Communication Concepts 2M 1KW User Manual

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs

These high ruggedness devices are designed for use in high VSWR industrial
(including laser and plasma exciters), broadcast (analog and digital), aerospace
and radio/land mobile applications. They are unmatched input and output
designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

! Typical Performance: V

Signal Type

Pulsed (100 #sec,

20% Duty Cycle)

CW 1250 CW 230 22.9 74.6 -- 1 5

! Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc,

230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness,
1250 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec

! Capable of 1250 Watts CW Operation

Features

! Unmatched Input and Output Allowing Wide Frequency Range Utilization
! Device can be used Single--Ended or in a Push--Pull Configuration
! Qualified Up to a Maximum of 50 VDDOperation

! Characterized from 30 V to 50 V for Extended Power Range
! Suitable for Linear Application with Appropriate Biasing
! Integrated ESD Protection with Greater Negative Gate--Source Voltage

Range for Improved Class C Operation

! Characterized with Series Equivalent Large--Signal Impedance Parameters
! RoHS Compliant

! In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.

For R5 Tape and Reel options, see p. 12.

=50Volts,IDQ= 100 mA

DD

P

out

(W)

1250 Peak 230 24.0 74.0 -- 1 4

f

(MHz)

G

ps

(dB)

"

(%)

D

IRL

(dB)

Document Number: MRFE6VP61K25H

Rev . 1, 1/201 1

MRFE6VP61K25HR6

MRFE6VP61K25HSR6

1.8--600 MHz, 1250 W CW, 50 V
LATERAL N--CHANNEL

BROADBAND

RF POWER MOSFETs

CASE 375D--05, STYLE 1

NI--1230

MRFE6VP61K25HR6

CASE 375E--04, STYLE 1

NI--1230S

MRFE6VP61K25HSR6

PARTS ARE PUSH-- PULL

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain--Source Voltage V

Gate--Source Voltage V

Storage Temperature Range T

Case Operating Temperature T

Total Device Dissipation @ TC=25$C

Derate above 25$C

Operating Junction Temperature

(1,2)

DSS

GS

stg

P

T

--0.5, +125 Vdc

--6.0, +10 Vdc

-- 65 to +150 $C

C

D

J

150 $C

1333

6.67

225 $C

W/$C

W

RFin/V

RFin/V

31

GS

42

GS

Figure 1. Pin Connections

Table 2. Thermal Characteristics

Characteristic Symbol Value

Thermal Resistance, Junction to Case

Case Temperature 66$C, 1250 W Pulsed, 100 #sec Pulse Width, 20% Duty Cycle, 100 mA, 230 MHz
Case Temperature 63$C, 1250 W CW, 100 mA, 230 MHz

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf
calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf
Select Documentation/Application Notes -- AN1955.

& Freescale Semiconductor, Inc., 2010--2011.All rights reserved.

. Select Software & Tools/Development Tools/Calculators to access MTTF

MRFE6VP61K25HR6 MRFE6VP61K25HSR6

RF Device Data
Freescale Semiconductor

(Top View)

Z

%

JC

R

%

JC

.

0.03

0.15

RF

RF

(2,3)

out/VDS

out/VDS

Unit

$C/W

1

Table 3. ESD Protection Characteristics

Test Methodology Class

Human Body Model (per JESD22--A114) 2 (Minimum)

Machine Model (per EIA/JESD22-- A115) B (Minimum)

Charge Device Model (per JESD22 --C101) IV (Minimum)

Table 4. Electrical Characteristics (T

Characteristic

Off Characteristics

Gate--Source Leakage Current

(V

=5Vdc,VDS=0Vdc)

GS

Drain--Source Breakdown Voltage

(V

=0Vdc,ID= 100 mA)

GS

Zero Gate Voltage Drain Leakage Current

(V

=50Vdc,VGS=0Vdc)

DS

Zero Gate Voltage Drain Leakage Current

(V

= 100 Vdc, VGS=0Vdc)

DS

On Characteristics

Gate Threshold Voltage

(VDS=10Vdc,ID= 1776 #Adc)

Gate Quiescent Voltage

(V

=50Vdc,ID= 100 mAdc, Measured in Functional Test)

DD

Drain--Source On--Voltage

(VGS=10Vdc,ID=2Adc)

Dynamic Characteristics

Reverse Transfer Capacitance

(V

=50Vdc' 30 mV(rms)ac @ 1 MHz, VGS=0Vdc)

