SMD Schottky Barrier Diode
CDBG820-G THRU CDBG860-G (RoHS Device)
Reverse Voltage: 20 ~ 60 Volts
Forward Current: 8 A
Features:
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds enviromental standards of MIL-S-19500/228
Low leakage current
Mechanical Data:
Case: Molded plastic, G package (6.9mmx4.5mm)
Terminals: Solder plated, solderable per MIL-STD-750,
method 2026.
Polarity: Indicated by cathode band
Mounting position: Any
Approx. Weight: 0.00585 ounce, 0.195 gram
Maximum Ratings (at T
Parameter
= 25oC unless otherwise noted)
A
Symbol
0.152(3.8)
0.144(3.6)
0.032(0.8) Typ.
Dimensions in inches and (millimeters)
CDBG820-G CDBG830-G CDBG840-G
G package
0.283(7.2)
0.260(6.6)
0.244(6.2)
0.228(5.8)
CDBG850-G CDBG860-G
0.012(0.3) Typ.
0.189(4.8)
0.165(4.2)
0.098(2.5)
0.075(1.9)
0.040 (1.0) Typ.0.040(1.0) Typ.
Unit
Marking Code
Repetitive Peak Reverse Voltage
RMS voltage
Continuous reverse voltage
Maximum forward voltage
Max. Forward rectified current (See Fig.1)
Max. Forward surge current
8.3ms single half sine-wave superimposed
on rate load (JEDEC method)
Max. Reverse current
= V
V
R
= V
V
R
Thermal resistance
Junction Ambient
Diode junction capacitance
f=1MHz and applied 4vDC reverse Voltage
Max. Storage temperature
Operating temperature -55 to +125
RRM TA
RRM TA
= 25oC
= 100oC
V
V
I
T
RRM
RMS
V
V
I
FSM
I
R
C
STG
R
F
O
R
JA
j
SS82 SS83 SS84 SS85 SS86
20 30 40
14 21 28
20
30 40
0.55 0.70
8.0
150
1.0
50
55
700
+150
50 60
35 42
50 60
mA
o
C/ W
pF
o
o
V
V
V
V
A
A
C
C
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Page1
SMD Schottky Barrier Diode
RATING AND CHARACTERISTIC CURVES (CDBG820-G THRU CDBG860-G)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
12
10
8
6
4
2
AVERAGE FORWARD CURRENT,(A)
0
0 20 40 60 80 100 120 140 160 180 200
CASE TEMPERATURE,( C)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
250
200
150
8.3ms Single Half
Sine Wave
JEDEC method
100
50
PEAK FORWARD SURGE CURRENT,(A)PEAK FORWARD SURGE CURRENT,(A)
0
1105
Tj=25 C
NUMBER OF CYCLES AT 60Hz
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
50
10
1.0
Tj=25 C
Pulse Width 300us
0.1
INSTANTANEOUS FORWARD CURRENT,(A)
1% Duty Cycle
.01
.1 .3 .5 .7 .9 1.1 1.3 1.5
FORWARD VOLTAGE,(V)
FIG.5 - TYPICAL REVERSE
50
100
100
CHARACTERISTICS
FIG.4-TYPICAL JUNCTION CAPACITANCE
2800
2400
2000
1600
1200
800
JUNCTION CAPACITANCE,(pF)
400
0
.01 .05 .1 .5 1 5 10 50 100
REVERSE VOLTAGE,(V)
10
1.0
.1
REVERSE LEAKAGE CURRENT, (mA)
.01
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
Tj=75 C
Tj=25 C