Collmer Semiconductor YG901C2R Datasheet

YG901C2R

L L D (200V / 5A TO-22OF15)

LOW LOSS SUPER HIGH SPEED DIODE

Features

Low VF
Super high speed switching.
High reliability by planer design.

Applications

High speed power switching.

Maximum Ratings and Characteristics

Absolute Maximum Ratings

Item

Symbol

Conditions

Outline Drawings

10±0.5

3.7±0.2

JEDEC
EIAJ

ø3.2

2.7±0.2

1.2±0.2

0.7±0.2

2.54±0.2

15±0.3

13Min

+0.2

-0.1

6.3

SC-67

Connection Diagram

2

1

Rating

4.5±0.2

2.7±0.2

+0.2

0.6

-0

2.7±0.2

3

Unit

V

Repetitive peak reverse voltage

Repetitive peak surge reverse voltage

Isolation voltage

Average output current

Surge current

Operating junction temperature

Storage temperature

RRM

VRSM

Viso

IO

IFSM

Tj

Tstg

Terminals to Case,

AC. 1min.
duty=1/2, Tc=120°C
Square wave

Sine wave 10ms

Electrical Characteristics (Ta=25°C Unless otherwise specified )

Item

Forward voltage drop **

Reverse current **

Symbol

F

V

IR

Conditions

IF=2.5A

VR=VRRM

200

200

1500

5*

25

-40 to +150

-40 to +150

V

V

V

A

A

°C

°C

* Out put current of centertap full wave connection.

Max.

0.95

100

Unit

V

µA

Reverse recovery time

Thermal resistance

Mechanical Characteristics

Mounting torque

Weight

trr

Rth(j-c)

IF=0.1A,IR=0.2A,Irec=0.05A

Junction to case

Recommended torque

35

3.5

0.3 to 0.5

2.3

ns

°C/W

** Rating per element

N · m

g

LLD ( 200V / 5A TO-220F15)

Characteristics

YG901C2R (5A)

Forward Characteristic

100

10

1

0.1

I F Forward Current (A)

0.01

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

V F Forward Voltage (V)

Forward Power Dissipation

3.0

2.5

Square wave λ=60

2.0

Square wave λ=120
Sine wave λ=180

1.5

Square wave λ=180

1.0

0.5

o

o

o

o

DC

(typ.)

Io

Tj=150

Tj=125

Tj=100
Tj=25

λ

360°

Reverse Characteristic (typ.)

4

10

3

10

A)

µ

o

C

o

C

o

C

o

C

2

10

1

10

Tj=150 oC

Tj=125 oC

Tj=100 oC

Tj= 25 oC

0

10

I R Reverse Current (

-1

10

0 50 100 150 200 250

V R Reverse Voltage (V)

Reverse Power Dissipation

0.6

0.5

0.4

0.3

0.2

0.1

360°

VR

α

DC

=180

α

o

W F Forward Power Dissipation (W)

0.0

0.0 0.5 1.0 1.5 2.0 2.5

Per 1element

I o Average Forward Current (A)

Current Derating (Io-Tc)

160

C)

o

150

140

130

120

110

360°

100

T o Case Temperature (

λ

Io

VR=200V

90

01234567

I o Average Output Current (A)

λ

:Conduction angle of forward current for each rectifier element

Io:Output current of center-tap full wave connection

DC

Square wave λ=180

Sine wave λ=180
Square wave λ=120

Square wave λ=60

0.0

P R Reverse Power Dissipation (W)

0 25 50 75 100 125 150 175 200 225

V R Reverse Voltage (V)

Junction Capacitance Characteristic (typ.)

100

o

o

o

o

10

C j Junction Capacitance (p F)

1

1 10 100 1000

V R Reverse Voltage (V)

A-199