Collmer Semiconductor YG805C04R Datasheet

YG805C04R

SCHOTTKY BARRIER DIODE

Features

Low VF
Super high speed switching.
High reliability by planer design.

Applications

High speed power switching.

(40V / 20A TO-22OF15)

Outline Drawings

10±0.5

3.7±0.2

ø3.2

2.7±0.2

1.2±0.2

0.7±0.2

2.54±0.2

15±0.3

13Min

+0.2

-0.1

6.3

JEDEC
EIAJ

SC-67

Connection Diagram

2

4.5±0.2

2.7±0.2

+0.2

0.6

-0

2.7±0.2

Maximum Ratings and Characteristics

Absolute Maximum Ratings

Item

Repetitive peak reverse voltage

Repetitive peak surge reverse voltage

Isolation voltage

Average output current

Surge current

Operating junction temperature

Storage temperature

Symbol

V

RRM

VRSM

Viso

IO

IFSM

Tj

Tstg

Electrical Characteristics (Ta=25°C Unless otherwise specified )

Conditions

tw=500ns, duty=1/40

Terminals to Case,

AC. 1min.
duty=1/2, Tc=100°C
Square wave

Sine wave 10ms

1

Rating

40

48

1500

20*

120

-40 to +150

-40 to +150

Unit

V

V

V

A

A

°C

°C

* Out put current of centertap full wave connection.

3

Item

Forward voltage drop **

Reverse current **

Thermal resistance

Mechanical Characteristics

Mounting torque

Weight

Symbol

VF

IR

Rth(j-c)

Conditions

IF=10A

VR=VRRM

Junction to case

Recommended torque

Max.

0.6

15

2.5

0.3 to 0.5

2.3

Unit

V

mA

°C/W

** Rating per element

N · m

g

(40V / 20A TO-22OF15)

Characteristics

YG805C04R

Forward Characteristic (typ.)

100

10

o

C

Tj=150

o

C

1

0.1

Tj=125
Tj=100

Tj=25

o

C

o

C

IF Forward Current (A)

0.01

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VF Forward Voltage (V)

Forward Power Dissipation

14

12

10

8

6

Io

λ

360°

Square wave λ=60

Square wave λ=120

Sine wave λ=180

Square wave λ=180

o

o

o

o

DC

4

2

WF Forward Power Dissipation (W)

0

0246810

Per 1element

Io Average Forward Current (A)

Reverse Characteristic (typ.)

2

10

1

10

0

10

-1

10

-2

10

IR Reverse Current (mA)

-3

10

0 1020304050

VR Reverse Voltage (V)

Tj=150oC

Tj=125oC

Tj=100oC

Tj= 25oC

Reverse Power Dissipation

α

DC

=180

20

15

10

5

PR Reverse Power Dissipation (W)

0

0 5 10 15 20 25 30 35 40 45

360°

VR

α

VR Reverse Voltage (V)

o

Current Derating (Io-Tc)

160
150
140
130
120

C)

o

110
100

90
80

DC

Sine wave λ=180
Square wave λ=180

Square wave λ=120

70
60
50
40
30

Tc Case Temperature (

20

0 5 10 15 20 25 30

λ

360°

Io

VR=30V

Square wave λ=60

Io Average Output Current (A)

λ

:Conduction angle of forward current for each rectifier element

Io:Output current of center-tap full wave connection

Junction Capacitance Characteristic
(typ.)

10000

o

o

o

o

1000

Cj Junction Capacitance (pF)

100

1 10 100

VR Reverse Voltage (V)