Communication Concepts 2M 1KW User Manual

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs

These high ruggedness devices are designed for use in high VSWR industrial
(including laser and plasma exciters), broadcast (analog and digital), aerospace
and radio/land mobile applications. They are unmatched input and output
designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

! Typical Performance: V

Signal Type

Pulsed (100 #sec,

20% Duty Cycle)

CW 1250 CW 230 22.9 74.6 -- 1 5

! Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc,

230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness,
1250 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec

! Capable of 1250 Watts CW Operation

Features

! Unmatched Input and Output Allowing Wide Frequency Range Utilization
! Device can be used Single--Ended or in a Push--Pull Configuration
! Qualified Up to a Maximum of 50 VDDOperation

! Characterized from 30 V to 50 V for Extended Power Range
! Suitable for Linear Application with Appropriate Biasing
! Integrated ESD Protection with Greater Negative Gate--Source Voltage

Range for Improved Class C Operation

! Characterized with Series Equivalent Large--Signal Impedance Parameters
! RoHS Compliant

! In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.

For R5 Tape and Reel options, see p. 12.

=50Volts,IDQ= 100 mA

DD

P

out

(W)

1250 Peak 230 24.0 74.0 -- 1 4

f

(MHz)

G

ps

(dB)

"

(%)

D

IRL

(dB)

Document Number: MRFE6VP61K25H

Rev . 1, 1/201 1

MRFE6VP61K25HR6

MRFE6VP61K25HSR6

1.8--600 MHz, 1250 W CW, 50 V
LATERAL N--CHANNEL

BROADBAND

RF POWER MOSFETs

CASE 375D--05, STYLE 1

NI--1230

MRFE6VP61K25HR6

CASE 375E--04, STYLE 1

NI--1230S

MRFE6VP61K25HSR6

PARTS ARE PUSH-- PULL

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain--Source Voltage V

Gate--Source Voltage V

Storage Temperature Range T

Case Operating Temperature T

Total Device Dissipation @ TC=25$C

Derate above 25$C

Operating Junction Temperature

(1,2)

DSS

GS

stg

P

T

--0.5, +125 Vdc

--6.0, +10 Vdc

-- 65 to +150 $C

C

D

J

150 $C

1333

6.67

225 $C

W/$C

W

RFin/V

RFin/V

31

GS

42

GS

Figure 1. Pin Connections

Table 2. Thermal Characteristics

Characteristic Symbol Value

Thermal Resistance, Junction to Case

Case Temperature 66$C, 1250 W Pulsed, 100 #sec Pulse Width, 20% Duty Cycle, 100 mA, 230 MHz
Case Temperature 63$C, 1250 W CW, 100 mA, 230 MHz

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf
calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf
Select Documentation/Application Notes -- AN1955.

& Freescale Semiconductor, Inc., 2010--2011.All rights reserved.

. Select Software & Tools/Development Tools/Calculators to access MTTF

MRFE6VP61K25HR6 MRFE6VP61K25HSR6

RF Device Data
Freescale Semiconductor

(Top View)

Z

%

JC

R

%

JC

.

0.03

0.15

RF

RF

(2,3)

out/VDS

out/VDS

Unit

$C/W

1

Table 3. ESD Protection Characteristics

Test Methodology Class

Human Body Model (per JESD22--A114) 2 (Minimum)

Machine Model (per EIA/JESD22-- A115) B (Minimum)

Charge Device Model (per JESD22 --C101) IV (Minimum)

Table 4. Electrical Characteristics (T

Characteristic

Off Characteristics

Gate--Source Leakage Current

(V

=5Vdc,VDS=0Vdc)

GS

Drain--Source Breakdown Voltage

(V

=0Vdc,ID= 100 mA)

GS

Zero Gate Voltage Drain Leakage Current

(V

=50Vdc,VGS=0Vdc)

DS

Zero Gate Voltage Drain Leakage Current

(V

= 100 Vdc, VGS=0Vdc)

DS

On Characteristics

Gate Threshold Voltage

(VDS=10Vdc,ID= 1776 #Adc)

Gate Quiescent Voltage

(V

=50Vdc,ID= 100 mAdc, Measured in Functional Test)

DD

Drain--Source On--Voltage

(VGS=10Vdc,ID=2Adc)

Dynamic Characteristics

Reverse Transfer Capacitance

(V

=50Vdc' 30 mV(rms)ac @ 1 MHz, VGS=0Vdc)

DS

Output Capacitance

(V

=50Vdc' 30 mV(rms)ac @ 1 MHz, VGS=0Vdc)

DS

Input Capacitance

(V

=50Vdc,VGS=0Vdc' 30 mV(rms)ac @ 1 MHz)

DS

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD=50Vdc,IDQ= 100 mA, P
Pulsed, 100 #sec Pulse Width, 20% Duty Cycle

Power Gain

Drain Efficiency "

Input Return Loss IRL — -- 1 4 -- 1 0 dB

Pulsed RF Performance (In Freescale Application Test Fixture, 50 ohm system) VDD=50Vdc,IDQ= 100 mA, P
(250 W Avg.), f = 230 MHz, Pulsed, 100 #sec Pulse Width, 20% Duty Cycle

