Collmer Semiconductor YG912S2R Datasheet

YG912S2R

LOW LOSS SUPER HIGH SPEED DIODE

(200V / 10A TO-22OF15)

Outline Drawings

10.5±0.5

ø3.2

2.7±0.2

1.2±0.2

15±0.3

+0.2

-0.1

6.3

4.5±0.2

2.7±0.2

Features

Low VF
Super high speed switching.
High reliability by planer design.

Applications

High speed power switching.

Maximum Ratings and Characteristics

Absolute Maximum Ratings

Item

Repetitive peak reverse voltage

Repetitive peak surge reverse voltage

Isolation voltage

Average output current

Symbol

V

RRM

VRSM

Viso

IO

Terminals to Case,

AC. 1min.
duty=1/2, Tc=116°C
Rectangl wave

Connection Diagram

Conditions

3.7±0.2

JEDEC
EIAJ

1

5.08±0.4

13Min

0.7±0.2

Rating

200

200

1500

10

0.6±0.2

2.7±0.2

SC-67

3

Unit

V

V

V

A

Surge current

Operating junction temperature

Storage temperature

IFSM

Tj

Tstg

Sine wave 10ms

Electrical Characteristics (Ta=25°C Unless otherwise specified )

Item

Forward voltage drop

Reverse current

Reverse recovery time

Thermal resistance

Symbol

V

F

IR

trr

Rth(j-c)

Conditions

IF=10A

VR=VRRM

IF=0.1A,IR=0.2A,Irec=0.05A

Junction to case

Mechanical Characteristics

Mounting torque

Recommended torque

80

-40 to +150

-40 to +150

Max.

0.98

200

35

3.5

0.3 to 0.5

A

°C

°C

Unit

V

µA

ns

°C/W

N · m

Weight

2.3

g

(200V / 10A TO-22OF15)

)

Characteristics

YG912S2R

Forward Characteristic (typ.

100

10

1

0.1

IF Forward Current (A)

0.01

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VF Forward Voltage (V)

Forward Power Dissipation

14

12

10

8

6

4

2

0

WF Forward Power Dissipation (W)

Io

λ

360°

DC

o

o

o
o

Per 1element

Square wave λ=60

Square wave λ=120

Sine wave λ=180

Square wave λ=180

012345678910

Io Average Forward Current (A)

Tj=150

Tj=125
Tj=100
Tj=25

Reverse Characteristic (typ.)

4

10

3

10

A)

µ

o

C

o

C

o

C

o

C

2

10

1

10

0

10

Tj=150oC

Tj=125oC

Tj=100oC

Tj= 25oC

IR Reverse Current (

-1

10

0 50 100 150 200 250

VR Reverse Voltage (V)

Reverse Power Dissipation

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

PR Reverse Power Dissipation (W)

0.0
0 25 50 75 100 125 150 175 200 225

360°

VR

α

α

DC

=180

o

VR Reverse Voltage (V)

Current Derating (Io-Tc)

160
155
150
145

C)

o

140
135
130
125
120
115
110

λ

360°

Io

VR=200V

105
100

Tc Case Temperature (

0 2 4 6 8 10121416

DC

Square wave λ=180
Sine wave λ=180
Square wave λ=120

Square wave λ=60

Io Average Output Current (A)

:Conduction angle of forward current for each rectifier element

λ

Io:Output current of center-tap full wave connection

Junction Capacitance Characteristic
(typ.)

100

10

o

o

o

o

Cj Junction Capacitance (pF)

1

1 10 100

VR Reverse Voltage (V)

A-178