DS

Output Capacitance

(V

=50Vdc' 30 mV(rms)ac @ 1 MHz, VGS=0Vdc)

DS

Input Capacitance

(V

=50Vdc,VGS=0Vdc' 30 mV(rms)ac @ 1 MHz)

DS

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD=50Vdc,IDQ= 100 mA, P
Pulsed, 100 #sec Pulse Width, 20% Duty Cycle

Power Gain

Drain Efficiency "

Input Return Loss IRL — -- 1 4 -- 1 0 dB

Pulsed RF Performance (In Freescale Application Test Fixture, 50 ohm system) VDD=50Vdc,IDQ= 100 mA, P
(250 W Avg.), f = 230 MHz, Pulsed, 100 #sec Pulse Width, 20% Duty Cycle

Load Mismatch

(VSWR 65:1 at all Phase Angles)

1. Each side of device measured separately.

(1)

(1)

(1)

(1)

=25$C unless otherwise noted)

A

Symbol Min Typ Max Unit

I

GSS

V

(BR)DSS

I

DSS

I

DSS

V

GS(th)

V

GS(Q)

V

DS(on)

C

rss

C

oss

C

iss

G

ps

D

— — 1 #Adc

125 — — Vdc

— — 10 #Adc

— — 20 #Adc

1.7 2.2 2.7 Vdc

1.4 2.2 2.9 Vdc

— 0.15 — Vdc

— 2.8 — pF

— 185 — pF

— 562 — pF

= 1250 W Peak (250 W Avg.), f = 230 MHz,

out

23.0 24.0 26.0 dB

72.5 74.0 — %

= 1250 W Peak

out

( No Degradation in Output Power

MRFE6VP61K25HR6 MRFE6VP61K25HSR6

2

RF Device Data

Freescale Semiconductor

V

BIAS

+

C10

C12C11 C13

RF

INPUT

COAX1

R1

Z11

Z3

Z5Z6Z7

Z1

Z2

C2

C4

C1

Z4

Z9

Z13

L1

C5

Z8

Z10

Z14

L2

C3

Z12

COAX2

V

BIAS

C6

+

C8C7 C9

R2

V

+

+

L3

C21

C22

C23

+

C24

SUPPLY

Z19

COAX3

Z15

Z17

Z21

Z23 Z25

C16

Z27

Z1 0.192) x 0.082) Microstrip
Z2 0.175) x 0.082) Microstrip
Z3, Z4 0.170) x 0.100) Microstrip
Z5, Z6 0.116) x 0.285) Microstrip
Z7, Z8 0.116) x 0.285) Microstrip
Z9, Z10 0.108) x 0.285) Microstrip

Figure 2. MRFE6VP61K25HR6(HSR6) Test Circuit Schematic — Pulsed

DUT

Z16

C14

Z22

C15

Z24

Z18

Z20

L4

+

C26

C25

Z11*, Z12* 0.872) x 0.058) Microstrip
Z13, Z14 0.412) x 0.726) Microstrip
Z15, Z16 0.371) x 0.507) Microstrip
Z17*, Z18* 0.466) x 0.363) Microstrip
Z19*, Z20* 1.187) x 0.154) Microstrip
Z21, Z22 0.104) x 0.507) Microstrip

C17

Z29

Z28Z26

C18

V

SUPPLY

COAX4

C19

+

C27

+

C28

Z23, Z24 1.251) x 0.300) Microstrip
Z25, Z26 0.127) x 0.300) Microstrip
Z27, Z28 0.116) x 0.300) Microstrip
Z29 0.186) x 0.082) Microstrip
Z30 0.179) x 0.082) Microstrip

* Line length includes microstrip bends

C20

Z30

RF

OUTPUT

RF Device Data
Freescale Semiconductor

MRFE6VP61K25HR6 MRFE6VP61K25HSR6

3

----

C1

C10 C11

COAX1

COAX2

C6

C7

C12

C8

C2

C3

R1

R2

C4

C13

C9

C22 C23 C24

C21

COAX3

L3

C16

L1

C5

L2

CUT OUT AREA

C14

MRFE6VP61K25H
Rev. 3

C15

L4

C25

C26 C27 C28

C17

C18

C19

COAX4

-- --

C20

Figure 3. MRFE6VP61K25HR6(HSR6) Test Circuit Component Layout — Pulsed

Table 5. MRFE6VP61K25HR6(HSR6) Test Circuit Component Designations and Values — Pulsed