Load Mismatch

(VSWR 65:1 at all Phase Angles)

1. Each side of device measured separately.

(1)

(1)

(1)

(1)

=25$C unless otherwise noted)

A

Symbol Min Typ Max Unit

I

GSS

V

(BR)DSS

I

DSS

I

DSS

V

GS(th)

V

GS(Q)

V

DS(on)

C

rss

C

oss

C

iss

G

ps

D

— — 1 #Adc

125 — — Vdc

— — 10 #Adc

— — 20 #Adc

1.7 2.2 2.7 Vdc

1.4 2.2 2.9 Vdc

— 0.15 — Vdc

— 2.8 — pF

— 185 — pF

— 562 — pF

= 1250 W Peak (250 W Avg.), f = 230 MHz,

out

23.0 24.0 26.0 dB

72.5 74.0 — %

= 1250 W Peak

out

( No Degradation in Output Power

MRFE6VP61K25HR6 MRFE6VP61K25HSR6

2

RF Device Data

Freescale Semiconductor

V

BIAS

+

C10

C12C11 C13

RF

INPUT

COAX1

R1

Z11

Z3

Z5Z6Z7

Z1

Z2

C2

C4

C1

Z4

Z9

Z13

L1

C5

Z8

Z10

Z14

L2

C3

Z12

COAX2

V

BIAS

C6

+

C8C7 C9

R2

V

+

+

L3

C21

C22

C23

+

C24

SUPPLY

Z19

COAX3

Z15

Z17

Z21

Z23 Z25

C16

Z27

Z1 0.192) x 0.082) Microstrip
Z2 0.175) x 0.082) Microstrip
Z3, Z4 0.170) x 0.100) Microstrip
Z5, Z6 0.116) x 0.285) Microstrip
Z7, Z8 0.116) x 0.285) Microstrip
Z9, Z10 0.108) x 0.285) Microstrip

Figure 2. MRFE6VP61K25HR6(HSR6) Test Circuit Schematic — Pulsed

DUT

Z16

C14

Z22

C15

Z24

Z18

Z20

L4

+

C26

C25

Z11*, Z12* 0.872) x 0.058) Microstrip
Z13, Z14 0.412) x 0.726) Microstrip
Z15, Z16 0.371) x 0.507) Microstrip
Z17*, Z18* 0.466) x 0.363) Microstrip
Z19*, Z20* 1.187) x 0.154) Microstrip
Z21, Z22 0.104) x 0.507) Microstrip

C17

Z29

Z28Z26

C18

V

SUPPLY

COAX4

C19

+

C27

+

C28

Z23, Z24 1.251) x 0.300) Microstrip
Z25, Z26 0.127) x 0.300) Microstrip
Z27, Z28 0.116) x 0.300) Microstrip
Z29 0.186) x 0.082) Microstrip
Z30 0.179) x 0.082) Microstrip

* Line length includes microstrip bends

C20

Z30

RF

OUTPUT

RF Device Data
Freescale Semiconductor

MRFE6VP61K25HR6 MRFE6VP61K25HSR6

3

----

C1

C10 C11

COAX1

COAX2

C6

C7

C12

C8

C2

C3

R1

R2

C4

C13

C9

C22 C23 C24

C21

COAX3

L3

C16

L1

C5

L2

CUT OUT AREA

C14

MRFE6VP61K25H
Rev. 3

C15

L4

C25

C26 C27 C28

C17

C18

C19

COAX4

-- --

C20

Figure 3. MRFE6VP61K25HR6(HSR6) Test Circuit Component Layout — Pulsed

Table 5. MRFE6VP61K25HR6(HSR6) Test Circuit Component Designations and Values — Pulsed

Part Description Part Number Manufacturer

C1 20 pF Chip Capacitor ATC100B200JT500XT ATC

C2, C3, C5 27 pF Chip Capacitors ATC100B270JT500XT ATC

C4 0.8--8.0 pF Variable Capacitor, Gigatrim 27291SL Johanson

C6, C10 22 #F, 35 V Tantalum Capacitors T491X226K035AT Kemet

C7, C11 0.1 #F Chip Capacitors CDR33BX104AKYS AVX

C8, C12 220 nF Chip Capacitors C1812C224K5RACTU Kemet

C9, C13, C21, C25 1000 pF Chip Capacitors ATC100B102JT50XT ATC

C14 43 pF Chip Capacitor ATC100B430JT500XT ATC

C15 75 pF Metal Mica MIN02--002EC750J--F CDE

C16, C17, C18, C19 240 pF Chip Capacitors ATC100B241JT200XT ATC

C20 6.2 pF Chip Capacitor ATC100B6R2BT500XT ATC

C22, C23, C24, C26, C27, C28 470 #F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp

Coax1, 2, 3, 4 25 * Semi Rigid Coax, 2.2) Long UT--141C--25 Micro--Coax

L1, L2 5 nH Inductors A02TKLC Coilcraft

L3, L4 6.6 nH Inductors GA3093--ALC Coilcraft

R1, R2 10 * Chip Resistors CRCW120610R0JNEA Vishay

PCB 0.030), +r=2.55 AD255A Arlon

MRFE6VP61K25HR6 MRFE6VP61K25HSR6

4

RF Device Data

Freescale Semiconductor