Collmer Semiconductor YG911S3R Datasheet

YG911S3R
LOW LOSS SUPER HIGH SPEED DIODE
(300V / 5A TO-22OF15)
Outline Drawings
10.5±0.5
ø3.2
2.7±0.2
1.2±0.2
15±0.3
+0.2
-0.1
6.3
4.5±0.2
2.7±0.2
Features
Applications
High speed power switching.
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Item
Repetitive peak reverse voltage
Repetitive peak surge reverse voltage
Isolation voltage
Average output current
Symbol
V
RRM
VRSM
Viso
IO
Terminals to Case,
AC. 1min. duty=1/2, Tc=128°C Rectangl wave
Connection Diagram
Conditions
3.7±0.2
JEDEC EIAJ
1
5.08±0.4
13Min
0.7±0.2
Rating
300
300
1500
5
0.6±0.2
2.7±0.2
SC-67
3
Unit
V
V
V
A
Surge current
Operating junction temperature
Storage temperature
IFSM
Tj
Tstg
Sine wave 10ms
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Item
Forward voltage Drop
Reverse current
Reverse recovery time
Thermal resistance
Symbol
V
F
IR
trr
Rth(j-c)
Conditions
IF=5.0A
VR=VRRM
IF=0.1A,IR=0.2A,Irec=0.05A
Junction to case
Mechanical Characteristics
Mounting torque
Recommended torque
40
-40 to +150
-40 to +150
Max.
1.2
100
35
3.5
0.3 to 0.5
A
°C
°C
Unit
V
µA
ns
°C/W
N · m
Weight
2.3
g
(300V / 5A TO-22OF15)
)
Characteristics
YG911S3R
Forward Characteristic (typ.)
100
10
1
IF Forward Current (A)
0.1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8
VF Forward Voltage (V)
Forward Power Dissipation
8.0
7.5
Io
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
WF Forward Power Dissipation (W)
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
λ
360°
Square wave λ=60
Square wave λ=120
Sine wave λ=180
Square wave λ=180
DC
o
o
o o
Per 1element
Io Average Forward Current (A)
Tj=150oC Tj=125oC Tj=100oC Tj=25oC
Reverse Characteristic (typ.)
4
10
3
10
A)
µ
2
10
1
10
0
10
IR Reverse Current (
-1
10
0 50 100 150 200 250 300 350
VR Reverse Voltage (V)
Reverse Power Dissipation
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
PR Reverse Power Dissipation (W)
0.0 0 50 100 150 200 250 300
360°
VR
α
VR Reverse Voltage (V)
Tj=150oC
Tj=125oC
Tj=100oC
Tj= 25oC
DC
α
=180
o
Current Derating (Io-Tc)
160
155
150
C)
o
145
140
135
130
125
120
115
Tc Case Temperature (
110
012345678
360°
λ
Io
VR=300V
Io Average Output Current (A)
λ
:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
DC
Sine wave λ=180 Square wave λ=180
Square wave λ=120
Square wave λ=60
Junction Capacitance Characteristic (typ.
100
10
o
o
o
o
1
Cj Junction Capacitance (pF)
0.1 1 10 100
VR Reverse Voltage (V)
A-172
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