe
1.0 - 30
µΩ
Collector-Base Capacitance
VCB= 5V, IE= 0, f = 100KHz
V
CB
= 10V, IE= 0, f = 140KHz
C
cb
<6.5
pF
Emitter-Base Capacitance
VEB= 0.5V, IC= 0, f = 100kHz
C
eb
<30
Transition Frequency
IC= 20mA, VCE= 10V, f = 100MHz
f
T
>250 MHz
Switching Characteristics
VCC= 30V, VEB= 2V
I
C
= 150mA, IB1= 15mA
Delay Time
t
d
<15
ns
Rise Time
t
r
<20
VCC= 30V, IC= 150mA
I
B1
= IB2= 15mA
Storage time
t
s
<225
ns
Fall Time
t
f
<30
*Pulse Test : Pulse Width: ≤300µs, Duty ≤2.0%
2N4401
Low Power Bipolar Transistors
Page <4> 12/05/08 V1.1
DC Current Gain
h
FE
, DC Current Gain (Normalized)
ICCollector Current (mA)
DC Current Gain
V
CE
, Collector-Emitter Voltage (V)
IBBase Current (mA)
On Voltages
Voltage (V)
ICCollector Current (mA)
2N4401
Low Power Bipolar Transistors
Page <5> 12/05/08 V1.1
DC Current Gain
h
FE
, DC Current Gain (Normalized)
ICCollector Current (mA)
Collector Saturation Region
V
CE
, Collector-Emitter Voltage (V)
IBBase Current (mA)
2N4401
Low Power Bipolar Transistors
Page <6> 12/05/08 V1.1
ICCollector Current (mA)
Voltage (V)
On Voltages
Part Number Table
Package Part Number
TO-92 2N4401
For enquiries from all other markets
2N4401
Low Power Bipolar Transistors
Page <7> 12/05/08 V1.1
Notes:
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export
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