Part Description Part Number Manufacturer

C1 20 pF Chip Capacitor ATC100B200JT500XT ATC

C2, C3, C5 27 pF Chip Capacitors ATC100B270JT500XT ATC

C4 0.8--8.0 pF Variable Capacitor, Gigatrim 27291SL Johanson

C6, C10 22 #F, 35 V Tantalum Capacitors T491X226K035AT Kemet

C7, C11 0.1 #F Chip Capacitors CDR33BX104AKYS AVX

C8, C12 220 nF Chip Capacitors C1812C224K5RACTU Kemet

C9, C13, C21, C25 1000 pF Chip Capacitors ATC100B102JT50XT ATC

C14 43 pF Chip Capacitor ATC100B430JT500XT ATC

C15 75 pF Metal Mica MIN02--002EC750J--F CDE

C16, C17, C18, C19 240 pF Chip Capacitors ATC100B241JT200XT ATC

C20 6.2 pF Chip Capacitor ATC100B6R2BT500XT ATC

C22, C23, C24, C26, C27, C28 470 #F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp

Coax1, 2, 3, 4 25 * Semi Rigid Coax, 2.2) Long UT--141C--25 Micro--Coax

L1, L2 5 nH Inductors A02TKLC Coilcraft

L3, L4 6.6 nH Inductors GA3093--ALC Coilcraft

R1, R2 10 * Chip Resistors CRCW120610R0JNEA Vishay

PCB 0.030), +r=2.55 AD255A Arlon

MRFE6VP61K25HR6 MRFE6VP61K25HSR6

4

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

2000

C, CAPACITANCE (pF)

1000

100

10

C

C

oss

Measured with '30 mV(rms)ac @ 1 MHz

=0Vdc

V

GS

1

02010

V

, DRAIN--SOURCE VOLTAGE (VOLTS)

DS

30

40

Note: Each side of device measured separately.

Figure 4. Capacitance versus Drain--Source Voltage

26

VDD=50Vdc,IDQ= 100 mA, f = 230 MHz
Pulse Width = 100 #sec, 20% Duty Cycle

25

24

23

G

ps

, POWER GAIN (dB)

22

ps

G

21

"

D

20

100

P

, OUTPUT POWER (WATTS) PULSED

out

1000

Figure 6. Pulsed Power Gain and Drain Efficiency

versus Output Power

66

iss

65

64

63

P1dB = 61.3 dBm

P2dB = 61.7 dBm (1472 W)

P3dB = 61.9 dBm (1553 W)

Ideal

(1333 W)

62

Actual

61

C

rss

, OUTPUT POWER (dBm) PULSED

out

P

60

VDD=50Vdc,IDQ= 100 mA, f = 230 MHz
Pulse Width = 100 #sec, 20% Duty Cycle

59

50

35

36 37 38 39 40 41 42

P

, INPUT POWER (dBm) PULSED

in

Figure 5. Pulsed Output Power versus

Input Power

90

80

70

60

50

40

30

2000

26

VDD=50Vdc,IDQ= 100 mA, f = 230 MHz

25

Pulse Width = 100 #sec, 20% Duty Cycle

24

23

22

21

20

, POWER GAIN (dB)

DRAIN EFFICIENCY (%)

19

ps

G

D,

"

18

17

VDD=30V

35 V

40 V

50 V

45 V

16

0

200

P

600

400 800 1000 1200

, OUTPUT POWER (WATTS) PULSED

out

1400 1600

Figure 7. Pulsed Power Gain versus

Output Power

90

80

VDD=30V

70

60

50

DRAIN EFFICIENCY (%)

40

D,

"

30

VDD=50Vdc,IDQ= 100 mA, f = 230 MHz
Pulse Width = 100 #sec, 20% Duty Cycle

20

0

200 400 600 800 1000 1200 1400

P

, OUTPUT POWER (WATTS) PULSED

out

Figure 8. Pulsed Drain Efficiency versus

RF Device Data
Freescale Semiconductor

35 V

Output Power

40 V

45 V

50 V

1600

26

VDD=50Vdc,IDQ= 100 mA, f = 230 MHz
Pulse Width = 100 #sec, 20% Duty Cycle

25

25_C

24

TC=--30_C

23

25_C

22

G

ps

, POWER GAIN (dB)

ps

21

G

85_C

20

"

D

19

100 2000

P

, OUTPUT POWER (WATTS) PULSED

out

Figure 9. Pulsed Power Gain and Drain Efficiency

versus Output Power

MRFE6VP61K25HR6 MRFE6VP61K25HSR6

-- 3 0 _C

85_C

90

80

70

60

50

40

, DRAIN EFFICIENCY (%)

D

"

30

20

20001000

5

TYPICAL CHARACTERISTICS

9

10

8

10

7

10

6

10

MTTF (HOURS)

5

10

4

10

90

110 130 150 170 190

T

, JUNCTION TEMPERATURE ($C)

J

This above graph displays calculated MTTF in hours when the device
is operated at V

=50Vdc,P

DD

= 1250 W CW, and "D= 74.6%.

out

MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.

