Collmer Semiconductor YG802C04R Datasheet

YG802C04R

(40V / 10A TO-22OF15)

SCHOTTKY BARRIER DIODE

Features

Low VF
Super high speed switching.
High reliability by planer design.

Applications

High speed power switching.

Maximum Ratings and Characteristics

Absolute Maximum Ratings

Outline Drawings

10±0.5

3.7±0.2

JEDEC
EIAJ

ø3.2

2.7±0.2

1.2±0.2

0.7±0.2

2.54±0.2

15±0.3

13Min

+0.2

-0.1

6.3

SC-67

Connection Diagram

2

1

4.5±0.2

2.7±0.2

+0.2

0.6

2.7±0.2

3

-0

Item

Repetitive peak reverse voltage

Repetitive peak surge reverse voltage

Isolation voltage

Average output current

Surge current

Operating junction temperature

Storage temperature

Symbol

V

RRM

VRSM

Viso

IO

IFSM

Tj

Tstg

Conditions

tw=500ns, duty=1/40

Terminals to Case,

AC. 1min.
duty=1/2, Tc=95°C
Square wave

Sine wave 10ms

Electrical Characteristics (Ta=25°C Unless otherwise specified )

Item

Forward voltage drop **

Symbol

F

V

Conditions

IF=4.0A

Rating

40

48

1500

10*

120

-40 to +150

-40 to +150

Unit

V

V

V

A

A

°C

°C

* Out put current of centertap full wave connection.

Max.

0.55

Unit

V

Reverse current **

Thermal resistance

Mechanical Characteristics

Mounting torque

Weight

IR

Rth(j-c)

VR=VRRM

Junction to case

Recommended torque

5.0

3.5

0.3 to 0.5

2.3

mA

°C/W

** Rating per element

N · m

g

(40V / 10A TO-22OF15)

Characteristics

YG802C04R

Forward Characteristic (typ.)

100

10

Tj=150oC
Tj=125oC

Tj=100oC
Tj=25oC

1

IF Forward Current (A)

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

VF Forward Voltage (V)

Forward Power Dissipation

7.0

6.5

6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

WF Forward Power Dissipation (W)

0.0

Io

λ

360°

DC

o

o
o
o

Per 1element

Square wave λ=60

Square wave λ=120

Sine wave λ=180

Square wave λ=180

012345

Io Average Forward Current (A)

Reverse Characteristic (typ.)

2

10

1

10

0

10

-1

10

-2

10

IR Reverse Current (mA)

-3

10

0 1020304050

Tj=150oC

Tj=125oC

Tj=100oC

Tj=25oC

VR Reverse Voltage (V)

Reverse Power Dissipation

12

10

8

6

4

2

PR Reverse Power Dissipation (W)

0

0 5 10 15 20 25 30 35 40 45 50

360°

VR

α

VR Reverse Voltage (V)

α

DC

=180

o

Current Derating (Io-Tc)

160
150
140
130

C)

o

120
110
100

90
80
70
60

Tc Case Temperature (

50

360°

λ

Io

VR=30V

0246810121416

Io Average Output Current (A)

:Conduction angle of forward current for each rectifier element

λ

Io:Output current of center-tap full wave connection

DC

Sine wave λ=180
Square wave λ=180

Square wave λ=120

Square wave λ=60

Junction Capacitance Characteristic
(typ.)

o

o

o

o

1000

Cj Junction Capacitance (pF)

100

1 10 100

VR Reverse Voltage (V)