Collmer Semiconductor YG808C10R Datasheet
YG808C10R
SCHOTTKY BARRIER DIODE
(100V / 30A TO-22OF15)
Outline Drawings
10±0.5
ø3.2
2.7±0.2
1.2±0.2
15±0.3
+0.2
-0.1
6.3
4.5±0.2
2.7±0.2
Features
Low VF
Super high speed switching.
High reliability by planer design.
Applications
High speed power switching.
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Item
Repetitive peak reverse voltage
Repetitive peak surge reverse voltage
Isolation voltage
Average output current
Symbol
V
RRM
VRSM
Viso
IO
tw=500ns, duty=1/40
Terminals to Case,
AC. 1min.
duty=1/2, Tc=80°C
Square wave
Connection Diagram
Conditions
3.7±0.2
JEDEC
EIAJ
1
13Min
0.7±0.2
2.54±0.2
Rating
100
100
1500
30*
SC-67
2
+0.2
0.6
-0
2.7±0.2
3
Unit
V
V
V
A
Surge current
Operating junction temperature
Storage temperature
IFSM
Tj
Tstg
Sine wave 10ms
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Item
Forward voltage drop **
Reverse current **
Thermal resistance
Symbol
F
V
IR
Rth(j-c)
Conditions
IF=10A
VR=VRRM
Junction to case
Mechanical Characteristics
Mounting torque
Weight
Recommended torque
180
+150
-40 to +150
A
°C
°C
* Out put current of centertap full wave connection.
Max.
0.80
20.0
2.0
Unit
V
mA
°C/W
** Rating per element
0.3 to 0.5
2.3
N · m
g
(100V / 30A TO-22OF15)
Characteristics
YG808C10R
Forward Characteristic (typ.)
100
10
1
Tj=150oC
Tj=125oC
Tj=100oC
Tj=25oC
IF Forward Current (A)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF Forward Voltage (V)
Forward Power Dissipation
28
26
24
22
20
18
16
14
12
10
Io
λ
360°
Square wave λ=60
Square wave λ=120
Sine wave λ=180
Square wave λ=180
DC
o
o
o
o
8
6
4
2
WF Forward Power Dissipation (W)
0
0246810121416
Per 1element
Io Average Forward Current (A)
Reverse Characteristic (typ.)
3
10
2
10
1
10
0
10
-1
10
IR Reverse Current (mA)
-2
10
0 102030405060708090100110
VR Reverse Voltage (V)
Reverse Power Dissipation
50
45
40
35
30
25
20
15
10
5
PR Reverse Power Dissipation (W)
0
0 102030405060708090100110
360°
VR
α
VR Reverse Voltage (V)
Tj=150oC
Tj=125oC
Tj=100oC
Tj=25oC
DC
o
α
=180
Current Derating (Io-Tc)
160
150
140
130
120
C)
110
o
100
90
80
70
60
50
40
30
20
10
Tc Case Temperature (
0
0 5 10 15 20 25 30 35 40 45
360°
λ
Io
VR=50V
DC
Sine wave λ=180
Square wave λ=180
Square wave λ=120
Square wave λ=60
Io Average Output Current (A)
:Conduction angle of forward current for each rectifier element
λ
Io:Output current of center-tap full wave connection
Junction Capacitance Characteristic
(typ.)
1000
o
o
o
o
100
Cj Junction Capacitance (pF)
10
1 10 100 1000
VR Reverse Voltage (V)
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