Figure 10. MTTF versus Junction Temperature — CW

210 230

250

MRFE6VP61K25HR6 MRFE6VP61K25HSR6

6

RF Device Data

Freescale Semiconductor

Zo=5*

Z

Z

load

source

f = 230 MHz

f = 230 MHz

=50Vdc,IDQ= 100 mA, P

V

DD

f

MHz

Z

source

*

= 1250 W Peak

out

Z

load

*

230 1.29 + j3.54 2.12 + j2.68

Z

Z

Input
Matching
Network

= Test circuit impedance as measured from

source

load

gate to gate, balanced configuration.

= Test circuit impedance as measured from

drain to drain, balanced configuration.

Device
Under

+

Tes t

Output

--

Matching
Network

-- +

Z

source

Z

load

Figure 11. Series Equivalent Source and Load Impedance

RF Device Data
Freescale Semiconductor

MRFE6VP61K25HR6 MRFE6VP61K25HSR6

7

PACKAGE DIMENSIONS

MRFE6VP61K25HR6 MRFE6VP61K25HSR6

8

RF Device Data

Freescale Semiconductor

RF Device Data
Freescale Semiconductor

MRFE6VP61K25HR6 MRFE6VP61K25HSR6

9

MRFE6VP61K25HR6 MRFE6VP61K25HSR6

10

RF Device Data

Freescale Semiconductor

RF Device Data
Freescale Semiconductor

MRFE6VP61K25HR6 MRFE6VP61K25HSR6

11

PRODUCT DOCUMENT ATION AND SOFTWARE

Refer to the following documents and software to aid your design process.

Application Notes

! AN1955: Thermal Measurement Methodology of RF Power Amplifiers

Engineering Bulletins

! EB212: Using Data Sheet Impedances for RF LDMOS Devices

Software

! Electromigration MTTF Calculator

! RF High Power Model

! .s2p File

For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.

R5 TA PE AND REEL OPTION

R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.

The R5 tape and reel option for MRFE6VP61K25H and MRFE6VP61K25HS parts will be available for 2 years after release of
MRFE6VP61K25H and MRFE6VP61K25HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be
delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5
tape and reel option will be offered MRFE6VP61K25H and MRFE6VP61K25HS in the R6 tape and reel option.

REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

0 Nov. 2010 ! Initial Release of Data Sheet

1 Jan. 2011 ! Fig. 1, Pin Connections, corrected pin 4 label from RF

out/VGS

to RFin/VGS,p.1

MRFE6VP61K25HR6 MRFE6VP61K25HSR6

12

RF Device Data

Freescale Semiconductor

How to Reach Us:

Home Page:

www.freescale.com

Web Support:

http://www.freescale.com/support

USA/Europe or Locations Not Listed:

Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284
1--800--521--6274 or [phone]
www.freescale.com/support

Europe, Middle East, and Africa:

Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
[phone] (English)
[phone] (English)
[phone] (German)
[phone](French)
www.freescale.com/support

Japan:

Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1--8--1, Shimo--Meguro, Meguro--ku,
Tokyo 153--0064
Japan
0120 191014 or [phone]
[e-mail]

Asia/Pacific:

Freescale Semiconductor China Ltd.
Exchange Building 23F
No. 118 Jianguo Road
Chaoyang District
Beijing 100022
China
[phone]
[e-mail]

For Literature Requests Only:

Freescale Semiconductor Literature Distribution Center
1--800--441--2447 or [phone]
Fax: [phone]
[e-mail]

Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.

Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.

Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
, Freescale Semiconductor, Inc. 2010--2011. All rights reserved.

Document Number: MRFE6VP61K25H

RF Device Data

Rev. 1, 1/2011

Freescale Semiconductor

MRFE6VP61K25HR6 MRFE6VP61K25HSR6

13